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Micron Technology Inc MT53E128M32D2DS-053-AAT:A IC DRAM 4GBIT 1.866GHZ 200WFBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MT53E128M32D2DS-053-AAT:A	Tray	1,938		1	1 $11.26 10 $10.426 100 $8.9215 1000 $8.39389 10000 $8.39389	Buy Now
Ferroxcube International Holding BV TX13-7.1-4.8-3E12 FERRITE CORE TOROID
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TX13-7.1-4.8-3E12	Bulk	673		1	1 $1.32 10 $0.913 100 $0.6133 1000 $0.44728 10000 $0.432	Buy Now
Texas Instruments TPS3103E12DBVT IC SUPERVISOR 1 CHANNEL SOT23-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TPS3103E12DBVT	Digi-Reel	344		1	1 $3.08 10 $2.31 100 $1.9036 1000 $1.9036 10000 $1.9036	Buy Now
	TPS3103E12DBVT	Cut Tape	344		1	1 $3.08 10 $2.31 100 $1.9036 1000 $1.9036 10000 $1.9036	Buy Now
	TPS3103E12DBVT	Reel	250		250	1 - 10 - 100 - 1000 $1.80216 10000 $1.59649	Buy Now
Bristol Electronics	TPS3103E12DBVT		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	TPS3103E12DBVT		100			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	TPS3103E12DBVT		21		3	1 - 10 $2.464 100 $1.6016 1000 $1.6016 10000 $1.6016	Buy Now
Rochester Electronics	TPS3103E12DBVT		1,880		1	1 $1.6 10 $1.6 100 $1.5 1000 $1.36 10000 $1.36	Buy Now
TME	TPS3103E12DBVT				1	1 $2.48 10 $1.97 100 $1.65 1000 $1.65 10000 $1.65	Get Quote
Win Source Electronics	TPS3103E12DBVT		31,100			1 - 10 - 100 $0.848 1000 $0.566 10000 $0.566	Buy Now
Ferroxcube International Holding BV TX26-15-10-3E12 FERRITE CORE TOROID
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TX26-15-10-3E12	Bulk	328		1	1 $2.83 10 $1.947 100 $1.2828 1000 $1.04824 10000 $1.04824	Buy Now
SiTime Corporation SIT9102AI-232H33E125.00000X MEMS OSC XO 125.0000MHZ LVDS SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT9102AI-232H33E125.00000X	Digi-Reel	78		1	1 $34.01 10 $29.409 100 $25.4603 1000 $25.4603 10000 $25.4603	Buy Now
	SIT9102AI-232H33E125.00000X	Cut Tape	78		1	1 $34.01 10 $29.409 100 $25.4603 1000 $25.4603 10000 $25.4603	Buy Now
Avnet Silica	SIT9102AI-232H33E125.00000X			26 Weeks	250	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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3E12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
3E12		Unknown	Shortform Semicon, Diode, and SCR Datasheets		Short Form	PDF

