MGF0916A Search Results

MGF0916A

Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

M 14606 SMD

Abstract: A 3120 v 0816
Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION T he M G F 0 9 1 6 A G aA s F E T w ith an N -ch an nel sch to kky G ate, is d e sig n e d fo r use U H F band am plifiers. FEATURES • High ou tput po w e r

FET K 1358

Abstract: 9452 smd MGF0916A fet smd 2657 FET
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

ADD30

Contextual Info: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power

FET K 1358

Abstract: MGF0916A gp 752 9452 smd
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm

MGF0916A

Abstract: 094-3 MAG
Contextual Info: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm TYP. @ f=1.9GHz,Pin=5dBm

9452 smd

Contextual Info: < High-power GaAs FET small signal gain stage > MGF0916A L & S BAND / 0.2W SMD non - matched DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm

ta 9690

Abstract: MGF0916A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm

uhf 1kw amplifier

Abstract: MGF0916A
Contextual Info: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES

C42V5964

Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
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