433 MHz RrF module 3 pin 5v
Abstract: processor pentium 1
Text: intei 1. MOBILE PENTIUM Il PROCESSOR AT 233 MHZ AND 266 MHZ INTRODUCTION cache the first 512 Mbytes of memory using a 512Kbyte cache data array composed of PBSRAMs. The private L2 cache bus complements the system bus by providing critical data faster, improving performance,
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64-bit
51ate
66-MHz
100-M
433 MHz RrF module 3 pin 5v
processor pentium 1
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PBSRAM
Abstract: 71V576
Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR-0201-01 DATE: 2/8/02 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Affected: 4M PBSRAM 71V576 Family - refer to attached list of part numbers.
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SR-0201-01
71V576
IDT71V3578
150MHz
IDT71V2578
IDT71V3579
IDT71V2579
71V576Z
166-200Mhz
PBSRAM
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Silicon-Based Technology
Abstract: No abstract text available
Text: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable
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SB61S64K64A
75ns/133MHz
4ns/125MHz
5ns/100MHz
128-pin
SB61S64K64A
304-bit
ad-3-5779832
Silicon-Based Technology
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Untitled
Abstract: No abstract text available
Text: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: Single 3.3V -5% and +10% power supply Fast clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz Two clocked chip enable/one clocked chip disable
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SB61S128K64A
75ns/133MHz
4ns/125MHz
5ns/100MHz
128-pin
SB61S128K64A
608-bit
usin779832
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RAS 1210 SUN HOLD
Abstract: sun hold ras 1210 SiS5571 magnetic switch diagram push botton SiS chipset IRQ1-15 t85 ha6 HA2311 Silicon Integrated System HA25
Text: SiS5571 Pentium PCI/ISA Chipset 1. System Block Diagram PBSRAM CPU Host A ddress Host Data Bus Tag RAM MD Bus Master IDE MA Bus SiS5571 Keyboard DRAM USB PCI Bus ISA Bus ISA Device ISA D ev ice ISA Device Preliminary V2.0 December 9, 1996 ISA Device PCI Device
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SiS5571
75/66/60/50MHz
64-bit
32-bit
RAS 1210 SUN HOLD
sun hold ras 1210
magnetic switch diagram push botton
SiS chipset
IRQ1-15
t85 ha6
HA2311
Silicon Integrated System
HA25
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CY7C1395V25
Abstract: No abstract text available
Text: 395 CY7C1395 CY7C1395V25 PRELIMINARY 2M x36 PBSRAM with NoBL -Burst Architecture Features to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1395V25 operates with a 2.5V power supply and the CY7C1395 operates
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CY7C1395
CY7C1395V25
CY7C1395V25
CY7C1395
CY7C1395/CY7C1395V25
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PBSRAM
Abstract: mosys GW 66 475 ci 94086 MC80364K64 64KX64
Text: MC80364K64 Low Power 3.3V/2.5V MOSYS 64Kx64 PBSRAM • High performance, low power pipeline burst SRAM Ultra low power single chip 512Kbyte Cache for green PC and battery powered PC VSSQ - 39 N/C - 40 MODE - 41 A15 - 42 A14 - 43 A13 - 44 VDD - 45 VSS - 46
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MC80364K64
64Kx64
512Kbyte
PBSRAM
mosys
GW 66 475
ci 94086
MC80364K64
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Untitled
Abstract: No abstract text available
Text: 64K X 32 Fusion Memory SYNCHRONOUS CACHE RAM FEATURES: . performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that
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IDT71F632
100-pin
IDT71F632
I/029
Z31/09
71F632
0023T20
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IDT71F432
Abstract: IDT71F432S66 IDT71F432S75
Text: PRELIMINARY IDT71F432 32K x 32 Fusion Memory SYNCHRONOUS PIPELINED CACHE RAM Integrated Device Technology, Inc. FEATURES: performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with additional features to accommodate the internal DRAM operation
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IDT71F432
71F432
usin14
PK100-1