3E12 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: 3U CompactPCI Peripheral Cards / PMC Modules cPCI-3E10/3E12 cPCI-3544 3U CompactPCI 2/4-Port Gigabit Ethernet Card 4-Port RS-422/485 Isolated Serial Communications Card ® 3U cPCI Blades PICMG 2.0 R3.0 compliant Supports 32bit/33MHz, 66bit/64MHz CompactPCI® bus	Original	PDF	cPCI-3E10/3E12 cPCI-3544 RS-422/485 32bit/33MHz, 66bit/64MHz 100mmx160mm RJ-45 10/100/1000BASE-T 82574L cPCI-3E10
Untitled Abstract: No abstract text available Text: 3E10 3E10: 3E12 3E12: A high permeability material optimized for use in wideband transformers as well as EMI-suppression filters The best The highest process impedance control with and extended permeability bandwidth 3E10 achieves the tightest tolerance in your final product only 20% , so	Original	PDF
Untitled Abstract: No abstract text available Text: BRIGHT LED ELECTRONICS CORP. SINCE 1981 BA-3E12UW Package Dimensions : Features : 1. Emitting area : 18.78x5.85 mm 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. 19.80 .780	Original	PDF	BA-3E12UW BA-3E12UW
BA-3E12UW Abstract: No abstract text available Text: BRIGHT LED ELECTRONICS CORP. BA-3E12UW SINCE 1981 ● Features : 1. Emitting area : 18.78x5.85（mm） 2. Low power requirement. 3. Excellent characters appearance. 4. Solid state reliability. 5. Categorized for luminous intensity. ● Package Dimensions :	Original	PDF	BA-3E12UW BA-3E12UW
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS BF 7e-16 MJC 0.34 109 XCJC NF 1 CJS VAF 15 VJS 0.75 IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 0.01 VAR 12.4 ITF IKR Infinity PTF	Original	PDF	UPA826TC 7e-16 9e-13 4e-12 18e-12 3e-12
ARM926T Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608 Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370	Original	PDF	MC9328MX21RM CH370 ARM926T ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
ad8561 precautions Abstract: AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16 Text: a Dual 7 ns Single Supply Comparator AD8598 FEATURES 7 ns Propagation Delay Single Supply Operation: +3 V to +10 V Low Power Symmetrical Layout Latch Function TSSOP Packages PIN CONFIGURATIONS N-16, RU-16 and R-16A OBS APPLICATIONS Clock Recovery and Clock Distribution	Original	PDF	AD8598 RU-16 R-16A MAX912 16-Lead R-16A) ad8561 precautions AD8561 AD8598 AD8598AN AD8598AR AD8598ARU AD9698 MAX912 N-16
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA	Original	PDF	NE722S01 001pF 2e-10 1e-14 3e-12 19e-12 92e-12 05e-12 150e-6 second2/2002
Untitled Abstract: No abstract text available Text: NONLINEAR MODEL BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 & Q2 Parameters Q1 & Q2 IS 7e-16 MJC 0.34 BF 109 XCJC NF 1 CJS 0.75 VAF 15 VJS IKF 0.19 MJS ISE 7.9e-13 FC 0.5 3e-12 NE 2.19 TF BR 1 XTF 5.2 NR 1.08 VTF 4.58 VAR 12.4 ITF 0.01 IKR Infinity PTF	Original	PDF	UPA806T 7e-16 9e-13 4e-12 18e-12 3e-12 24-Hour
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	PDF	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
E137938 Abstract: 3E50 1E35 1E125UM Text: Standard Pack: 12 Weight: 0.3A - 32A 1.8kg 3.97 lb. 40A - 63A 1.98kg (4.37 lb.) Two Pole Standard Pack: 6 Weight: 0.3A - 32A 1.8kg (3.97 lb.) 40A - 63A 1.98kg (4.37 lb.) Rated Current 0.3A 0.5A 0.75A 0.8A 1.0A 1.6A 2.0A 2.5A 3.0A 3.5A 4.0A 5.0A 6.0A 8.0A	Original	PDF	E137938 UL508 1E03UM 1E05UM 1E075UM 1E10UM 1E12UM 1E125UM 1E13UM 1E15UM E137938 3E50 1E35
INA115E Abstract: 115E 20E6 INA115 Text: * INA115E = 2 x A1_115E + A3_115E OP AMPS + PRECISION RESISTOR NETWORK * CREATED ON 1/10/94 BY JLA * REV.A * NODE ASSIGNMENTS OF SUBCKT INA115 CORRESPOND TO SURFACE MOUNT PACKAGE OF * BURR-BROWN'S INA115 NO DIP AVAILABLE * * -* \| NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;	Original	PDF	INA115E INA115 INA115 947E3 111E6 123E3 10E-12 5E-12 INA115E 115E 20E6
pwm 20khz duty welding Abstract: CS01 PPL-21 Text: L-Series High Reliability Radiation Tolerant DC/DC Converters DESCRIPTION FEATURES The L-Series of DC/DC converters are radiation tolerant, high reliability devices designed for moderate radiation environments such as those encountered by low earth orbit satellites and launch vehicles. For higher radiation	Original	PDF	MIL-STD-975, MILSTD-1547 PPL-21 M3L2815D M3L2805S pwm 20khz duty welding CS01
neutron detector Abstract: ART2800T AWG21 bergquist ge Text: PD - 94530A ARM28XXT SERIES 28V Input, Three Output ADVANCED ANALOG HYBRID - HIGH RELIABILITY 1 MEGA-RAD HARDENED DC/DC CONVERTER Description The ARM Series of three output DC/DC converters are designed specifically for use in the high-dose radiation environments encountered during deep space planetary missions. The extremely high level of radiation	Original	PDF	4530A ARM28XXT neutron detector ART2800T AWG21 bergquist ge

