bts 43202
Abstract: BTS432E2-E3062A BTS 732 3H DIODE smd smd transistor jst BTS432E2 E3062A SMD code E2 thermal overload relay fas E3043 Q67060-S6202-A2
Text: • 0235bOS ODfilMTb TTT SIEMENS PROFET BTS 432 E2 Smart Highside Power Switch Product Summary Features • • • • • • • • • • • • Load dump and reverse battery protection1 80 M_oad dump Clamp of negative voltage at output 58 V bb-VouT Avalanche Ciatnp
|
OCR Scan
|
0235bOS
fl23Sb05
O-220AB/5
Q67060-S6202-A2
CPT0SI65
O-22QAB/5,
E3043
Q67060-S6202-A4
bts 43202
BTS432E2-E3062A
BTS 732
3H DIODE smd
smd transistor jst
BTS432E2 E3062A
SMD code E2
thermal overload relay fas
Q67060-S6202-A2
|
PDF
|
Q67100-H5092
Abstract: SDA 2516-5
Text: S IE M E N S Nonvolatile Memory 1-Kbit E2PROM SDA 2516-5 Preliminary Data MOS IC Features • • • • • • • • • • W ord-organized reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM 128 x 8-bit organization Supply voltage 5 V
|
OCR Scan
|
Q67100-H5092
00b3272
SDA 2516-5
|
PDF
|
tca 335 A
Abstract: tca 765 TCA335A
Text: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range
|
OCR Scan
|
fl23SbOS
Q67000-A2272
Q67000-A227Ã
fl235b05
0034b5M
TCA335
tca 335 A
tca 765
TCA335A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 256 K x 16-Bit Dynamic RAM HYB 514171BJ-60/-70 Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh HYB 514171BJL-60/-70 Advanced Inform ation 262 144 w ords by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time Low Power dissipation
|
OCR Scan
|
16-Bit
514171BJ-60/-70
16-Bit
514171BJL-60/-70
23SbOS
00713S?
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ÔSaSbQS D D 3 2 m b 4?E ì> SIEMENS 4 • S IE G SIEMENS AKTIENGESELLSCHAF Token Bus Modem TBM SAB 82511 Advanced Information • • • • • Carrier-band modem fully compatible with IEEE 802.4 and MAP Standard 5 and 10 Mbit/s data rate using phase-coherent FSK modulation
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 1M X 72-Bit Dynamic RAM Module ECC - Module HYM 721000GS-60/-70 Prelim inary Inform ation • 1 048 576 w ords by 72-bit ECC - mode organization • All inputs, outputs and clock fully TTL compatible • Fast access and cycle time 60 ns access time
|
OCR Scan
|
72-Bit
721000GS-60/-70
74ABT244
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS IS D N S u b s c rib e r A c c e s s C o n tro lle r fo r U pn-In te rfa c e T e rm in a ls S m a rtL in k -P PSB 2197 Preliminary Data 1 CMOS 1C Features • Cost/performance-optimized Upn-interface transceiver, compatible to PEB 2096 OCTAT-P and
|
OCR Scan
|
P-DSO-28-1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212
|
OCR Scan
|
fi23SbOS
0031bl0
82C212
M/256
640CHAF
SAB82C212
|
PDF
|
3Tg 21 10 siemens
Abstract: 3TG siemens smd transistor ng ha T72 diode of 45 kv BTS432 BTS 432 E3062A siemens 3TG BTS432F* smd Q67060-S6203-A4 3Tg 21 20 siemens
Text: SIEMENS ö23SbüS OOTclfibO ] i b 3 WË PROFET BTS 432 F2 Smart Highside Power Switch Features • • • • • • • • • • • • Product Summary Load dump and reverse battery protection1 H-oad dump 80 Clamp of negative voltage at output Vbb- V o u t Avalanche Clamp
|
OCR Scan
|
023StÃ
O-22QAB/5
Q67060-S6203-A2
O-22QAB/5,
E3043
E3043
Q67060-S6203-A4
cpt031m
E3062
3Tg 21 10 siemens
3TG siemens
smd transistor ng ha
T72 diode of 45 kv
BTS432
BTS 432 E3062A
siemens 3TG
BTS432F* smd
Q67060-S6203-A4
3Tg 21 20 siemens
|
PDF
|
Siemens b41306
