FET APPLICATION NOTE Search Results

LED interfacing with MSP430

Abstract: MSP-FETP430IF MSP430Fe4xx "Optical Couplers" Connector d-sub 25 pin msp430 motor MSP430Fxxx Optical Couplers SBOS032 311-1142-1-ND
Contextual Info: Application Report SLAA184 –October 2003 MSP430 Isolated FET Interface Andreas Dannenberg MSP430 ABSTRACT This application report describes how to build an isolated FET interface for the MSP430 Flash Emulation Tool FET . When developing and debugging line-powered MSP430

FET differential amplifier circuit

Abstract: fet differential amplifier schematic DC bias of gaas FET
Contextual Info: æ Agom Application Note Æ a n A M P com pany Suggested Circuit Controller for a Dual-Control FET VVA in AGC Temperature Compensationt M524 Experimental Series FET — O— Experimental (Shunt FET) - A - •Calc (Series FET) — □ — Calc (Shunt FET)

application notes

Contextual Info: APPLICATION NOTES APPLICATION NOTES I. PACKAGED FETs and MODULES A. Handling Precautions B. Circuit Installation C. Package Markings II. FET CHIPS A. Removal of GaAs FET and HEMT Chips From Shipping Containers B. Circuit Installation C. Equivalent Circuit

Fujitsu GaAs FET application note

Abstract: FLL1500IU-2C TC701 fujitsu GHz gaas fet RG capacitor uhf microwave fet fujitsu power amplifier GHz
Contextual Info: APPLICATION NOTE NUMBER 010 High-Power GaAs FET Device Bias Considerations The purpose of this application note is to give some general basic guidelines to bias high-power GaAs FET devices safely. However these guidelines are not a complete insurance against oscillations since

NE70083

Abstract: NE372800 AN83901 NE372 NE71083 Matching Transformer - line matching transformed AN-PF-1007
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

NE70083

Abstract: NE372 planar transformer theory small signal GaAs FET x-band microwave fet NE71083 DLI-1988-1
Contextual Info: California Eastern Laboratories AN-PF-1007 APPLICATION NOTE Designing High Power GaAs FET Amplifiers Using Single Cell FET Parameters INTRODUCTION Many different power GaAs FET die types are available from NEC. With the recent development of the NE430, NE345L,

7400A

Abstract: C-Band Power GaAs FET HEMT Chips electrostatic precipitator TIM6472-8 GAAS FET AMPLIFIER x-band 10w TPM2323-30 TIM5053-30L TPM1617 M7179 TPM1617-16
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET APPLICATION NOTES Recommended Assembly Methods for GaAs FET and HEMT Chip Form In assembling the GaAs FET and HEMT chips onto the microstrip circuits, the following die attaching and wire bonding methods are recommended. Precautions

Fujitsu GaAs FET application note

Abstract: atc100a FLL810 Hp 2564 FLL810IQ-3C IMT-2000 S03A2750N1 RFP 1026 resistor fujitsu x band amplifiers "15 GHz" power amplifier 41dBm
Contextual Info: APPLICATION NOTE NUMBER 011 An 80-W, 2.5-2.7 GHz GaAs FET Linear Amplifier for MMDS Application An 80-W, 2.5-2.7 GHz, class AB linear balanced amplifier for MMDS and wireless-data/Internet applications using a GaAs FET quasi E-mode push-pull Fujitsu device was

Curtice

Abstract: fet curtice nonlinear model fet curtice LAMBDA alpha 400 NE33200 FET model NE71300 Alpha 1000 GaAsFET pspice
Contextual Info: California Eastern Laboratories AN1023 APPLICATION NOTE Converting GaAs FET Models For Different Nonlinear Simulators INTRODUCTION GaAs FET MODELS This paper addresses the issues involved in converting GaAs models for different nonlinear simulators. Three nonlinear GaAs FET models are the Curtice[2], the

