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    2SK183 Search Results

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    2SK183 Price and Stock

    Rochester Electronics LLC 2SK1839-TL-E

    NCH 0.1A 30V MOSFET
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    DigiKey 2SK1839-TL-E Bulk 45,000 5,323
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    Rochester Electronics LLC 2SK1838STR-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1838STR-E Bulk 3,000 141
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    Rochester Electronics LLC 2SK1838S-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1838S-E Bulk 2,810 141
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    Rochester Electronics LLC 2SK1838L-E

    N-CHANNEL POWER MOSFET
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    DigiKey 2SK1838L-E Bulk 1,776 141
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    Renesas Electronics Corporation 2SK1835-E

    Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3P - Rail/Tube (Alt: 2SK1835-E)
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    Avnet Americas 2SK1835-E Tube 18 Weeks 240
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    Verical 2SK1835-E 11 9
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    Newark 2SK1835-E Bulk 1
    • 1 $12.16
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    Avnet Asia 2SK1835-E 12 Weeks 270
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    Avnet Silica 2SK1835-E 20 Weeks 30
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    Find more 2SK183 price and stock on Findchips.com

    2SK183 Datasheets (108)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK183 Unknown FET Data Book Scan PDF
    2SK183 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1830 Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: SSM; XJE016 JEITA: SC-75; Number of Pins: 3; V th (V): (min 0.5) (max 1.5); R DS On 20 (max 40); Drain-Source Voltage (V): (max 20); Drain Current (mA): (max 50) Original PDF
    2SK1830 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1830 Toshiba TRANS MOSFET N-CH 20V 0.05A 3(2-2H1B) Scan PDF
    2SK1830 Toshiba Silicon N channel field effect transistor for high speed switching applications and analog switch applications Scan PDF
    2SK1830 Toshiba FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE Scan PDF
    2SK1830TE85L Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF
    2SK1830(TE85L,F) Toshiba 2SK1830 - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
    2SK1830TE85LF Toshiba 2SK1830TE85LF - Trans MOSFET N-CH 20V 0.05A 3-Pin SSM T/R Original PDF
    2SK1830TE85R Toshiba 2SK1830 - TRANSISTOR 50 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal Original PDF
    2SK1831 Hitachi Semiconductor Silicon N-Channel MOS FET Original PDF
    2SK1831 Hitachi Semiconductor Silicon N Channel MOS FET Original PDF
    2SK1831 Hitachi Semiconductor Mosfet Guide Original PDF
    2SK1831 Renesas Technology Silicon N-Channel MOS FET Original PDF
    2SK1831 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    2SK1831 Unknown FET Data Book Scan PDF
    2SK1831 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK1831 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SK1832 Hitachi Semiconductor Mosfet Guide Original PDF

    2SK183 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON N CHANNEL MOS TYPE 2SK1830 HIGH SPEED SW ITCHING APPLICATIONS. A N A L O G SWITCH APPLICATIONS. • 2.5 V olts G ate D rive. • Low Threshold V oltage : V th = 0 .5 ~ 1 .5 V . H igh Speed • Enhancem ent-M ode • S m a ll P ackage MARKING KI M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		2SK1830 PDF

    2SJ347

    Abstract: 2SK1830
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1830 Marking


    Original     		2SJ347 2SK1830 2SJ347 2SK1830 PDF

    k1832

    Abstract: K1831 2SK1157 2SK1158 2SK1831 2SK1832
    Text: 2SK1831, 2SK1832 Silicon N Channel MOS FET Application TO–3PFM High speed power switching Features • • • • • Low on–resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC–DC converter 2


    Original     		2SK1831, 2SK1832 2SK1831 sou150 k1832 K1831 2SK1157 2SK1158 2SK1831 2SK1832 PDF

    TOP-220

    Abstract: TOP220 top 220 2SK1834 2SK183
    Text: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 4.2±0.2 2.7±0.2 φ3.1±0.1 4.0


    Original     		2SK1834 SC-67 OP-220 TOP-220 TOP220 top 220 2SK1834 2SK183 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1836, 2SK1837 Silicon N-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter


    OCR Scan     		2SK1836, 2SK1837 2SK1836 K1836 K1837 PDF

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1831, 2SK1832 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline


    Original     		2SK1831, 2SK1832 2SK1831 2SK1832 K1831 K1832 D-85622 Hitachi DSA002748 PDF

    Hitachi DSA002748

    Abstract: No abstract text available
    Text: 2SK1835 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500V High speed switching Low drive current No secondary breakdown Suitable for switching regulator Outline and Equivalent Circuit


    Original     		2SK1835 D-85622 Hitachi DSA002748 PDF

    2SJ347

    Abstract: 2SK1830
    Text: TO SH IBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ347 Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V t h = —0.5 ~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


    OCR Scan     		2SJ347 2SK1830 2SJ347 2SK1830 PDF

    2SJ347

    Abstract: 2SK1830
    Text: TOSHIBA 2SJ347 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ347 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANAROG SWITCH APPLICATIONS • Low Threshold Voltage : V ^ ——0.5~ —1.5V • High Speed • Small Package • Complementary to 2SK1830


