Untitled
Abstract: No abstract text available
Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C
|
OCR Scan
|
11N80
13N80
11N80
13N80
O-204
O-247
IXTM13N80
|
PDF
|
11n80
Abstract: No abstract text available
Text: p V DSS IXTH/IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOS FET ^D25 DS on 11 A 0.95 Î2 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V 'o s s Tj = 25°C to 150°C 800 V V«, Tj = 25°C to 150°C ; Ras = 1 M£i 800 V VGS
|
OCR Scan
|
11N80
13N80
O-247
O-204
C2-67
|
PDF
|
MOSFET 11N80
Abstract: 11N80 MOSFET 14n80 ns800 13n80
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C
|
OCR Scan
|
11N80
13N80
14N80
15N80
MOSFET 11N80
MOSFET 14n80
ns800
|
PDF
|
11n80
Abstract: 13N80 TEST14 D-68623
Text: VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V MegaMOSTMFET I D25 RDS on 11 A 0.95 Ω 13 A 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 800 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V V GS
|
Original
|
11N80
13N80
O-247
11N80
13N80
O-204
O-204
TEST14
D-68623
|
PDF
|
MOSFET 11N80
Abstract: 11n80 MOSFET 15N80 MOSFET 13N80 13n80 MOSFET 11N80 Data sheet 14N80 15N80 D-68623 N-Channel MOSFETs
Text: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 HiPerFET Power MOSFET TM IXFH/IXFM 11N80 IXFH/IXFM 13N80 IXFH/IXFM 14N80 IXFH/IXFM 15N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
|
Original
|
11N80
13N80
14N80
15N80
MOSFET 11N80
11n80
MOSFET 15N80
MOSFET 13N80
13n80
MOSFET 11N80 Data sheet
14N80
15N80
D-68623
N-Channel MOSFETs
|
PDF
|
11N80
Abstract: 13N80 IXFH13N80
Text: HiPerFETTM Power MOSFETs IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 800 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 11N80 13N80 11 13
|
Original
|
11N80
13N80
11N80
13N80
IXFH13N80
|
PDF
|
11n80
Abstract: No abstract text available
Text: HiPerFET Power MOSFETs ixfh/ixfm 11 nso IXFH/IXFM13 N80 Symbol Test Conditions VOSS Tj = 25°C to 150°C Maximum Ratings 800 V Voan Tj = 25°C to 150°C; R as = 1 MQ 800 V VGS V QSM Continuous T ransient ±20 ±30 V V U Tc -. 25 :,C 11N80 13N80 11 13 A
|
OCR Scan
|
IXFH/IXFM13
11N80
13N80
13N80
O-247
|
PDF
|
11n80c3
Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247
|
Original
|
SPW11N80C3
P-TO247
Q67040-S4440
11N80C3
11n80c3
Q67040-S4440
11n80c
SPW11N80C3
80011a
11n80
|
PDF
|
11n80c3
Abstract: SPA11N80C3
Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
SPP11N80C3
SPA11N80C3
PG-TO220-3-31
PG-TO220
P-TO220-3-31
PG-TO-220-3-31:
Q67040-S4438
11N80C3
11n80c3
SPA11N80C3
|
PDF
|
SPA11N80C3
Abstract: No abstract text available
Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated
|
Original
|
SPA11N80C3
P-TO220-3-31
11N80C3
P-TO220-3-31
Q67040-S4439
SPA11N80C3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 11 N80 IXFH/IXFM 13 N80 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 800 V VGS VGSM Continuous Transient
|
Original
|
11N80
13N80
|
PDF
|
11n80c3
Abstract: No abstract text available
Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
|
Original
|
SPA11N80C3
PG-TO220-3
11N80C3
11n80c3
|
PDF
|
mosfet 4400
Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,
|
OCR Scan
|
100N10
90N20
73N30
44N50
48N50
36N60
67N10
75N10
42N20
50N20
mosfet 4400
MOSFET 11N80
mosfet 20n60
7n80
20N60 mosfet
4800 mosfet
mosfet 4800 circuit
4500 MOS
|
PDF
|
11N80C3
Abstract: No abstract text available
Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31
|
Original
|
SPP11N80C3
SPA11N80C3
P-TO220-3-31
P-TO220-3-1
Q67040-S4438
11N80C3
11N80C3
|
PDF
|
|
|
75N1
Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH
|
OCR Scan
|
76N07-11
76N07-12
67N10
75N10
42N20
50N20
58N20
O-247
O-204
75N1
6n80
IXTM20N60
IRFP 260 M
ixfh
K 15N60
ixtn 44N50
KS 4400
204 3B
|
PDF
|
40n80
Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18
|
OCR Scan
|
5-10A
52-14N01
52-16N01
55-12N
55-14N07
55-18N
60-08N
60-16N
62-08N
62-12N
40n80
13NB0
60N60
dsei 20-12
33N120
VUO 35-12 N 0 7
DS117-12A
DS117-12
26n60
4410PI
|
PDF
|
ixys ixfn 55n50
Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01
|
OCR Scan
|
O-247
O-247
T0-204
O-264
O-264
76N06-11
75N06-12
110N06
76N07-11
76N07-12
ixys ixfn 55n50
170n10
C1106
IXFH26N50
c1124
IXFN170N10
c1120
15N100
76N06
IXFN36n60
|
PDF
|
MOSFET 11N80c3
Abstract: 11N80
Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
|
Original
|
SPA11N80C3
PG-TO220-3
11N80C3
MOSFET 11N80c3
11N80
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package
|
Original
|
SPW11N80C3
P-TO247
Q67040-S4440
11N80C3
|
PDF
|
11N80C3
Abstract: 11n80c
Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances
|
Original
|
SPP11N80C3
SPA11N80C3
P-TO220-3-31
P-TO-220-3-31:
P-TO220-3-1
Q67040-S4438
11N80C3
11n80c
|
PDF
|
Q67040-S4440
Abstract: 11N80C3 11N8
Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking
|
Original
|
SPW11N80C3
P-TO247
Q67040-S4440
11N80C3
Q67040-S4440
11N80C3
11N8
|
PDF
|
C1162
Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)
|
Original
|
O-247
PLUS247
ISOPLUS247TM
O-204
O-268
O-264
76N06-11
76N06-12
80N06
180N06
C1162
C1280
26n60
60N25
C1328
120N20
C1146
C1104
C1158
|
PDF
|
11n80c3
Abstract: No abstract text available
Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications
|
Original
|
SPA11N80C3
PG-TO220-3
11N80C3
11n80c3
|
PDF
|
0-80V
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 13N80 IXTM 13N80 VDSS = 800 V = 13 A ID25 RDS on = 0.80 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20 V VGSM Transient
|
Original
|
13N80
13N80
O-247
O-204
O-204
O-247
100ms
0-80V
|
PDF
|