Abstract: Siemens B43306
Text: Capacitors with Solder Pins GP Grade B 41 306 B 43 306 Standard version with high ripple current capability Rated voltage up to 500 Vdc Construction • • • • Charge-discharge proof, polar Aluminum case, fully insulated Overload protection by preset break point in case
|
OCR Scan
|
KAL0273-2
fl23SbOS
0235b05
Siemens b41306
Siemens B43306
|
PDF
|
VOC sensor
Abstract: vbb resistor 45VTYP RXJ Series
Text: Preliminary data SIEMENS BTS 620 TWO CHANNEL PROFET Description PROFET R an intelligent power switch with integrated Two independent high-side switches Overtemperature protection for each channel Overload protection for each channel Short circuit protection by overtemperature protection 2
|
OCR Scan
|
fi23Sb05
A23SbDS
0G5Mfl73
VOC sensor
vbb resistor
45VTYP
RXJ Series
|
PDF
|
SIEMENS 3 TB 40 12 - 0A
Abstract: BTS555P BTS555 siemens profet siemens 12V small relays BTS current sense siemens SIEMENS 3 TB 40 10 - 0A
Text: flEBSbDS SIEM ENS □ D ‘ì 2 c142 GET PROFET Target Data Sheet BTS 555 P Smart Highside High Current Power Switch Features • • • • • • • • • • • • Overload protection Current limitation Short circuit protection Overtemperature protection
|
OCR Scan
|
O-218AB/5
BTS555P
Q67060-tbd-tbd
O-218AB/5
E3146
BTS555P
E3146
023SbOS
SIEMENS 3 TB 40 12 - 0A
BTS555
siemens profet
siemens 12V small relays
BTS current sense siemens
SIEMENS 3 TB 40 10 - 0A
|
PDF
|
MSD2310TXV
Abstract: MIL-D-87157 MSD2310 7 dot LED LEVEL METER DRIVER
Text: SIEMENS AKTIENGESELLSCHAF SIEM EN S 47E D • 053SbDS □027DGC| 2 « S I E G MSD231 O T X V / T X V B t - hv- 3 7 YELLOW MSD2311TXV/TXVB h ig h eff . r e d MSD2312TXV/TXVB HIGH EFF. GREEN MSD2313TXV/TXVB red .200" 4-Character 5x7 Dot Matrix Serial Input Alphanumeric Military Display
|
OCR Scan
|
Z35b05
MSD2310TXV/TXVBt
MSD2311TXV/TXVB
MSD2312TXV/TXVB
MSD2313TXV/TXVB
520rrv
T-41-37
MSD2310
MSD2313TXWTXVB
MSD2310TXV
MIL-D-87157
7 dot LED LEVEL METER DRIVER
|
PDF
|
1kt marking code
Abstract: tank if SMD MARKING CODE MCL T1-1T neosid 47 neosid NEOSID s4 smd marking code pp ITS03104 MARKING CODE SMD IC Q67000-A6084
Text: SIEM EN S Quadrature Phase Modulator PMB 2205 Preliminary Data Bipolar IC Features • • • • • • • • • • • • • • • • • Double-balanced mixers Direct modulation Linear modulating inputs Symmetrical circuitry Generation of orthogonal carriers within a wide
|
OCR Scan
|
flE3Sb05
1kt marking code
tank if SMD MARKING CODE
MCL T1-1T
neosid 47
neosid
NEOSID s4
smd marking code pp
ITS03104
MARKING CODE SMD IC
Q67000-A6084
|
PDF
|
|
|
smd diode code b54
Abstract: smd transistor c015 BUZ101S E3045 Q67040-S4013-A2 smd code book 71ss TRANSISTOR SMD MARKING CODE c015 01333LA
Text: BUZ101S Infineon ta c h n ol o g ¡ u m p f ° v c d Ro8'°”’ SIPMOS PowerTransistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance R0S on • Avalanche rated Continuous drain current
|
OCR Scan
|
BUZ101S
P-T0220-3-1
Q67040-S4013-A2
E3045A
P-T0263-3-2
Q67040-S4013-A6
E3045
smd diode code b54
smd transistor c015
smd code book
71ss
TRANSISTOR SMD MARKING CODE c015
01333LA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS Extended Line Card Interface Controller ELIC 1 PEB 20550 PEF 20550 Features Switching EPIC®-1 • Non-blocking switch for 32 digital (e.g. ISDN) or 64 voice subscribers - Bandwidth 16, 32, or 64 kbit/s - Two consecutive 64-bit/s channels can be
|
OCR Scan
