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Bansbach Easylift FPD-1012A5-CW SHOCK ABSORBER - FIXED
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DigiKey	FPD-1012A5-CW	Bag			1	1 $7.69 10 $7.69 100 $7.69 1000 $7.69 10000 $7.69	Buy Now
Bansbach Easylift FPD-1030B1-CW SHOCK ABSORBER - FIXED
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Bansbach Easylift FPD-1012A1-DW SHOCK ABSORBER - FIXED
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DigiKey	FPD-1012A1-DW	Bag			1	1 $7.8 10 $7.8 100 $7.8 1000 $7.8 10000 $7.8	Buy Now
Bansbach Easylift FPD-1060A3-SW SHOCK ABSORBER - FIXED
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DigiKey	FPD-1060A3-SW	Bag			1	1 $13.93 10 $13.93 100 $13.93 1000 $13.93 10000 $13.93	Buy Now
Bansbach Easylift FPD-1030A3-SW SHOCK ABSORBER - FIXED
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DigiKey	FPD-1030A3-SW	Bag			1	1 $13.01 10 $13.01 100 $13.01 1000 $13.01 10000 $13.01	Buy Now

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FPD10 Datasheets (9)

Part	Manufacturer	Description	Datasheet Type	PDF
FPD10000AF	Filtronic	10w Packaged Power pHEMT	Original	PDF
FPD10000V	Filtronic	10w Power pHEMT For Wimax Power Amplifiers	Original	PDF
FPD1000AS	Filtronic	1w Packaged Power pHEMT	Original	PDF
FPD1000AS-EB	Filtronic	1W PACKAGED POWER PHEMT	Original	PDF
FPD1000V	Filtronic	1w Power pHEMT	Original	PDF
FPD1050	Filtronic	0.75w Power pHEMT	Original	PDF
FPD1050SOT89	Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT	Original	PDF
FPD1050SOT89	Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT	Original	PDF
FPD1050SOT89E	Filtronic	LOW NOISE HIGH LINEARITY PACKAGED PHEMT	Original	PDF

FPD10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Rogers-4003 Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS	Original	PDF	EB1050SOT89-AG FPD1050SOT89 25dBm 36dBm 12dBm FPD1050SOT89; 1050m 30mil LL1608 Rogers-4003 CAPACITOR 33PF rogers 4003 26GHz LNA
transistor marking code 1325 Abstract: R04003 ims pcb filtronic Solid State Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State
transistor SMD P1f Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
transistor SMD P2F Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State
FPD1050SOT89 Abstract: 20 ohm Text: EB1050SOT89BA FPD1050SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 1.85GHz 24.5dBm Output Power 17.5dB Gain 0.65dB Noise Figure 36dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS	Original	PDF	EB1050SOT89BA FPD1050SOT89 85GHz 85GHz 36dBm 10dBm 85GHz. FPD1050SOT89; 1050m 30mil 20 ohm
eb105 Abstract: FPD1050SOT89 VG sma Text: EB1050SOT89BB FPD1050SOT89 0.9GHz LNA EVALUATION BOARD FEATURES • • ¥ ¥ ¥ Measured @ 900MHz 23.0dBm Output Power 22dB Gain 0.6dB Noise Figure 33.5dBm OIP3 measured at 10dBm per tone Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS	Original	PDF	EB1050SOT89BB FPD1050SOT89 900MHz 10dBm FPD1050SOT89; 1050m 30mil LL1608 eb105 VG sma
Untitled Abstract: No abstract text available Text: FPD1050 Datasheet v2.2 0.75W POWER PHEMT FEATURES: • • • • • LAYOUT: 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050	Original	PDF	FPD1050 FPD1050 22A114. MIL-STD-1686 MIL-HDBK-263.
SMD Transistor p1f Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263 Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263
TRANSISTOR A114 E Abstract: FPD1050SOT89 FPD1050SOT89E MIL-HDBK-263 Text: FPD1050SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.8GHZ : • • • • • • 26 dBm Output Power (P1dB) 17.5 dB Small-Signal Gain (SSG) 1.1 dB Noise Figure 40 dBm Output IP3 50% Power-Added Efficiency FPD1050SOT89E: RoHS compliant	Original	PDF	FPD1050SOT89 FPD1050SOT89E: 2002/95/EC) FPD1050SOT89 MIL-STD-1686 MIL-HDBK-263. FPD1050SOT89E TRANSISTOR A114 E FPD1050SOT89E MIL-HDBK-263
ims pcb Abstract: No abstract text available Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency	Original	PDF	FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb
P3F filtronic Abstract: pHEMT FET marking A FPD10000AF MIL-HDBK-263 PHEMT marking code a PHEMT marking code B Text: PRELIMINARY FPD10000AF 10W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 40 dBm Output Power (P1dB) ♦ 11 dB Power Gain (G1dB) ♦ -44 dBc WCDMA ACPR at 30 dBm output power ♦ 180 to 300 mA typical quiescent current (IDQ) ♦ 55% Power-Added Efficiency	Original	PDF	FPD10000AF FPD10000AF FPD10000AF) P3F filtronic pHEMT FET marking A MIL-HDBK-263 PHEMT marking code a PHEMT marking code B
UM3750 Abstract: A114 A115 FPD10000V JESD22 wedge Filtronic Text: PRELIMINARY FPD10000V 10W POWER PHEMT FOR WIMAX POWER AMPLIFIERS • • PERFORMANCE 3.5 GHz (802.16-2004 WiMAX Modulation) ♦ 30 dBm Output Power, < 2.5% EVM ♦ 9.5 dB Power Gain ♦ Class AB Efficiency 10% (10V / 1A IDQ) GATE DRAIN ♦ Class B Efficiency 18% (8V / 300 mA IDQ)	Original	PDF	FPD10000V FPD10000V UM3750 A114 A115 JESD22 wedge Filtronic
FPD1050SOT89 Abstract: No abstract text available Text: EB1050SOT89BC FPD1050SOT89 2.0GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 1.95 2.0 23.5 23.6 16.3 16.4 0.8 0.85 36.0 37.0 5V, 80mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively	Original	PDF	EB1050SOT89BC FPD1050SOT89 15GHz. FPD1050SOT89; 1050m 30mil LL1608 LL1005
FPD1050 Abstract: FPD750 MIL-HDBK-263 Text: FPD1050 0.75W POWER PHEMT • • FEATURES ♦ 28.5 dBm Linear Output Power at 12 GHz ♦ 11 dB Power Gain at 12 GHz ♦ 14 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 45% Power-Added Efficiency SOURCE BOND PAD 2x DRAIN BOND PAD (2X) GATE	Original	PDF	FPD1050 FPD1050 reliablL-STD-1686 MIL-HDBK-263. FPD750 MIL-HDBK-263

