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    FDU6N50TU Price and Stock

    onsemi FDU6N50TU

    MOSFET N-CH 500V 6A IPAK
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    DigiKey FDU6N50TU Tube
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    Rochester Electronics LLC FDU6N50TU

    MOSFET N-CH 500V 6A I-PAK
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    DigiKey FDU6N50TU Bulk 671
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    Fairchild Semiconductor Corporation FDU6N50TU

    Power Field-Effect Transistor, 6A, 500V, 0.9ohm, N-Channel, MOSFET '
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    Rochester Electronics FDU6N50TU 9,586 1
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    FDU6N50TU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDU6N50TU Fairchild Semiconductor 500V N-Channel MOSFET Original PDF

    FDU6N50TU Datasheets Context Search

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    FDD6N50

    Abstract: No abstract text available
    Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDD6N50/FDU6N50 FDD6N50

    FDD6N50

    Abstract: No abstract text available
    Text: FDD6N50 / FDU6N50 N-Channel UniFETTM MOSFET 500 V, 6 A, 900 mΩ Features Description • RDS on = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to


    Original     		PDF FDD6N50 FDU6N50

    FDD6N50TF

    Abstract: FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU
    Text: UniFET TM FDD6N50/FDU6N50 500V N-Channel MOSFET Features Description • 6A, 500V, RDS on = 0.9Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 12.8 nC)


    Original     		PDF FDD6N50/FDU6N50 FDD6N50TF FDD6N50 FDD6N50TM FDU6N50 FDU6N50TU