|
64-bit/s
128-kbit/s
IA-BIDfCl80x
1A-BID180x
0235b05
54CC2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS S/T Bus Interface Circuit Extended 1 PEB 2081 Features • Full duplex 2B+D S/T-interface transceiver according to the following specifications: - ITU Recommendation 1.430 - ETS 300 012 - ANSI T1.605 • 192 kbit/s transmission rate • Pseudo-ternary coding with 100 % pulse width
|
OCR Scan
|
P-LCC-28-R
EJ06touÂ
N025IAI
GPL05018
fl235b05
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BSO 220N Infineon t«ehneiog¡«i Preliminary Data SIPMOS Small-Signal-Transistor Product Summary Features • Dual N Channel Drain source voltage • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current 20 V ^fos on
|
OCR Scan
|
BS0220N
Q67000-S4010
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
D13377T
|
PDF
|
TLE4216 G
Abstract: No abstract text available
Text: tDE D I fl235bOS OOSObMl Tb2 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF Intelligent Sixfold Low-Side Switch TLE 4216 Features • Double low-side switch, 2 x 0.5A • Quad low-side switch, 4 x 50 mA • Power limitation • Open-collector outputs • Overtemperature shutdown
|
OCR Scan
|
fl235bOS
0TLE4216
Q67000-A8237
P-DIP-20-1
Q67000-A9108
P-DSO-24-1
fl235b05
AED00916
AED0D724
AED00725
TLE4216 G
|
PDF
|
siemens mov all range
Abstract: intel 80c535 n
Text: 47E D • 023SbDS OOaô'ID? b » S I E G SIEMENS AKTIENGESELLSCHAF T- s SAB 80C515/80C535 8-Bit CMOS Single-Chip Microcontroller Advance Inform ation SAB 80C515 / 80C515-16 CMOS microcontroller with factory mask-programmable ROM SAB 80CS35 / 80C535-16 CMOS microcontroller for external ROM
|
OCR Scan
|
023SbDS
80C515/80C535
80C515
80C515-16
80CS35
80C535-16
80C515-T40/110,
80C535-T40/110
80C515-T40/85,
80C53S-T40/85
siemens mov all range
intel 80c535 n
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS 3 mm T1 LED, Non Diffused LS P380, LO P380, LY P380 LG P380, LP P380 Besondere Merkm ale • • • • • • farbloses, klares G ehäuse zur Einkopplung in Lichtleiter als optischer Indikator einsetzbar Lötspieße m it Aufsetzebene gegurtet lieferbar
|
OCR Scan
|
flP35bOS
005fllb2
flE35bOS
00SBlb3
|
PDF
|
smd marking YB
Abstract: Q67100-Q1557 405AJ 3164405AT-60 SMD MARKING CODE 09t P-SOJ-32-1 TSOP-32 ACS42
Text: SIEM ENS 16M 4-Bit Dynam ic RAM u X 4k & 8k-Refresh, EDO-version HYB 3164405AJ/AT(L) -40/-50/-60 «Y B 3165405AJ/AT(L) -40/-50/-60 X P r e lim in a r y In fo rm a tio n • • • • 16 777 216 words by 4-bit organization 0 to 70 ”C operating tem perature
|
OCR Scan
|
3164405AJ/AT
3165405AJ/AT
235b05
405AJ/AT
0535bD5
S7017
smd marking YB
Q67100-Q1557
405AJ
3164405AT-60
SMD MARKING CODE 09t
P-SOJ-32-1
TSOP-32
ACS42
|
PDF
|
SFH 462
Abstract: 462-L sfh462 7080C
Text: SIEMENS GaAIAs-IR-Lumineszenzdiode GaAIAs Infrared Emitter SFH 462 Wesentliche Merkmale Features • Strahlung im sichtbaren Rotbereich ohne IRAnteil • Kathode galvanisch mit dem Gehäuseboden verbunden • S e h r hoher W irkungsgrad • Hohe Zuverlässigkeit
|
OCR Scan
|
SFH462
flE35bOS
SFH 462
462-L
sfh462
7080C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 170W Silicon Schottky Diode • • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Small package SOD-323 ESP: Electrostastic discharge sensitive device, observe handling précautions!
|
OCR Scan
|
OD-323
BAS170W
Q62702-A1072
53SbDS
D1ED353
flE35bOS
G120324
fl535b05
|
PDF
|