AD8561S Abstract: AD8561 ad8561 precautions transistor C3220 LT1016 AD8561AN AD8561AR AD8561ARU c3220 Text: a FEATURES 7 ns Propagation Delay at 5 V Single Supply Operation: 3 V to 10 V Low Power Latch Function TSSOP Packages APPLICATIONS High Speed Timing Clock Recovery and Clock Distribution Line Receivers Digital Communications Phase Detectors High Speed Sampling	Original	PDF	LT1016 AD8561 AD8561 AD8561S ad8561 precautions transistor C3220 AD8561AN AD8561AR AD8561ARU c3220
2E12 Abstract: 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3 Text: FSS430D, FSS430R 3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 3A, 500V, rDS ON = 2.70Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	FSS430D, FSS430R 2E12 3E12 FSS430D FSS430D1 FSS430D3 FSS430R FSS430R1 FSS430R3
2E12 Abstract: 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1 Text: FSYA450D, FSYA450R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.	Original	PDF	FSYA450D, FSYA450R 2E12 3E12 FSYA450D FSYA450D1 FSYA450D3 FSYA450R FSYA450R1
5A12-7iR Abstract: 5A10-7iR 368-7IR 246-7iR S09023 128-7iR 1287I 5A11-2 366-7iR Text: PSC Series 6.12 A Switching Regulators Input voltage up to 144 V DC Single output of 3.3.36 V DC No input to output isolation • Efficiency up to 96% • Low input-output differential voltage • No derating over temperature Selection chart Output Uo nom Io nom	Original	PDF	S09023 5A12-7iR 5A10-7iR 368-7IR 246-7iR S09023 128-7iR 1287I 5A11-2 366-7iR
op482arc/883 Abstract: OP482 smd 43e OP282 OP282G OP282GP OP282GS OP-482 OP482GP OP482GS Text: a Dual/Quad Low Power, High Speed JFET Operational Amplifiers OP282/OP482 FEATURES High Slew Rate: 9 V/␮s Wide Bandwidth: 4 MHz Low Supply Current: 250 ␮A/Amplifier Low Offset Voltage: 3 mV Low Bias Current: 100 pA Fast Settling Time Common-Mode Range Includes V+	Original	PDF	OP282/OP482 OP282/OP482 C00301 20-Position op482arc/883 OP482 smd 43e OP282 OP282G OP282GP OP282GS OP-482 OP482GP OP482GS
TC124E Abstract: No abstract text available Text: FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low	Original	PDF	FDB8874 O-263AB TC124E
Untitled Abstract: No abstract text available Text: FDP8880 / FDB8880 N-Channel PowerTrench MOSFET 30V, 54A, 11.6mΩ Features General Description r DS ON = 14.5mΩ, VGS = 4.5V, ID = 40A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM	Original	PDF	FDP8880 FDB8880 FDB8880 O-263AB O-220AB
2E12 Abstract: 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET Text: FRL430D, FRL430R, FRL430H 2A, 500V, 2.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 2A, 500V, RDS on = 2.50Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current	Original	PDF	FRL430D, FRL430R, FRL430H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 3E12 FRL430D FRL430H FRL430R Rad Hard in Fairchild for MOSFET
imperial m015 Abstract: BF253 Text: ANALOG ► DEVICES Dual/Quad Single Supply Operational Amplifier 0P292/0P492 FEATURES Single Supply Operation: 4.5 V to 33 V Input Common Mode Includes Ground Output Swings to Ground High Slew Rate: 3 V / jjls High Gain Bandwidth: 4 MHz Low Input Offset Voltage	OCR Scan	PDF	0P292/0P492 14-Lead OP292/OP492 SO-14 imperial m015 BF253
02e3 Abstract: SSM2135 Text: Dual Single-Supply Audio Operational Amplifier ANALOG DEVICES SSM2135 FEATURES Excellent Sonic Characteristics High O utput Drive Capability 5.2 nV/VHz Equivalent Input Noise @ 1 kHz 0.001% THD+N V0 = 2.5 V p-p @ 1 kHz 3.5 M Hz Gain Bandwidth U nity-G ain Stable	OCR Scan	PDF	SSM2135 SSM2135 11E-13 48E-6WD= 53E16UO 10VMAX 75E-6 01TPG 02e3

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3E12 Search Results

3E12 Price and Stock

Micron Technology Inc MT53E128M32D2DS-053-AAT:A

Ferroxcube International Holding BV TX13-7.1-4.8-3E12

Texas Instruments TPS3103E12DBVT

Ferroxcube International Holding BV TX26-15-10-3E12

SiTime Corporation SIT9102AI-232H33E125.00000X

3E12 Datasheets (1)

3E12 Datasheets Context Search

Untitled

Untitled

Untitled

BA-3E12UW

Untitled

ARM926T

ad8561 precautions

Untitled

Untitled

IRF460

E137938

INA115E

pwm 20khz duty welding

neutron detector

AD8561S

2E12

2E12

5A12-7iR

op482arc/883

TC124E

Untitled

2E12

imperial m015

02e3