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    FQU1N60 Price and Stock

    onsemi FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 5,040
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    Rochester Electronics LLC FQU1N60TU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60TU Tube 607
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    onsemi FQU1N60CTU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60CTU Tube
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    Avnet Americas FQU1N60CTU Tube 0 Weeks, 2 Days 2,500
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    Verical FQU1N60CTU 16,110 1,439
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    FQU1N60CTU 3,914 1,439
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    Rochester Electronics FQU1N60CTU 20,024 1
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    TME FQU1N60CTU 1
    • 1 $0.791
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    Flip Electronics FQU1N60CTU 44,264
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    New Advantage Corporation FQU1N60CTU 3,570 1
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    Flip Electronics FQU1N60CTU

    MOSFET N-CH 600V 1A IPAK
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    DigiKey FQU1N60CTU Tube 2,000
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    Aptina Imaging FQU1N60CTU

    Trans MOSFET N-CH 600V 1A 3-Pin(3+Tab) IPAK Tube
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    Verical FQU1N60CTU 5,040 24
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    Find more FQU1N60 price and stock on Findchips.com

    FQU1N60 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU1N60 Fairchild Semiconductor 600 V N-Channel MOSFET Original PDF
    FQU1N60C Fairchild Semiconductor Original PDF
    FQU1N60CTU Fairchild Semiconductor 600V N-Channel Advance QFET C-Series Original PDF
    FQU1N60TU Fairchild Semiconductor 600V N-Channel QFET Original PDF

    FQU1N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FQD1N60CTM

    Abstract: No abstract text available
    Text: FQD1N60C / FQU1N60C N-Channel QFET MOSFET 600 V, 1.0 A, 11.5 Ω Features Description • 1 A, 600 V, RDS on = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD1N60C FQU1N60C FQD1N60CTM

    FQU1N60

    Abstract: FQD1N60
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 FQU1N60

    FQD1N60C

    Abstract: FQU1N60C
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C FQU1N60C

    Untitled

    Abstract: No abstract text available
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 FQU1N60TU O-251 FQU1N60

    Untitled

    Abstract: No abstract text available
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 FQD1N60TM O-252 FQD1N60TF

    Untitled

    Abstract: No abstract text available
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C

    1N60C

    Abstract: FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60 FQD1N60CTM
    Text: FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C O-252 FQD1N60CTF FQD1N60CTM 1N60C FAIRCHILD FQD DPAK DPAK-2 PACKAGE PSPICE Orcad 1n60

    FQD1N60C

    Abstract: FQU1N60C
    Text: FQD1N60C / FQU1N60C N-Channel QFET MOSFET 600 V, 1.0 A, 11.5 Ω Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C FQU1N60C

    Untitled

    Abstract: No abstract text available
    Text: QFET N-CHANNEL FQD1N60, FQU1N60 FEATURES BVDSS = 600V • Advanced New Design • Avalanche Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 5.0nC Typ.


    Original     		PDF FQD1N60, FQU1N60 FQD1N60

    Untitled

    Abstract: No abstract text available
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C

    10A600VRDS

    Abstract: No abstract text available
    Text: FQD1N60 / FQU1N60 April 2000 QFET TM FQD1N60 / FQU1N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60 FQU1N60 10A600VRDS

    FQU1N60C

    Abstract: No abstract text available
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C FQU1N60C

    fqu1N60C

    Abstract: FQD1N60C
    Text: QFET FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD1N60C FQU1N60C fqu1N60C

    FDC6331

    Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
    Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3


    Original     		PDF 2N7002 2N7002MTF BS170 BSS123 BSS138 BSS84 FDB045AN08A0 FDB2532 FDB3632 FDB3652 FDC6331 fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


    Original     		PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


    Original     		PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    Untitled

    Abstract: No abstract text available
    Text: FAN102 Primary-Side-Control PWM Controller Features Description ̇ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ̇ ̇ Green Mode: Frequency Reduction at Light Load ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ ̇ Cable Voltage Drop Compensation in CV Mode


    Original     		PDF FAN102 FAN102 42kHz

    IRFU210A

    Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
    Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031


    Original     		PDF O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

    pin configuration diode 1N4007

    Abstract: CHARACTERISTICS DIODE 1N4007 EE16 10 pin bobbin transformers FAN102 flyback cell phone ac charger 1N4007 marking CD 2.3mh PWM controller sop-8 transformer from 230V AC to 5V DC A114
    Text: FAN102 Primary-Side-Control PWM Controller Features Description ƒ Constant-Voltage CV and Constant-Current (CC) Control without Secondary-Feedback Circuitry ƒ ƒ Green Mode: Frequency Reduction at Light Load ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Cable Voltage Drop Compensation in CV Mode


    Original     		PDF FAN102 42kHz FAN102 pin configuration diode 1N4007 CHARACTERISTICS DIODE 1N4007 EE16 10 pin bobbin transformers flyback cell phone ac charger 1N4007 marking CD 2.3mh PWM controller sop-8 transformer from 230V AC to 5V DC A114

    230V ac to 5V dc mobile charger circuit

    Abstract: 230v ac to dc mobile charger circuit d 1n4007 NC-2H Nicera E156256 FERRITE core nicera NC-2H chang capacitor 10uF 50v 120v ac to dc mobile charger circuit 468-2FC E206440
    Text: Evaluation Board of 3.5W For Charger FEB220-001 Primary-side-control PWM Controller FAN102 5V/700mA Mobile phone battery charger with PSR Contents 1. General Introduction & Spec.P2 2. Functional Test Report….…………….…P3


    Original     		PDF FEB220-001 FAN102 V/700mA DR475C E154709 E79029 E85640 TRN-0235 I0060 230V ac to 5V dc mobile charger circuit 230v ac to dc mobile charger circuit d 1n4007 NC-2H Nicera E156256 FERRITE core nicera NC-2H chang capacitor 10uF 50v 120v ac to dc mobile charger circuit 468-2FC E206440

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    FSD210 8-pin

    Abstract: dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET
    Text: FSA4157/FSA1156/FSA1157 Industry’s Smallest Low Ohm Switches The FSA4157, FSA1156 and FSA1157 are 1 ohm single pole/double throw analog switches in MicroPakTM packaging that provides an 84% space savings over traditional SOT-23 packaging. These devices feature low On resistance RON


    Original     		PDF FSA4157/FSA1156/FSA1157 FSA4157, FSA1156 FSA1157 OT-23 FSA1156 FSA1157 FSA4157/FSA1156/FSA1157 FIN1215/FIN1216/FIN1217/FIN1218 FSD210 8-pin dvd players smps circuit diagram mosfet base inverter with chargers circuit fsd311 5pin Fairchild Power Switch ic 500 watt smps circuit diagram 600 watt smps schematic P-Channel MOSFET 600v 400 watt audio amplifier MOSFET schematic circuit 400 watt audio amplifier MOSFET