transistor A114 Abstract: FPD1050 Text: FPD1050 Datasheet v3.0 0.75W POWER PHEMT LAYOUT: FEATURES: • • • • • 28.5 dBm Linear O/p Power at 12 GHz 11 dB Power Gain at 12 GHz 14 dB Maximum Stable Gain at 12 GHz 41 dBm Output IP3 45% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1050	Original	PDF	FPD1050 FPD1050 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114
Untitled Abstract: No abstract text available Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100
FPD1050SOT89 Abstract: FPD1050SOT89E MIL-HDBK-263 Text: FPD1050SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.8GHZ : • • • • • • 26 dBm Output Power (P1dB) 17.5 dB Small-Signal Gain (SSG) 1.1 dB Noise Figure 40 dBm Output IP3 50% Power-Added Efficiency FPD1050SOT89E: RoHS compliant	Original	PDF	FPD1050SOT89 FPD1050SOT89E: 2002/95/EC) FPD1050SOT89 MIL-STD-1686 MIL-HDBK-263. FPD1050SOT89E FPD1050SOT89E MIL-HDBK-263
CAPACITOR 33PF Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT	Original	PDF	FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
transistor SMD P1f Abstract: SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f MIL-HDBK-263 T491B105M035AS7015
transistor Bc 542 Abstract: transistor bc 567 Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power	Original	PDF	FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567
Untitled Abstract: No abstract text available Text: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure	Original	PDF	FPD1050 FPD1050 mx1050Î 12GHz 41dBm FPD1050-000SQ
transistor SMD P1f Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available	Original	PDF	FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
FPD1050SOT89 Abstract: FPD1050SOT89E 941 LG Text: FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features at 2.0GHz The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25 mx1050μm Schottky	Original	PDF	FPD1050SOT89 FPD1050SOT8 FPD1050SOT89 25mx1050m 24dBm 37dBm FPD1050SOT89E FPD1050SOT89CE EB1050SOT89CE-BB 85GHzEvaluation FPD1050SOT89E 941 LG
FPD1050 Abstract: MIL-HDBK-263 FPD1050-000 Text: FPD1050 FPD1050 0.75W Power pHEMT 0.75W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1050 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1050μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The double recessed gate structure	Original	PDF	FPD1050 FPD1050 25mx1050m 12GHz 41dBm FPD1050-000SQ MIL-HDBK-263 FPD1050-000

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Bansbach Easylift FPD-1012A5-CW

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FPD10 Datasheets (9)

FPD10 Datasheets Context Search

Rogers-4003

transistor marking code 1325

transistor SMD P1f

transistor SMD P2F

FPD1050SOT89

eb105

Untitled

SMD Transistor p1f

TRANSISTOR A114 E

ims pcb

P3F filtronic

UM3750

FPD1050SOT89

FPD1050

transistor A114

Untitled

FPD1050SOT89

CAPACITOR 33PF

transistor SMD P1f

transistor Bc 542

Untitled

transistor SMD P1f

FPD1050SOT89

FPD1050