3da92
Abstract: No abstract text available
Text: bSE D • ÔE3StiGS GDS3414 =144 ISIE6 SIEM ENS SIEMENS AKTIENGESELLSCHAF 868352 - Bit Dynamic Sequential Access Memory for Television Applications TV - SAM Preliminary Data SDA 9251X CMOS IC Features • 212 x 64 x 16 x 4 bit organization • Triple port architecture
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GDS3414
33-MHz
27-Gbit/s
3da92
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TAE 4453 A
Abstract: No abstract text available
Text: bOE ]> • ö23SbDS D O M W O SIEMENS Ô23 H S I E â SIEMENS AKTIENGESELLSCHAF T Quad PNP Operational Amplifier • • • • • • ? '0 7 - ^ o TAE 4453 TAF 4453 Features • • • • " 7 Bipolar 1C Supply voltage range between 3 V and 36 V Low current consumption, 1,6m A typ.
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23SbDS
fl53SbQS
TAE 4453 A
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Untitled
Abstract: No abstract text available
Text: SIEMENS 3.3V 16M x 64-Bit EDO-DRAM Module 3.3V 16M x 72-Bit EDO-DRAM Module HYM 64V1605GU-50/-60/-70 HYM 64V1645GU-50/-60/-70 HYM 72V1605GU-50/-60/-70 HYM 72V1645GU-50/-60/-70 168pin unbuffered DIMM Module with serial presence detect Preliminary Information
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64-Bit
72-Bit
64V1605GU-50/-60/-70
64V1645GU-50/-60/-70
72V1605GU-50/-60/-70
72V1645GU-50/-60/-70
168pin
E3Sb05
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: BSP 171P Inf ineon technologies Preliminary Data SIPMOS Small-Signal-Transistor Features Product Summary • P Channel Drain source voltage Vbs -60 V • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current wDS on 0.3
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BSP171P
P-SOT223-4-1
Q67041-S4019
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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sab80186
Abstract: SAB 80186
Text: M7E D SIEMENS m ö 2 3S bD S 0 0 3 0 7 1 0 0 « S I E G SI EM EN S A K T I E N G E S E L L S C H A F High-Integration 16-Bit Microprocessor SAB 80186 Preliminary SAB 80186 8 M H z SAB 80186-1 10 M H z • In te g ra te d fe a tu re set - e n h a n ce d SAB 8086-2 CPU
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16-Bit
0235bDS
G03D7bE
fl235b05
SAB80186
sab80186
SAB 80186
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diode 351
Abstract: SIPMOS N-channel
Text: ÛÔD D • Ô535b05 OQISGSb ô HSIEfi SIEMENS AKTIENGESELLSCHAF 7 “" 3 ^ r' / 3 Main ratings N-Channel Draln-source voltage Continuous drain current Draln-source on-reslstance Description Case Type BUZ 351 400 V 11,5 A 0,4 Q ’ OS on SIPMOS, N-channel, enhancement mode
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535b05
C67078-A3103-A2
as35b0s
A235b05
001SQ31
diode 351
SIPMOS N-channel
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6-BT
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099
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Q62702-A1017
OT-143
flS35bOS
6-BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 158 PNP Silicon Digital Transistor * Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor Ri=2.2ki2, R2=47k£2 □ Pin Configuration Q62702-C2338 1 =B Package II CO WIs O Marking Ordering Code BCR 158 LU II
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Q62702-C2338
OT-23
300ns;
D1S0773
D1HG77H
fl53SbQS
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