FSS430D3 Search Results

2E12

Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Contextual Info: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

2E12

Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Contextual Info: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: H A R R IS X FSS430D, FSS430R S em iconductor 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, ros ON = 2.70£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

NI-26

Abstract: Rad Hard in Fairchild for MOSFET 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
Contextual Info: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: W A R D 'S FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 3A, 500V, Fd S ON = 2.70S1 The Discrete Products O peration of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs