rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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fet 547
Abstract: MA644 FA01219A 90 HYBRID 70 mhz rf power acp 100k
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION Unit:mm FA01219A is RF Hybrid IC designed for 0.8GHz band small size handheld radio. GND FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm
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FA01219A
FA01219A
925MHz
fet 547
MA644
90 HYBRID 70 mhz rf power
acp 100k
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S 170 MOSFET TRANSISTOR
Abstract: TB-547 TO247 package
Text: MOTOROLA Order this document by MTW6N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor TO-247 With Isolated Mounting Hole Designer's MTW6N100E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM
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MTW6N100E/D
O-247
MTW6N100E
MTW6N100E/D*
TransistorMTW6N100E/D
S 170 MOSFET TRANSISTOR
TB-547
TO247 package
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mj 1504 transistor
Abstract: transistor mj 1504 TB-547 AN569 MTV6N100E SMD310 surface mount diode 735 motorola make of mj 1504 transistor
Text: MOTOROLA Order this document by MTV6N100E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount Designer's MTV6N100E TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1.5 OHM N–Channel Enhancement–Mode Silicon Gate
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MTV6N100E/D
MTV6N100E
MTV6N100E/D*
mj 1504 transistor
transistor mj 1504
TB-547
AN569
MTV6N100E
SMD310
surface mount diode
735 motorola make
of mj 1504 transistor
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D2504 transistor
Abstract: d636 transistor transistor D450 transistor d525 d1944 d1405 transistor transistor d412 transistor D454 NF 817 NE329S01
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high mobility electrons. Its excellent low
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NE329S01
NE329S01
NE329S01-T1
D2504 transistor
d636 transistor
transistor D450
transistor d525
d1944
d1405 transistor
transistor d412
transistor D454
NF 817
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Untitled
Abstract: No abstract text available
Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: hadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general
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FLC167WF
FLC167WF
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general
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FLC167WF
FLC167WF
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Eudyna Devices
Abstract: FLC167WF
Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general
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FLC167WF
FLC167WF
Sto4888
Eudyna Devices
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FLC167WF
Abstract: No abstract text available
Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general
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FLC167WF
FLC167WF
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FLC167WF
Abstract: flc167
Text: FLC167WF C-Band Power GaAs FET FEATURES • • • • • High Output Power: P1dB = 31.8dBm Typ. High Gain: G1dB = 7.5dB(Typ.) High PAE: ηadd = 35%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC167WF is a power GaAs FET that is designed for general
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FLC167WF
FLC167WF
FCSI0598M200
flc167
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s-parameter s11 s12 s21 10000
Abstract: nec 151 C10535E NE721S01 NE721S01-T1 NE721S01-T1B nec 7912 um 741 AN 17821 audio
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7 dB TYP. @f = 12 GHz PACKAGE DIMENSIONS • Gate Length: Lg = 0.8 µm recessed gate (Unit: mm) • Gate Width: Wg = 330 µm
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NE721S01
NE721S01-T1
NE721S01-T1B
s-parameter s11 s12 s21 10000
nec 151
C10535E
NE721S01
NE721S01-T1
NE721S01-T1B
nec 7912
um 741
AN 17821 audio
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NE24200
Abstract: No abstract text available
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET SPACE QUALIFIED NE24200 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 24 3 GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE24200 is a pseudomorphic Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and
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NE24200
NE24200
24-Hour
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NE32400
Abstract: NE32400M NE32400N
Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32400 FEATURES NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • VERY LOW NOISE FIGURE: NF = 0.6 dB typical at f = 12 GHz GA • LG = 0.25 µm, WG = 200 µm DESCRIPTION The NE32400 is a pseudomorphic Hetero-Junction FET chip
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NE32400
NE32400
24-Hour
NE32400M
NE32400N
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MGF1907
Abstract: MGF1907A mgf1302 MGF1302 equivalent
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1907A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1907A
MGF1907A
MGF1302.
12GHz
30rnA
MGF1907
mgf1302
MGF1302 equivalent
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
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MGF1902B
MGF1902B
MGF13Q2.
12GH2
30rnA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 1 9 0 2 B isa lo w noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band am plifiers and oscillators. The herm etically sealed metalceramic package assures m inim um parasitic losses, and
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MGF1902B
MGF1902B
GF1302.
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NEC Ga FET marking L
Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Text: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm
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NE329S01
NE329S01
NE329S01-T1
NE329S01-T1B
NEC Ga FET marking L
lg TYP 513 309
low noise FET NEC U
SAAI Marking
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9085 d
Abstract: ic fet 547 fet 547 MA644 9415
Text: MITSUBISHI SEMICONDUCTOR GaAs FET FA01219A GaAs FET HYBRID IC DESCRIPTION small size handheld radio. FEATURES • Low voltage 3.5V • High gain 22.5B • High efficiency 50% • High power 30.5dBm APPLICATION PDC 0.8G Hz ABSOLUTE MAXIMUM RATINGS Tc Ratings
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FA01219A
ACP50
ACP100
Po--30
9085 d
ic fet 547
fet 547
MA644
9415
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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FLK202XV
Abstract: No abstract text available
Text: FLK202XV Füjrrsu GaAs FET and HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 32.5dBm Typ. High Gain: G -j^B = 6.0dB(Typ.) High PAE: r iadd = 27% (Typ.) Proven Reliability DESCRIPTION The FLK202XV chip is a pow er GaAs FET that is designed
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FLK202XV
FLK202XV
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TW 6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTW6N100E TMOS E-FET ™ Power Field Effect Transistor T O -2 4 7 W ith Isolated Mounting Hole Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 1000 VOLTS
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6N100E/D
MTW6N100E
340K-01
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TV6N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV6N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 6.0 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
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TV6N100E/D
MTV6N100E/D
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4963 MOSFET
Abstract: 6N diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTV6N100E TMOS E-FET ™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS on = 1-5 OHM N-Channel Enhancement-Mode Silicon Gate The D3PAK package has the capability of housing the largest chip
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0E-05
0E-04
0E-02
0E-01
4963 MOSFET
6N diode
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