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    transistor marking code 1325

    Abstract: R04003 ims pcb filtronic Solid State
    Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS J-STD-020C, transistor marking code 1325 R04003 ims pcb filtronic Solid State

    transistor SMD P1f

    Abstract: Transistor p1f MARKING P1F SMD Transistor p1f p1f on FPD1000AS MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f Transistor p1f MARKING P1F SMD Transistor p1f p1f on MIL-HDBK-263 T491B105M035AS7015 ON MARKING P1F Filtronic

    transistor SMD P2F

    Abstract: smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 FPD1000AS T491B105M035AS7015 filtronic Solid State
    Text: FPD1000AS Datasheet v3.0 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS J-STD-020C, transistor SMD P2F smd p2f transistor smd code z16 transistor marking code 1325 transistor z14 smd 0604HQ-1N1 T491B105M035AS7015 filtronic Solid State

    SMD Transistor p1f

    Abstract: bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD FPD1000AS MIL-HDBK-263
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 SMD Transistor p1f bd 222 smd MARKING P1F smd p1f transistor SMD P1f marking code 68W PHEMT marking code a transistor BD 222 SMD MIL-HDBK-263

    transistor SMD P1f

    Abstract: atc600s marking code 68W MARKING P1F SMD Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015 Transistor p1f CB100
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f atc600s marking code 68W MARKING P1F SMD Transistor p1f MIL-HDBK-263 T491B105M035AS7015 Transistor p1f

    ims pcb

    Abstract: No abstract text available
    Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb

    ATC600S680JW250

    Abstract: PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R
    Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 ATC600S680JW250 PC-SP-000010-006 AMP-103185-2 atc600s ATC600S5R T491B105M035AS7015 ATC600S2R0BW250 ATC600S680 ATC600S3R

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY • • FPD1000AS 1W PACKAGED POWER PHEMT PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100

    CAPACITOR 33PF

    Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features „ „ „ „ Optimum Technology Matching Applied „ „ GaAs HBT „ DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT


    Original     		PDF FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor

    transistor SMD P1f

    Abstract: SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f FPD1000AS MIL-HDBK-263 T491B105M035AS7015
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f PHEMT marking code a MARKING P1F Transistor p1f MIL-HDBK-263 T491B105M035AS7015

    transistor Bc 542

    Abstract: transistor bc 567
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 85GHz) EB-1000AS-AA 14GHz) transistor Bc 542 transistor bc 567

    transistor SMD P1f

    Abstract: R04003 A114 A115 FPD1000AS JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f R04003 A114 A115 JESD22 ATC600S5R6CW250 PHEMT marking code a ATC600S680 marking code P1F

    70GHz HEMT Amplifier

    Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		PDF FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 880MHz) EB1000AS-AB 70GHz HEMT Amplifier smd code z16 transistor z14 smd T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf

    transistor SMD P1f

    Abstract: SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F
    Text: FPD1000AS 1W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 31 dBm Output Power (P1dB) ♦ 15 dB Power Gain (G1dB) ♦ 43 dBm Output IP3 ♦ -42 dBc WCDMA ACPR at 21 dBm PCH ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available


    Original     		PDF FPD1000AS FPD1000AS R04003, CB100 transistor SMD P1f SMD Transistor p1f R04003 marking code 68W transistor BD 222 SMD MARKING P1F rci-0402 bd 222 smd TRANSISTOR SMD MARKING CODE mf ON MARKING P1F