Untitled
Abstract: No abstract text available
Text: v. High Current MegaMOS FET IXTK 74N20 VDSS D 25 RDS on N-Channel Enhancement Mode = 200 V = 74 A = 35 mii TO-264 AA ' DGR T, = 2 5°C to 150°C; f^s= 1.0 Mfì es Continuous G SM Transient D 25 200 ±20 ±30 Tc = 25° C Tc = 2 5 °C, pulse width limited byJ TJM
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74N20
O-264
otherw786
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75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
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76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
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f g megamos
Abstract: No abstract text available
Text: F A IR C H IL D w w w .fa irc h ild s e m i.c o m s e m i c o n d u c t o r tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated
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RC5041
200KHz
DS30005041
f g megamos
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intel 865 MOTHERBOARD pcb CIRCUIT diagram
Abstract: 40A Adjustable Power Supply Schematic Diagram Fuji Electric tv schematic diagram megamos PC intel 865 MOTHERBOARD CIRCUIT diagram megamos 13 f g megamos 1000 watt step down converter scheme core i5 MOTHERBOARD CIRCUIT diagram MQ-5
Text: FAIRCHILD www.fairchildsemi.com s e m i c o n d u c t o r tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated
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RC5041
6x86MXâ
200KHz
DS30005041
intel 865 MOTHERBOARD pcb CIRCUIT diagram
40A Adjustable Power Supply Schematic Diagram
Fuji Electric tv schematic diagram
megamos
PC intel 865 MOTHERBOARD CIRCUIT diagram
megamos 13
f g megamos
1000 watt step down converter scheme
core i5 MOTHERBOARD CIRCUIT diagram
MQ-5
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PC xt MOTHERBOARD CIRCUIT diagram
Abstract: zener diode 1N5817 f g megamos
Text: P A IR C H II-D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm RC5041 P r o g r a m m a b l e DC-DC C o n v e r t e r f or P e n t i u m P55C, K6 , and 6 x 8 6 M X ™ M 2 P r o c e s s o r s • Programmable output from 2.1V to 3.5V using integrated
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RC5041
200KHz
DS30005041
PC xt MOTHERBOARD CIRCUIT diagram
zener diode 1N5817
f g megamos
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PDF
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Untitled
Abstract: No abstract text available
Text: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR
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IXTN79N20
OT-227
4bfib22b
DQ02201
79N20
4bflb22b
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BSC 031 N 06 NS 3
Abstract: 21N50 ixth21n50 IXTM21N50
Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450
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IXTH21N45
IXTH21N50
IXTM21N45
IXTM21N50
IXTH21N50,
BSC 031 N 06 NS 3
21N50
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IXTN15N100
Abstract: f g megamos 15N100
Text: MegaMOS FET IXTN15N100 V DSS ^D25 P DS on = 1000 V = 15 A = 0 .6 Q N-Channel Enhancement Mode ?D G r Ks OS Maximum Ratings Symbol Test Conditions V OSB Tj = 25°C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 10 kQ 1000 V v GS Continuous +20 V V GSM
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IXTN15N100
OT-227
4bflb22b
Q00221D
f g megamos
15N100
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a 1712 mosfet
Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous
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IXTH67N08
IXTH67N10
IXTM67N08
IXTM67N10
IXTH67N10,
a 1712 mosfet
ID 48 Megamos
K 1120
megamos 46 08 09 6
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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diode T88
Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Text: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30
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IXTN79N20
OT-227
diode T88
f g megamos
ixys ixtn 79n20
megamos
megamos 13
LD25
ixtn 79n20
79N20
425al
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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36N50
Abstract: IXYS 36N50 IXTN 36N50 C ixys ixtn 36n50 193H IXTN36N50
Text: MegaMOS FRED IXTN36N50 VDSS = 500 V •□25 = 3 6 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions v ¥ d ss Tj = 25°C to 150°C 500 V V och Tj = 25°C to 150°C; RGS = 10 k£2 500 V V GS Continuous +20 V v T ransient ±30 V 36
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IXTN36N50
OT-227
36N50
IXYS 36N50
IXTN 36N50 C
ixys ixtn 36n50
193H
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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IXTN79N20
Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Text: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM
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IXTN79N20
OT-227
ixys ixtn 79n20
sra 2201
79N20
4bob
ixtn 79n20
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36N50
Abstract: IXTN 36N50 C N36N50 ixys ixtn 36n50 IXTN36N50
Text: MegaMOS FRED IXTN36N50 V DSS = 500 V lD26 = 36 A ^ D S o n = 0 -1 2 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS Tj = 25°C to 150°C V Tj = 25°C to 150°C; RGS = 10 500 V 500 V Continuous +20 V T ransient ±30 V ^□25 Tc = 25°C
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IXTN36N50
OT-227
36N50
36N50
IXTN 36N50 C
N36N50
ixys ixtn 36n50
IXTN36N50
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1SN10
Abstract: No abstract text available
Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs
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IXTN15N100
OT-227
E1S3432
C2-98
15N100
C2-99
1SN10
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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17N55
Abstract: MOSFET 17N60 17N60 IXTM17N55 IXTH17N60
Text: IDE I X Y S CORP D I 4t>ôt>22t, 0 0 00 3M b I r - 5 ? - / r MegaMOS'“ FETs n ix Y S IXTH17N60, 55 IXTM17N60, 55 MAXIMUM RATINGS Sym. IXTH17N55 IXTM17N55 IXTH17N60 IXTM17N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rg s = 1-OMfl) (1)
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IXTH17N55
IXTM17N55
IXTH17N60
IXTM17N60
O-204
O-247
IXTH17N60,
IXTM17N60,
17N55
MOSFET 17N60
17N60
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19n50
Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Text: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)
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IXTH19N45
IXTH19N50
IXTM19N45
IXTM19N50
000035b
19n50
megamos 48
a 1712 mosfet
lhi 778
megamos
N-channel MOSFET 800v to-247
LHi 978
megamos 13
H100
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40n50
Abstract: 40n60 equivalent megamos 48 40n60 40N50A megamos IXGM40N60A ID 48 Megamos f g megamos IXGH40N60
Text: 46Ö6226 I X Y S CORP 9iP 00093 D T ~ PE I Llbflfc.5 5 h"'DD0 b a [i3""T I X Y S CORP R MegaMOS IGTs IXGH, IXGM N-Channel Very High Power Conductivity Modulated MOSIGTs PRELIMINARY INFORMATION FEATURES • • • • Very high current capability— 75
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50kHz
40n50
40n60 equivalent
megamos 48
40n60
40N50A
megamos
IXGM40N60A
ID 48 Megamos
f g megamos
IXGH40N60
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ixys ixtn 79n20
Abstract: IXTN max4458 IXTN79N20
Text: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous
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79N20
to150
OT-227
C2-16
79N20
C2-17
ixys ixtn 79n20
IXTN
max4458
IXTN79N20
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PDF
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MOSFET 11N80 Data sheet
Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Text: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250
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Original
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O-247
O-220
O-263
O-264
67N10
75N10
50N20
C2-10
C2-18
C2-20
MOSFET 11N80 Data sheet
MOSFET 11N80
6N80
IXTN 36N50 C
11n80
ixys ixtn 79n20
ixys ixtn 36n50
6n90
12n100
IRFP 640
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