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    FDR4410 Price and Stock

    Fairchild Semiconductor Corporation FDR4410

    9300 MA, 30 V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET
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    Quest Components FDR4410 919
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.8625
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    ComSIT USA FDR4410 6,000
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    Others FDR4410

    AVAILABLE EU
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    ComSIT USA FDR4410 18,000
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    FDR4410 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDR4410 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDR4410 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDR4410 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF
    FDR4410 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDR4410 Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF

    FDR4410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4410 SO-8

    Abstract: FDR4410 Si4410DY SOIC-16
    Text: April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. 9.3 A, 30 V. RDS ON = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V.


    Original     		PDF FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 4410 SO-8 SOIC-16

    FDR4410

    Abstract: Si4410DY SOIC-16
    Text: May 1997 ADVANCE INFORMATION FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8


    Original     		PDF FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 70oC/W 125oC/W 135oC/W SOIC-16

    4410 SO-8

    Abstract: c125t-a 4410 FDR4410 Si4410DY SOIC-16
    Text: November 1997 PRELIMINARY FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOTTM-8 package is 40% smaller than the SO-8


    Original     		PDF FDR4410 FDR4410 Si4410DY OT-23 OT-223 SOIC-16 4410 SO-8 c125t-a 4410 SOIC-16

    4410 SO-8

    Abstract: FDR4410 Si4410DY SOIC-16
    Text: April 1998 FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. 9.3 A, 30 V. RDS ON = 0.013 Ω @ VGS = 10 V RDS(ON) = 0.020 Ω @ VGS = 4.5 V.


    Original     		PDF FDR4410 FDR4410 Si4410DY OT-23 SOIC-16 OT-223 4410 SO-8 SOIC-16

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original     		PDF 2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


    Original     		PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    LD93

    Abstract: FDR4410 SOIC-16
    Text: A p ril 1 9 9 8 FAIRCHILD M IC Q N D U C T D R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. R d : 0.013 Q. @ VG : 10 V


    OCR Scan     		PDF FDR4410 FDR4410 Si441 OT-23 OT-223 SOIC-16 FDR441 LD93 SOIC-16

    Untitled

    Abstract: No abstract text available
    Text: F A I R C H April 1998 I L D S E M IC O N D U C T O R tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si441 ODY. • 9.3 A, 30 V. RDS 0N = 0.013 £2 @ VGS = 10 V


    OCR Scan     		PDF FDR4410 FDR4410 Si441

    Untitled

    Abstract: No abstract text available
    Text: May 1997 FAIRCHILD S E M IC O N D U C T O R ADVANCE INFORMATION tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular Si4410DY. The SuperSOT -8 package is 40% smaller than the SO-8


    OCR Scan     		PDF FDR4410 Si4410DY

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D APril 1998 SEM ICONDUCTOR tm FDR4410 N-Channel Enhancement Mode Field Effect Transistor General Description Features The FDR4410 has been designed as a smaller, low cost alternative to the popular SÎ4410DY. • 9 .3 A ,3 0 V .R DS ON = 0 .0 1 3 il« V ss = 10V


    OCR Scan     		PDF FDR4410 4410DY. OT-23