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    HAF2001 Search Results

    HAF2001 Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    HAF2001 Renesas Electronics Corporation Silicon N Channel MOS FET Series Power Switching, TO220AB, / Visit Renesas Electronics Corporation
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    HAF2001 Price and Stock

    Rochester Electronics LLC HAF2001-90-E

    N-CHANNEL POWER MOSFET
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    DigiKey HAF2001-90-E Bulk 99
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    Renesas Electronics Corporation HAF2001-90-E

    - Trays (Alt: HAF2001-90-E)
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    Avnet Americas HAF2001-90-E Tray 450
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    Verical HAF2001-90-E 746 95
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    HAF2001-90-E 413 95
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    Rochester Electronics HAF2001-90-E 1,159 1
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    Renesas Electronics Corporation HAF200190E

    POWER SWITCHING SILICON N CHANNEL MOS FET Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ; ECCN: EAR99
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    ComSIT USA HAF200190E 2,227
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    HAF2001 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HAF2001 Hitachi Semiconductor Mosfet Guide Original PDF
    HAF2001 Hitachi Semiconductor Thermal MOS FETs Original PDF
    HAF2001 Renesas Technology Silicon N Channel MOS FET Series Power Switching Original PDF
    HAF2001 Renesas Technology Silicon N Channel MOS FET Power Switching Original PDF
    HAF2001-90 Renesas Technology Silicon N Channel MOSFET Series Power Switching Original PDF
    HAF2001-E Renesas Technology FET Transistor: Silicon N Channel MOS FET Series Power Switching Original PDF

    HAF2001 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HAF2001

    Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
    Text: HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0600 Previous: ADE-208-353D Rev.6.00 Sep 07, 2005 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down


    Original     		HAF2001 REJ03G1134-0600 ADE-208-353D) PRSS0004AC-A HAF2001 HAF2001-90 HD74LS08 PRSS0004AC-A PDF

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: HAF2001 Silicon N-Channel MOS FET Series November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shutdown the gate voltage in case of high junction temperature like applying over power consumption, over


    Original     		HAF2001 220AB D-85622 Hitachi DSA002749 PDF

    HD74LS08

    Abstract: HAF2001 Hitachi DSA0073
    Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down


    Original     		HAF2001 220AB HD74LS08 HAF2001 Hitachi DSA0073 PDF

    HAF2001

    Abstract: HD74LS08 DSA003641
    Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353D Z 5th. Edition Mar. 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit


    Original     		HAF2001 ADE-208-353D 220AB HAF2001 HD74LS08 DSA003641 PDF

    HAF2001

    Abstract: HD74LS08
    Text: HAF2001 Silicon N Channel MOS FET Series Power Switching ADE-208-353 D Z 5th. Edition October 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit


    Original     		HAF2001 ADE-208-353 220AB HAF2001 HD74LS08 PDF

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: ADE–208–353 B Z THERMAL FET HAF2001 Silicon N Channel MOS FET Series 3rd. Edition July 1996 Application TO–220AB Power switching Over temperature shut–down capability 1. Gate 2. Drain 3. Source Features This FET has the over temperature shut–down


    Original     		HAF2001 220AB 220AB Hitachi DSA002759 PDF

    Hitachi DSA002780

    Abstract: No abstract text available
    Text: HAF2001 Silicon N-Channel MOS FET Series ADE-208-353C 4th Edition Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shut-down


    Original     		HAF2001 ADE-208-353C Hitachi DSA002780 PDF

    HAF2001

    Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A HD74LS0
    Text: HAF2001 Silicon N Channel MOS FET Series Power Switching REJ03G1134-0700 Previous: ADE-208-353D Rev.7.00 Apr 27, 2006 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down


    Original     		HAF2001 REJ03G1134-0700 ADE-208-353D) PRSS0004AC-A HAF2001 HAF2001-90 HD74LS08 PRSS0004AC-A HD74LS0 PDF

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-503 1st. Edition Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit


    Original     		HAF2002 ADE-208-503 Hitachi DSA002759 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent PDF

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557 PDF

    RJP63k2

    Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
    Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching


    Original     		R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 PDF

    Hitachi DSA002732

    Abstract: No abstract text available
    Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut–down Capability ADE-208-503 1st. Edition Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit


    Original     		HAF2002 ADE-208-503 Hitachi DSA002732 PDF

    HAF2001

    Abstract: HAF2001-90 HD74LS08 PRSS0004AC-A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    power supply 50w 24v medical

    Abstract: HAF2001 HAF2002 DSA003642
    Text: HAF2002 Silicon N Channel MOS FET Series Power Switching ADE-208-503A Z 2nd. Edition Nov. 1997 Features This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit


    Original     		HAF2002 ADE-208-503A 220FM power supply 50w 24v medical HAF2001 HAF2002 DSA003642 PDF

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent PDF

    HAF2001

    Abstract: HAF2012 Hitachi DSA00240
    Text: HAF2012 L ,HAF2012(S) Silicon N Channel MOS FET Series Power Switching ADE-208-677A (Z) 2nd. Edition July 2000 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down


    Original     		HAF2012 ADE-208-677A Sencin-2100 HAF2001 Hitachi DSA00240 PDF

    HAF2001

    Abstract: HAF2012
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    HAF2001

    Abstract: HAF2002
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: HAF2001 Silicon N-Channel MOS FET Series HITACHI November 1996 Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this ciruit operation to shut­


    OCR Scan     		HAF2001 D-85622 PDF

    Untitled

    Abstract: No abstract text available
    Text: HAF2001 Silicon N-Channel MOS FET Series HITACHI ADE-208-353C 13th. Edition Application Power switching Over temperature shut-down capability Features This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has


    OCR Scan     		HAF2001 ADE-208-353C O-22QAB PDF

    sd2t

    Abstract: No abstract text available
    Text: THERMAL FET HAF2002 Silicon N Channel MOS FET Series Power Switching / Over Temperature Shut-down Capability HITACHI ADE-208-503 1st. Edition Features This FET has the over temperature shut-dow n capability sensing to the junction temperature. This FET has the built-in over temperature shut-dow n circuit in the gate area. And this circuit


    OCR Scan     		HAF2002 ADE-208-503 -220FM HAF2001. sd2t PDF

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44 PDF