IXTM42N20 Search Results

IXTM42N20 Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTM42N20	IXYS	MegaMOS FET	Scan	PDF
IXTM42N20	IXYS	MegaMOS Power MOSFETs	Scan	PDF
IXTM42N20	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IXTM42N20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
42n20 Abstract: 50n20 to-204ae ups 017 isolated nm 232 Text: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	IXTH/IXTM42N20 IXTH/IXTM50N20 O-247 42N20 50N20 O-204 O-204 O-247 42n20 50n20 to-204ae ups 017 isolated nm 232
42N15 Abstract: 079A 42N20 Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous	OCR Scan	PDF	D00D3b4 IXTH42N20, IXTM42N20, IXTH42N15 IXTM42N15 IXTH42N20 IXTM42N20 O-204 O-247 50-200V, 42N15 079A 42N20
50N20 Abstract: 42N20 IXTH42N20 Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200	OCR Scan	PDF	IXTH/IXTM42N20 IXTH/IXTM50N20 42N20 50N20 O-204 O-247 O-247 O-204 IXTH42N20

Catalog Datasheet

MFG & Type

PDF

Document Tags

42n20

Abstract: 50n20 to-204ae ups 017 isolated nm 232
Text: VDSS MegaMOSTMFET IXTH/IXTM42N20 IXTH/IXTM50N20 200 V 200 V ID25 RDS on 42 A 60 mΩ Ω Ω 50 A 45 mΩ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

Original

PDF

IXTH/IXTM42N20 IXTH/IXTM50N20 O-247 42N20 50N20 O-204 O-204 O-247 42n20 50n20 to-204ae ups 017 isolated nm 232

42N15

Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous

OCR Scan

PDF

D00D3b4 IXTH42N20, IXTM42N20, IXTH42N15 IXTM42N15 IXTH42N20 IXTM42N20 O-204 O-247 50-200V, 42N15 079A 42N20

50N20

Abstract: 42N20 IXTH42N20
Text: J □ IXYS MegaMOS FET IXTH/IXTM42N20 IXTH/IXTM50N20 p V DSS ^D25 200 V 200 V 42 A 50 A DS on 60 mQ 45 mQ N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS T j = 25 °C to 150°C 200 V VDGR T j = 25 °C to 150°C; Ras = 1 M£2 200