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    FDU6N50 Price and Stock

    Rochester Electronics LLC FDU6N50TU

    MOSFET N-CH 500V 6A I-PAK
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    DigiKey FDU6N50TU Bulk 671
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    onsemi FDU6N50TU

    MOSFET N-CH 500V 6A IPAK
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    DigiKey FDU6N50TU Tube
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    Fairchild Semiconductor Corporation FDU6N50TU

    Power Field-Effect Transistor, 6A, 500V, 0.9ohm, N-Channel, MOSFET '
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    Rochester Electronics FDU6N50TU 9,586 1
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    FDU6N50 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDU6N50 Fairchild Semiconductor 500V N-Channel MOSFET Original PDF
    FDU6N50F Fairchild Semiconductor N-Channel MOSFET 500V, 5.5A, 1.15 Ohm Original PDF
    FDU6N50TU Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

    FDU6N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDD6N50F

    Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F FDD6N50FTF FDD6N50FTM FDU6N50FTU failchild 6A04

    FDD6N50

    Abstract: No abstract text available
    Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDD6N50/FDU6N50 FDD6N50

    FDD6N50

    Abstract: No abstract text available
    Text: FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS on = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD6N50 FDU6N50

    FDD6N50TM

    Abstract: FDD6N50
    Text: FDD6N50/ FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 m Features Description • RDS on = 900 m (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.


    Original     		PDF FDD6N50/ FDU6N50 FDU6N50 FDD6N50TM FDD6N50

    FDD6N50

    Abstract: No abstract text available
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDD6N50

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F

    FDD6N50TF

    Abstract: FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU
    Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDD6N50/FDU6N50 FDD6N50TF FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU

    FDD6N50FTM

    Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF
    Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar


    Original     		PDF FDD6N50F FDU6N50F FDU6N50F FDD6N50FTM FDU6N50FTU FDD6N50FTF

    interleaved Boost PFC

    Abstract: RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50
    Text: www.fairchildsemi.com AN-9066 UniFET — Optimized Switch for Discontinuous Current Mode Power Factor Correction Abstract This application note discusses merits of planar technology power MOSFET in discontinuous current mode power factor correction application. In most test conditions it is


    Original     		PDF AN-9066 interleaved Boost PFC RG44 FDA18N50 FDPF5N50FT FDPF12N50FT fdpf16n50t FDA16N50 FDB12N50 FQA16N50 FDD6N50