F532 Search Results

BF423

Abstract: BF421 bf 421 ic 421 PIN CONFIGURATION BF 200 transistors bf 423 f 423 F532 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

Contextual Info: Tyco / Electronics PolySwitch PTC Devices Raychem Circuit Protection 308 Constitution Drive Menlo Park, CA 94025-1164 Phone: 800-227-4856 Fax: 800-227-4866 PRODUCT: BBRF750 DOCUMENT: SCD 25747 PCN: F53279 REV LETTER: B REV DATE: APRIL 15, 2005 PAGE NO.: 1 OF 1

f5320

Contextual Info: B 3 RADI A L L R585 F53200 TECHNICAL DATA SHEET 5 0 0 TERMINATED 26.5 GHz SMA LATCHING D.P.3.T. Page 1/ 2 SWITCH OPTIONS/SELF CUT-OFF R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE right the products, we reserve ISOLATION 8 -12.4 12.4- 18 18 -26.5 1.20 1.30

Contextual Info: WS1 RADI A L L R585 F53210 TECHNICAL DATA SHEET 5 0 0 TERMINATED 26.5GHz SMA LATCHING D.P.3.T. Page 1/ 2 SWITCH OPTIONS : SELF CUT-OFF R F CHARACTERISTICS FREQUENCY RANGE IMPEDANCE : 0 -26.5GHz : 50 Ohms FREQUENCY GHz V.S.W.R <=] INSERT. LOSS <=) ISOLATION

ic 421

Abstract: F496 BF421 BF423 Q62702-F496 Q62702-F532
Contextual Info: PNP Silicon Transistors With High Reverse Voltage BF 421 BF 423 High breakdown voltage ● Low collector-emitter saturation voltage ● Low capacitance ● Complementary types: BF 420, BF 422 NPN ● 2 3 1 Type Marking Ordering Code BF 421 BF 423 – Q62702-F532

8251a usart interface from z80

Abstract: UDL TM 500 f922 verilog code for 8254 timer l912 256x32 POWER MODULE TM 31 udl 500 78K3 F5S4
Contextual Info: L4E75BS DÜHBÖGb 3ÔÔ B I N E C E CB-C7, 5-VOLT 0.8-M ICRON CELL-BASED CMOS ASIC NEC NEC Electronics Inc. August 1993 Description Figure 1. Integrated HDD Solution with CBC7 Cell-Based ASIC with Embedded 78K3 MPU, Compiled SRAMs and A/D Converters CB-C7 cell-based product family is a 0.8-micron drawn

05H-07H

Contextual Info: F532x SLAS678C – AUGUST 2010 – REVISED NOVEMBER 2011 www.ti.com MIXED SIGNAL MICROCONTROLLER FEATURES 1 • • 2 • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active 290 µA/MHz at 8 MHz, 3 V, Flash Program

Ternary CAM

Abstract: AN-270 PBSRAM
Contextual Info: Preliminary Information IDT75T43100 IP Co-PROCESSOR 32K Entries Features Abstract ◆ The IDT75T43100 is designed to be used in applications that require high speed data searching such as routers, high layer switching and applications involved in the convergence of voice, data and video.

Contextual Info: F5328-EP www.ti.com SLAS954 – DECEMBER 2013 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • 2 • • • • • Low Supply Voltage Range: 3.6 V Down to 1.8 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active 290 µA/MHz at 8 MHz, 3 V, Flash Program

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

F483

Abstract: f422 b0w4 NEC VOLTAGE COMPARATOR IC LIST F-637
Contextual Info: SEC V CMOS-5R 1.2-MICRON CMOS GATE ARRAYS NEC Electronics Inc. PRELIMINARY January 1990 Description Figure 1. Package Photo N EC 's C M O S -5R fa m ily com bines preconfigured static RAM blocks w ith a standard gate array architecture. By integrating m em ory and gate array logic on a single IC, the

transistor f422

Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Contextual Info: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform­

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

Contextual Info: F532x www.ti.com SLAS678 – AUGUST 2010 MIXED SIGNAL MICROCONTROLLER FEATURES • • • • • Low Supply-Voltage Range: 1.8 V to 3.6 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active 290 µA/MHz at 8 MHz, 3.0 V, Flash Program

F199 transistor

Abstract: F46B F17E ST F445 d732 a9ca 34ba 8230C f451 F422
Contextual Info: National Semiconductor Application Note 486 Ashok Krishnamurthy April 1987 INTRODUCTION This report describes the implementation of a Single Precision Floating Point Arithmetic package for the National Semiconductor HPC microcontroller The package is based

c4038

Abstract: w046 cstart.asm 1.53 stk 0177 W832 a006 c4038 transistor f799 DGL-04 W824
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Z654

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FZ800R33KF2C Vorläufige Daten preliminary data IGBT-Wechselrichter / IGBT-inverter Höchstzulässige Werte / maximum rated values $32 %F32 &132214DDDC 32 3F3264C3

w046

Abstract: w058 w078 65801 alba F591 W095 W069 A14352J
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

KNC 201 15

Abstract: KNC 201 35 KNC 201 KNC 201 11 C9014 knc 201 39 c9014 ca 08 C9024 f827 w112r
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

C9014

Abstract: C9024 w849 w745 F312 stk 0177 transistor c9014 a006 DGL-04 C9014 transistor datasheet
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IRF5303

Abstract: irf530 diode IR 132 E FP133 IRF530-3 IR 126 D 34 FP-13 IRF532 F532 FP132
Contextual Info: IRF530/531/532/533 IRFP130/131/132/133 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220 Lower Ros ON Improved inductive ru gg ed ness Fast sw itching tim es Rugged p olysilicon gate cell structure Lower input capacitance Extended safe operating area

papst typ 614

Abstract: ebm-papst 8414 NGH ebm papst RG typ 950 papst DC brushless centrifugal blower dc motor speed control using 5801 microcontroller pwm technique papst variofan 4314 v PAPST 8556 a N4600 ebm-papst 4840
Contextual Info: Compact fans for AC and DC The engineer’s choice version 2011 Trendsetter in fan technology Uncompromising quality made by ebm-papst Among the best. Trendsetting with innovative technologies. Listening to customers’ needs. Developing new ideas to meet requirements and realising them with

STK 2028

Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Contextual Info: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265&#39; 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj

Contextual Info: F5328-EP www.ti.com SLAS954 – DECEMBER 2013 MIXED SIGNAL MICROCONTROLLER FEATURES 1 • 2 • • • • • Low Supply Voltage Range: 3.6 V Down to 1.8 V Ultralow Power Consumption – Active Mode AM : All System Clocks Active 290 µA/MHz at 8 MHz, 3 V, Flash Program