Contextual Info: GaAs Components Application Notes 8 Application Notes CGY 180 - 3 V 500 mW RF Power Amplifier Solution for DECT . . . . . . . . . . . . . . . . .81 15 GHz GaAs-FET Buffered Oscillator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .85

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

DM74SL04

Abstract: IC DM74LS04 SW109 SW-109 SW SPDT fairchild m539 SW-3951 ttl and cmos digital ic sw-419 SWD-119
Contextual Info: S2079 Application Note Drivers for GaAs FET Switches And Digital Attenuators Introduction Many of M/A-COM's GaAs FET switches and digital attenuators cannot operate directly with simple TTL or CMOS logic, but instead require external circuits to provide appropriate control voltages. This application note, an update of M539, Drivers for GaAs

HN7G02FU

Abstract: 2SK1830 RN2110 2SK183
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

2SK1830

Abstract: HN7G02FU RN2110
Contextual Info: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent

irf740 mosfet

Abstract: power MOSFET IRF740 driver circuit HIGH FREQUENCY Transformer ee 19 electronic power generator using transistor gate drive circuit for power MOSFET IRF740 EE 19 Switching Transformer AN3465 irf740 application note simple electronic transformer DIODE D5
Contextual Info: Maxim > App Notes > COMMUNICATIONS CIRCUITS Keywords: galvanic isolation, transformer-driver, power FET, power electronics Mar 14, 2005 APPLICATION NOTE 3465 Simple Power-FET Driver is Isolated and DCCoupled Abstract: An isolated transformer-driver IC MAX845 and small external transformer produce an isolated gatecontrol signal for a power FET.

Contextual Info: Application Note M539 Drivers for GaAs FET MMIC Switches and Digital Attenuators Rev. V4 Application Note Design Considerations M/A-COM Technology Solutions’ Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that drives GaAs

Contextual Info: HAF2001 Silicon N-Channel MOS FET Series HITACHI ADE-208-353C 13th. Edition Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has

schematic adsl modem board

Abstract: generator voltage pwm schematic buck converter various PWM techniques EL7566 47 uf capacitor schematic circuit adsl modem board sepic converter 550khz AN1209 EL7532 ISL6410
Contextual Info: Intersil Integrated FET DC/DC Converters Application Note February 23, 2006 AN1209.0 Author: Alan Rich Table of Contents Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

FDS6375

Abstract: CDRH104R-2R5 1N5819HW MIC2193 MIC2193BM NDS8425 Si4403DY Si4866DY R012F
Contextual Info: Application Hint 70 MIC2193 3.3V to 2.5V/5A with Ceramic Cout Application Circuit By Steven Chenetz General Description The MIC2193 is a 400kHz Synchronous Buck controller that uses a P-channel high-side FET. It has the advantage of running at 100% duty cycle high-side Fet

MACOM MMIC RF AMP

Abstract: SW-338 SWD-109 SWD-119 DC bias of gaas FET
Contextual Info: Mfecm Application Note M an A M P com pany Drivers for GaAs FET MMIC Switches and Digital Attenuators M539 V 2.00 Application Note Design Considerations M/A-COM's Microelectronics Division produces a silicon CMOS Application Specific Integrated Circuit ASIC that

HD74LS08

Abstract: HAF2001 Hitachi DSA0073
Contextual Info: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down

Hitachi DSA002759

Contextual Info: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down

Omron

Contextual Info: G3VM-354C/F MOS FET Relays Analog-switching MOS FET Relays with DPST-NC Contact. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples ■ Terminal Arrangement/Internal Connections • Communication equipment

G3VM-353B

Abstract: MOS FET Relays Omron
Contextual Info: G3VM-353B/E MOS FET Relays DIP 6-pin package, Analog-switching MOS FET Relays with SPST-NC Contact. RoHS compliant Note: The actual product is marked differently from the image shown here. • Application Examples ■ Terminal Arrangement/Internal Connections