PIN CONFIGURATION 2N2222
Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS
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O-116
2N2222
MPQ2222
MPQ2369
2N2369
MPQ2483
2N2483
MPQ2484
MPQ6502
PIN CONFIGURATION 2N2222
2n2222 pin
PNP 2N3904
2N2222
2N2222 pnp
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Untitled
Abstract: No abstract text available
Text: VP0645 VP0650 0FàSupertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information R d S ON BVoes (max) -450V 30£! -500V 30£i Order Number / Package Si b v dss/ TO-39 TO-92 TO-220 DICE* -0.2A VP0645N2 VP0645N3 VP0645N5 VP0645ND -0.2A VP0650N2
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VP0645
VP0650
-450V
-500V
O-220
VP0645N2
VP0645N3
VP0645N5
VP0645ND
VP0650N2
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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transistor f422
Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Text: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for
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50-MICRON
PD658xx
transistor f422
transistor f423
f422 transistor
transistor f421
BV09
F423
fet 13187
RJ4B
L442
bvoe
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Untitled
Abstract: No abstract text available
Text: E Q IPIOELECinOllES SLOTTED OPTICAL SWITCH QVB SERIES The QVB series of switches is designed to allow th e user SEE NOTE 3 m axim um flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN photo transistor across a .125" 3.18 m m gap. A unique
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SELEC1324
QVB11133
QVB11134
QVB11233
QVB11234
QVB11333
QVB11334
QVB21113
QVB21114
QVB21213
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Untitled
Abstract: No abstract text available
Text: te s SLOTTED OPTICAL SWITCH DPTDELECTROHICS CNY29 J 11 PACKAGE DIMENSIONS SYMBOL r-°T M ILLIM ETER S M IN. t r 3 - i* > r L b’ SECTIO N X - X T IN C H E S MIN. 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 3.0 3.2 .119 .125 .024 .030 a 2 b, D D, d2 e2
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CNY29
ST1326
ST1327
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transistor f422
Abstract: transistor f423 F422 transistor transistor f421 nec product naming rule BK-DK
Text: i O 1993 iir n r, . . NEC E le ctro n ics Inc. Prelim inary Description CMOS-8LCX 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS c ro s s c h e c k te s t s u p p o rt February 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family are ultra-high perform
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iPD658xx
transistor f422
transistor f423
F422 transistor
transistor f421
nec product naming rule
BK-DK
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IR2419
Abstract: No abstract text available
Text: IR2419 6-Unit 400mA Darlington Transistor Array I Description The IR2419 is a 6-drcait driver. The Internal damping diodes enable the IC to drive the inductive load directly. Pin Connections in , Cl _ Features . 1. High output current* I<xn = 400mA MAX.
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IR2419
400mA
IR2419
400mA
14-pin
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136q
Abstract: No abstract text available
Text: SSH5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ - 800V ^DS on = 2.2 Q BVDss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 pA(M ax.) @
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SSH5N80A
136q
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transistor KJJ
Abstract: C-1248 C1243 C1248 C1250 C2079 MCT210 Phototransistor with base emitter CI242 C1256
Text: I5 Q PHOTOTRANSISTOR OPTOCOUPLER IPTOELEtTHIIICS MCT 210 DESCRIPTION PACKAGE DIMENSIONS The MCT210 incorporates a NPN silicon planar phototransistor optically coupled to a gallium arsenide infrared emitting diode. The MCT210 has a specified minimum CTR of 50%, saturated, and 150%, unsaturated.
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MCT210
MCT210
MCT210â
E90700)
C1256
transistor KJJ
C-1248
C1243
C1248
C1250
C2079
Phototransistor with base emitter
CI242
C1256
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Untitled
Abstract: No abstract text available
Text: MAT-04 PMI M ATCH ED MONOLITHIC Q UAD TRANSISTOR P re c isio n M o n o lith ic s Inc PIN CONNECTIONS FEATURES • • • • • • • Low Offset Voltage . 200|xV Max High Current Gain . 400 Min
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MAT-04
100Hz,
14-PIN
AT04AY*
AT04EY
VAT-04.
