FDU6N50F Search Results

FDU6N50F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FDU6N50F		Fairchild Semiconductor	N-Channel MOSFET 500V, 5.5A, 1.15 Ohm		Original	PDF

FDU6N50F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FDD6N50F Abstract: FDD6N50FTF FDD6N50FTM FDU6N50F FDU6N50FTU failchild 6A04 Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 1.0Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	PDF	FDD6N50F FDU6N50F FDU6N50F FDD6N50FTF FDD6N50FTM FDU6N50FTU failchild 6A04
FDD6N50 Abstract: No abstract text available Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	PDF	FDD6N50F FDU6N50F FDD6N50
Untitled Abstract: No abstract text available Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar	Original	PDF	FDD6N50F FDU6N50F FDU6N50F
FDD6N50FTM Abstract: FDU6N50F FDU6N50FTU FDD6N50F FDD6N50FTF Text: UniFETTM FDD6N50F / FDU6N50F tm N-Channel MOSFET 500V, 5.5A, 1.15Ω Features Description • RDS on = 0.95Ω ( Typ.)@ VGS = 10V, ID = 2.75A These N-Channel enhancement mode power field effect transistors are produced using Failchild’s proprietary, planar	Original	PDF	FDD6N50F FDU6N50F FDU6N50F FDD6N50FTM FDU6N50FTU FDD6N50FTF