FX30A Search Results

FX30ASJ-03

Abstract: PRSS0004ZA-A KA DIODE
Contextual Info: FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0200 Previous: MEJ02G0266-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –30 V rDS(ON) (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns

Contextual Info: FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0300 Rev.3.00 Dec 19, 2008 Features • • • • • Drive voltage : 4 V VDSS : –30 V rDS ON (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns Outline RENESAS Package code: PRSS0004ZG-A

FX30A-4P-3

Abstract: Cl057 Ericsson+rbs+2964+manual
Contextual Info: 10 A Compatible, Position Misalignment Absorption Type Power Supply Connector for PCB Connections FX30A Series Example of Connector Mounted Next to Another Connector FX18 Series without position misalignment absorption function •Features FX30A Series (with position

FX30ASJ-03

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30ASJ-03 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30ASJ-03 OUTLINE DRAWING 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 Dimensions in mm

Contextual Info: FX30ASJ-03 High-Speed Switching Use Pch Power MOS FET REJ03G1445-0200 Previous: MEJ02G0266-0101 Rev.2.00 Aug 07, 2006 Features • • • • • Drive voltage : 4 V VDSS : –30 V rDS(ON) (max) : 61 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 50 ns

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30ASJ-03 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30ASJ-03 OUTLINE DRAWING Dim ensions in mm 6.5 5.0 ± 0.2 1.0 l] 0.9 max 0 .5 ± 0 .2 0.8 T~ Í i \ /B ? © © ñl 9 o- • 4 V D R IV E •V dss © ©G ATE © DRAIN ©SOURCE

FX30ASJ-03

Abstract: PRSS0004ZG-A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

FX30ASJ-03

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

rjh3047

Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Contextual Info: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing

FX6VSJ-03

Abstract: fx6vsj-06 TO-220FN FX6VSJ06 FX30UMJ03 FX30KMJ-06 fx50smj
Contextual Info: < W E R E X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S t l O f t F O T IT Ì D â t S Selector Guide Discrete MOSFET - Low Voltage Trench Gate 4.0V Driver Voltage p-channel MOSFETs Maximum Ratings, Tc = 25°C Device

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: < W E R E X SflOrt FOTiTÌ Dâtâ Powerex, Inc., 200 HHIis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Selector Guide Discrete MOSFET Low Voltage Trench Gate - 2.5V Driver Voltage p-channel MOSFETs M axim um R atings, T c = 25°C Device VDSS