20Hz-20kHz
110dB
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bv0T
Abstract: 658X
Text: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per
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b4E75S5
QQ3T701
nPD658xx
bv0T
658X
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DTA114TA
Abstract: No abstract text available
Text: h "7 > v DTA114TU/DTA114TK/DTA114TS/DTA114TF DTA114TL/DTA114TA/DTA114TV $ /Transistors D TA 114T U /D T A 1 14 T K /D T A 114TS D TA 114T F /D T A 114T L /D T A 114TA D TA 114TV I y -5VTransistor Switch Digital Transistors Includes Resistors • £tff2 \t"}iG3/D im en sio ns (U n it: mm)
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DTA114TU/DTA114TK/DTA114TS/DTA114TF
DTA114TL/DTA114TA/DTA114TV
114TS
114TA
114TV
DTA114T
DTA114TA
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS 0PB862N51/0PB862N55 Th e O P B 862N series of switches is designed to allow the SEE NOTE 3' user m axim um flexibility in applications. Each switch II consists of an infrared em itting diode facing an NPN 1 s phototransistor across a .125" 3.18 m m gap. A unique
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0PB862N51/0PB862N55
OPB862N51
OPB862N55
OPB862N
74bbflSL
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ild206 application note
Abstract: ILD205 ILD207 D205 SOIC8 ILD206 ILD211 ILD213 RS481A d205 siemens
Text: SIEMENS ILD205/206/207/211/213 DUAL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER FEATURES • Two Channel Coupler • Industry Standard SOIC-8 Surface Mountable Package * Standard Lead Spacing of .05" * Available in Tape and Reel Option Conforms to EIA Standard RS481A
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D205/206/207/211/213
RS481A)
ILD205,
ILD206,
ILD207
ILD211,
ILD213
100ms
ild205/206/207/213
ild206 application note
ILD205
D205 SOIC8
ILD206
ILD211
RS481A
d205 siemens
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Untitled
Abstract: No abstract text available
Text: | FORWARD INTERNATIONAL ELECTRONICS L ID . 2N3906 SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to 2N3904 * Collector-Emitter Voltage: Vceo=-40V * Collector Dissipation; Pc=625 mW Ta=25°C ABSOLUTE MAXIMUM RATINGS at Tamb=25*C
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2N3906
2N3904
-10uA
-100mA
-10mA
-50mA
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Untitled
Abstract: No abstract text available
Text: 8050A SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA M O T O R D R IV E R * Complement to 8550A * Collector C urrent: Ic=1500mA * Collector D issipation: Pc=lW Ta=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*=25°C
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1500mA
100uA
800mA
100mA
800mA
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Untitled
Abstract: No abstract text available
Text: SSW/I2N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 uA M ax. @ VDS= 600V
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SSW/I2N60A
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ITT Voltage Regulator
Abstract: No abstract text available
Text: KSA1614 PNP EPITAXIAL SILICO N TRANSISTOR LOW FREQUENCY POW ER AMPLIFIER POWER REGULATOR • Collector Base Voltage : V cbo = - 80V • Collector Dissipation : Pc=20W TC- 2 5 V ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit V cbo VcBO Symbol -8 0 -5 5
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KSA1614
BVo-55
ITT Voltage Regulator
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ST2009
Abstract: ST2006 H24B1 H24B2 ST2012 ST4004 H24BJ st2014
Text: EXl aPTQELECiaONiCS H24B1 H24B2 DESCRIPTION PACKAGE DIMENSIONS .50 REF D + The H24B series consists of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor. The devices are housed in a low-cost plastic package with lead spacing compatible with a dual in-line package.
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H24B1
H24B2
E51868
ST2006
ST4004
Cto85Â
ST2012
300/ii
ST2013
ST2014
ST2009
ST2006
ST2012
H24BJ
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Untitled
Abstract: No abstract text available
Text: POLYFET R F DEVICES 47E D • 7 a i l D m OOOOGflH ñ ■ PLYF -T-39-01 POLYFET RF DEVICES F1215 PATENTED GOLD METALIZED SILICON RF POWER MOSFET General Description Silicon vertical DMOS designed specifically for RF applications. Immune to forward and reverse
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-T-39-01
F1215
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9C1S
Abstract: No abstract text available
Text: SSW/Ï5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 800V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 MA Max. @ VM = 800V
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5N80A
SSW/I5N80A
9C1S
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transistor f422
Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Text: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high
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xPD658xx
transistor f422
transistor f423
BKDF
f422 transistor
B00J
f422
F423
fet 13187
RJ4B
ru4f
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PDF
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2N3927
Abstract: 2N3926 SD1072 SD1062
Text: H n M T 5 M/ m I# IV IIC rO S e iI P ro g re s s P o w e re d b y T e c h no log y Commerce Drive Montgomeryville, PA 18936Tel: 215 631 -9840 N3926/2N3927 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS • ■ ■ ■ ■ . ■ FREQUENCY
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N3926/2N3927
230MHz
2N3926
2N3927
175MHz
175MHz
SD1062
2N3926
SD1072
2N3927
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