I/O15
I/O14
I/O13
I/O12
IDT71F432
IDT71F432S66
IDT71F432S75
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VT82C686A
Abstract: 5133S TAG 064 USB audio codec DDC Panel floppy amplifier 352ac NS97338 socket 7 BGA492
Text: 5133S System Block Diagram SOCKET 7 CPGA 321 HA[3.19] 32K*8 TAG RAM CRT LCD HD[0.64] HA[3.19] Panel 64K*64 PBSRAM PCI 1211 PQFP 144 TPS2206 SSOP 16 AD[0.31] Control PCMCIA CONTROLLER TAG[0.7] Control Control CBI 7 MD[0.63] BGA 492 MA[0.13] SDRAM
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5133S
TPS2206
VT82C686A
H8-3434F
NS97338
TAG 064
USB audio codec
DDC Panel
floppy amplifier
352ac
NS97338
socket 7
BGA492
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5133S
Abstract: north bridge
Text: MODEL : 5133S Revision 02A Table of Contents Title Page Cover Sheet 1 Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier
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5133S
north bridge
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SB61S64K64A-4
Abstract: SB61S64K64A-5
Text: SB61S64K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 64Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous ■Fast 3.3V -5% and +10% power supply clock access time: 3.75ns/133MHz , 4ns/125MHz , 5ns/100MHz ■Two clocked chip enable/one clocked chip disable
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SB61S64K64A
75ns/133MHz
4ns/125MHz
5ns/100MHz
128-pin
SB61S64K64A
304-bit
Tel886-3-5777897
Fax886-3-5779832
SB61S64K64A-4
SB61S64K64A-5
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SB61S128K64A-5
Abstract: No abstract text available
Text: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous pipelined-operation 3.3V -5% and +10% power supply ■Internally self-timed WRITE cycle clock access time:
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SB61S128K64A
75ns/133MHz
4ns/125MHz
5ns/100MHz
128-pin
SB61S128K64A
608-bit
usi5779832
Tel886-3-5777897
SB61S128K64A-5
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W22C
Abstract: S12301DS 5133S stp520 t12m256 T12M256A-12J UPC507 MITAC PC515 GP014
Text: MODEL : 5133S Revision 02A Table of Contents page 1 Cover Sheet Block Diagram 2 Central Processor Unit 3 North Bridge Part A & PBSRAM/TAG RAM 4 North Bridge Part B 5 System Memory 6 South Bridge 7 PCMCIA Controller & Socket 8 Audio Codec & Amplifier 9 Enhance IDE & FDD Connector
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5133S
VT82C686A
1000P
2N7002
2N7002
MLL34B
SCK431CSK-1
OT23N
W22C
S12301DS
stp520
t12m256
T12M256A-12J
UPC507
MITAC
PC515
GP014
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non interruptible and burst and memory
Abstract: CY7C1395V25
Text: CY7C1395 CY7C1395V25 PRELIMINARY 2M x 36 PBSRAM with NoBL-Burst Architecture Functional Description • Pin-compatible to ZBT™ and NoBL™ devices • Supports up to166-MHz bus operations with zero wait states — Data is transferred on every clock • Internally self-timed output buffer control to eliminate
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CY7C1395
CY7C1395V25
to166-MHz
166-MHz
133-MHz
100-MHz
CY7C1395/CY7C1395V25
non interruptible and burst and memory
CY7C1395V25
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SiS 651 chipset
Abstract: SiS chipset TI HA04 logic diagram of 74LS245 SIS 651 128m simm 72 pin ide hardisk sis chipset ide pci to isa bridge Silicon Integrated System
Text: SiS5120 Pentium PCI/ISA Chipset 1. Introduction PBSRAM CPU Host Address Host Data Bus Tag RAM MD Bus 244 x 2 optional MA Bus Master IDE DRAM SiS5120 USB GPIO BIOS KBC 245 x2 or x4 PCI Bus ISA Bus ISA Device ISA Device ISA Device ISA Dev ice PCI Device PCI
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SiS5120
SiS 651 chipset
SiS chipset
TI HA04
logic diagram of 74LS245
SIS 651
128m simm 72 pin
ide hardisk
sis chipset ide
pci to isa bridge
Silicon Integrated System
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QDR cypress
Abstract: QDR cypress burst of two Cypress QDR
Text: Quad Data RateTM SRAM QDRTM QDR RAMs and Quad Data Rate comprise a new family of products developed by Cypress Semiconductor, IDT, Inc. and Micron Technology 1 Evolution of Synchronous SRAM • PBSRAMs were designed for use as an L2 cache for processors – Optimized for long bursts of Reads or Writes
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66MHz
200MHz
200MHz
QDR cypress
QDR cypress burst of two
Cypress QDR
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MoSys
Abstract: MC803128K32 pipeline burst
Text: MC803128K32 128Kx32 Pipeline Burst SRAM MOSYS • High performance, low power pipeline burst SRAM Overview The MoSys MC803128K32 is a high performance, low power pipeline-burst-SRAM PBSRAM . Fabricated using an advanced low power, high performance CMOS process, the MoSys MC803128K32 is
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MC803128K32
128Kx32
MC803128K32
32Kx32
64Kx32
32Kx32,
64Kx32,
MoSys
pipeline burst
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Untitled
Abstract: No abstract text available
Text: 32K x 32 Fusion Memory SYNCHRONOUS PIPELINED CACHE RAM FEATURES: performance of SRAM with the cost structure of DRAM. It is fundamentally compatible with standard PBSRAM, with addi tional features to accommodate the internal DRAM operation of the memory. These additional features are defined so that
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100-pin
IDT71F432
IDT71F432
I/024
I/025CZ
I/027
I/02S
I/029
PK100-1
71F432
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Ternary CAM
Abstract: AN-270 PBSRAM
Text: Preliminary Information IDT75T43100 IP Co-PROCESSOR 32K Entries Features Abstract ◆ The IDT75T43100 is designed to be used in applications that require high speed data searching such as routers, high layer switching and applications involved in the convergence of voice, data and video.
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IDT75T43100
IDT75T43100
SREN-01-01)
SREN-01-02)
Ternary CAM
AN-270
PBSRAM
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TA1307P
Abstract: TB62715FN TC7SZ00AFE 017V 8L85
Text: 東芝半導体情報誌アイ 1999 7月号 発行/（株）東芝 セミコンダクター社 電子デバイス営業事業部 営業企画部 TEL. 03-3457-3453 FAX. 03-5444-9431 c mi Se CONTENTS INFORMATION 設計期間を最大で90％以上短縮 マイコンの自動設計システムを米国メンター社と共同開発
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32RISC
TA1307P
25130kHz
TA1307P
TB62715FN
TC7SZ00AFE
017V
8L85
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PDF
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92H-System
Abstract: 640T amd 15h power AMD-645 keyboard controller 1244H 07H-06H AMD k86
Text: AMD-640 TM Chipset BIOS Design Application Note 1997 Advanced Micro Devices, Inc. All rights reserved. Advanced Micro Devices, Inc. "AMD" reserves the right to make changes in its products without notice in order to improve design or performance characteristics.
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AMD-640
84437VX
92H-System
640T
amd 15h power
AMD-645
keyboard controller
1244H
07H-06H
AMD k86
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PDF
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SRAM 6116
Abstract: 5333-02 75P52100 IDT75P52100 ternary content addressable memory ternary
Text: Datasheet Brief 75P52100 IP Co-Processor 64K Entries Block Diagram Device Description IDT’s 75P52100 IPC is a high performance pipelined low-power, synchronous full-ternary 64K x 72 entry device. Each entry location in the IPC has both a Data entry and an associated Mask entry. IDT’s IPC
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75P52100
75P52100
SRAM 6116
5333-02
IDT75P52100
ternary content addressable memory
ternary
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TC55V2377AFF-250
Abstract: tc55v2377 TC55V2377AFF-225 XX11X 1029-CH TC55V2377AFF
Text: TO SH IBA TC55V2377AFF-205,-225,-250 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 36-BIT SYNCHRONOUS PIPELINED BURST STATIC RAM DESCRIPTION The TC55V2377AFF is a 2,359,296-bit synchronous pipelined burst static random access memory SRAM
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TC55V2377AFF-205
TC55V2377AFF
296-bit
LQFP100-P-1420-0
TC55V2377AFF-250
tc55v2377
TC55V2377AFF-225
XX11X
1029-CH
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