    OCR Scan     		2SJ347 2SK1830 10//S 2SJ347 2SK1830 PDF

    TOP-220

    Abstract: top 220 2SK1834 2sk18 TOP220
    Text: Power F-MOS FETs 2SK1834 Silicon N-Channel Power F-MOS FET • Features ● Avalanche energy capacity guaranteed: EAS > 15mJ ● VGSS = ±30V guaranteed ● High-speed switching: tf = 25ns ● No secondary breakdown 16.7±0.3 7.5±0.2 4.0 14.0±0.5 Symbol


    Original     		2SK1834 SC-67 OP-220 TOP-220 top 220 2SK1834 2sk18 TOP220 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN7G01FU 2SA1955 2SK1830 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking


    Original     		2SK1830 PDF

    2SK1835

    Abstract: No abstract text available
    Text: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator


    Original     		2SK1835 REJ03G0978-0400 PRSS0004ZE-A REJ03G0978-0400 2SK1835 PDF

    2SK1830

    Abstract: HN7G02FU RN2110
    Text: HN7G02FU TOSHIBA Multi Chip Discrete Device HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. Unit: mm Q1 transistor : RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent


    Original     		HN7G02FU RN2110 2SK1830 HN7G02FU PDF

    2SJ347

    Abstract: 2SK1830 Toshiba 2SJ
    Text: 2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1830 Marking Unit: mm


    Original     		2SJ347 2SK1830 2SJ347 2SK1830 Toshiba 2SJ PDF

    2SK2829

    Abstract: Spl 740 2sk1 2SK2728 28K13 2SK151
    Text: POWER MOS FET •General switching 23 133» o 12 o CO | 28K1340 2SK1341 2SK1342 2SKW01 2SK1401A 259(1403 2SK1403A 2SK1515A 2SK1516A 2SK1517A 2SK1518A 2SK1573 2SK1668A 8SK1671 »«7 7 3 2SK1835 2SK1933 2SK1934 2SK1968 2SK2007A 2SK2075 2SK2096 2SK2554 2SK2586


    OCR Scan     		2SK2912 2SK2938 2SK2939 2SK2940 2SK2957 2SK2958 2SJ21S 2SJ217 28K1161 2SK1162 2SK2829 Spl 740 2sk1 2SK2728 28K13 2SK151 PDF

    2SK1835

    Abstract: 2SK1835-E PRSS0004ZE-A SC-65
    Text: 2SK1835 Silicon N Channel MOS FET REJ03G0978-0400 Rev.4.00 Jun 04, 2008 Application High speed power switching Features • • • • • High breakdown voltage VDSS = 1500 V High speed switching Low drive current No secondary breakdown Suitable for switching regulator


    Original     		2SK1835 REJ03G0978-0400 PRSS0004ZE-A REJ03G0978-0400 2SK1835 2SK1835-E PRSS0004ZE-A SC-65 PDF

    2SA1955

    Abstract: 2SK1830 HN7G01FU 2SK1830 MOSFET
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent • Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Absolute Maximum Ratings (Ta = 25°C)


    Original     		HN7G01FU 2SA1955 2SK1830 HN7G01FU 2SK1830 MOSFET PDF

    HN7G01FU

    Abstract: 2SA1955 2SK1830 Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA
    Text: HN7G01FU Preliminary TOSHIBA Multi Chip Discrete Device HN7G01FU Power Management Switch Application Driver Circuit Application Interface Circuit Application • Q1 transistor : 2SA1955 equivalent · Q2 (MOS-FET): 2SK1830 equivalent Unit: mm Q1 (transistor) Maximum Ratings (Ta = 25°C)


    Original     		HN7G01FU 2SA1955 2SK1830 HN7G01FU Power MOSFET, toshiba HIGH POWER MOSFET TOSHIBA PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 3 0 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package


    OCR Scan     		2SK1830 PDF

    2824R

    Abstract: 2SK1839 EN4634 sanyo OIS
    Text: Ordering num ber: EN4634 2SK1839 No.4634 SANYO i N -Channel E nhancem ent MOS Silicon FET Analog Switch Applications F e a tu re s • Very small-sized package perm itting 2SK1839-applied sets to be made sm all and slim. • Large I Yfs I • Enhancem ent type.


    OCR Scan     		2SK1839 2SK1839-applied 10//A 2824R EN4634 sanyo OIS PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Type SMD Product specification 2SK1838S TO-252 Features Low on-resistance +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Suitable for switchingregulator, DC-DC converter +0.1 0.60-0.1 2.3 +0.15 5.55-0.15


    Original     		2SK1838S O-252 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK1830 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1830 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5 to 1.5 V • High speed • Enhancement-mode • Small package


    Original     		2SK1830 PDF

    8150 diode

    Abstract: Hitachi DSA002779
    Text: 2SK1836, 2SK1837 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-3PL D


    Original     		2SK1836, 2SK1837 K1836 K1837 D-85622 8150 diode Hitachi DSA002779 PDF