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ITT Interconnect Solutions TWEEZER ANGLE EXTRACTION TOOL (META- Bulk (Alt: TWEEZER ANGLE EXTRACTION TOOL (META) |
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ITT Interconnect Solutions POWER CONTACT EXTRACTION TOOL- Bulk (Alt: POWER CONTACT EXTRACTION TOOL) |
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POWER CONTACT EXTRACTION TOOL | Bulk | 10 Weeks | 1 |
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POWER CONTACT EXTRACTION TOOL | 10 Weeks | 1 |
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ITT Interconnect Solutions EXTRACTION TIP- Bulk (Alt: EXTRACTION TIP) |
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EXTRACTION TIP | Bulk | 13 Weeks | 25 |
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EXTRACTION TIP | 15 Weeks | 25 |
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ITT Interconnect Solutions CET-70335 EXTRACTI0N T00L- Bulk (Alt: CET-70335 EXTRACTI0N T00L) |
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CET-70335 EXTRACTI0N T00L | Bulk | 111 Weeks | 3 |
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CET-70335 EXTRACTI0N T00L | Bulk | 3 |
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ITT Interconnect Solutions TIP CET-4-8 EXTRACTION- Bulk (Alt: TIP CET-4-8 EXTRACTION) |
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TIP CET-4-8 EXTRACTION | Bulk | 32 Weeks | 75 |
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TIP CET-4-8 EXTRACTION | Bulk | 75 |
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EXTRACT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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25275Contextual Info: TE X A S IN S T R { L I N / I N T F O T s D Ê| 0033=127 TELECOM CIRCUITS r 3 T-75-11-37 TCM2101/2 PCM REPEATER DECEMBER 1982 Features GND M • • • • • • • PCM Signal amplification Two ALBO taps High Q or Low Q clock extraction Decision time adjustment |
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T-75-11-37 TCM2101/2 ALB01 ALB02 25275 | |
Contextual Info: SPICE Device Model SiR770DP www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR770DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si3453DV 11-Mar-11 | |
sir882aContextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR882ADP 11-Mar-11 sir882a | |
S12-1319Contextual Info: SPICE Device Model Si7820DN www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7820DN 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1319 | |
Si7625DN
Abstract: mosfet 4430 si7625 S10-2503
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Si7625DN S10-2503-Rev. 01-Nov-10 mosfet 4430 si7625 S10-2503 | |
Contextual Info: SPICE Device Model SiZ730DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiZ730DT 11-Mar-11 | |
Contextual Info: SPICE Device Model SiZ790DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiZ790DT 11-Mar-11 | |
Contextual Info: SPICE Device Model Si1012CR www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si1012CR 11-Mar-11 | |
s1124Contextual Info: SPICE Device Model Si5999EDU www.vishay.com Vishay Siliconix Dual P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the |
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Si5999EDU 11-Mar-11 s1124 | |
Contextual Info: SPICE Device Model SiS698DN www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiS698DN 11-Mar-11 | |
62630Contextual Info: SPICE Device Model SiA920DJ www.vishay.com Vishay Siliconix Dual N-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiA920DJ 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 62630 | |
SIR876Contextual Info: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR876ADP 11-Mar-11 SIR876 | |
CN084-680-1332-1110-0Contextual Info: AdvancedMC Connectors Series CN084 MCH Plug - MicroTCA Carrier Hub Features Part Number (Details) - Reduced insertion / extraction force - Different standard combination types - Flexible for customised versions - High speed design up to 12.5 Gbps - Up to 680 pins |
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CN084 CN084 CN084-680-1232-1010-0 CN084-680-1332-1110-0 CN084-340-0032-0010-0 CN084-340-1200-1000-0 CN084-340-1300-1PCB CN084-680-1332-1110-0 | |
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M24308
Abstract: MIL-C-24308 BS9523 he508 MilC-24308 DAM-15P 3-14 AWG wire 1mm DBM25P F0013 M24308_24_5
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MIL-C-24308 BS9523 F0013 MIL-C24308 538-M24308/2-1 M24308/2-1 M24308 he508 MilC-24308 DAM-15P 3-14 AWG wire 1mm DBM25P M24308_24_5 | |
E135Contextual Info: Extract from the online catalog IMCV 1,5/10-G-3,81 Order No.: 1875506 The figure shows a 16-pos. version of the product Header, Nominal current: 8 A, Rated voltage III/2 : 160 V, Number of |
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5/10-G-3 16-pos. CC-2009) data27350 E135 | |
E112Contextual Info: Extract from the online catalog GMSTBA 2,5/ 2-G-7,62 Order No.: 1766233 The figure shows a 10-position version of the product Header, Nominal current: 12 A, Rated voltage III/2 : 630 V, Number of |
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10-position CC-2009) E112 | |
Contextual Info: Extract from the online catalog MSTB 2,5/ 7-STF-5,08 Order No.: 1778030 The figure shows a 10-position version of the product Plug component, Nominal current: 12 A, Rated voltage III/2 : 320 V, |
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10-position CC-2009) | |
A040
Abstract: phoenix contact HESI
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CL-2009) 2000MM A040 phoenix contact HESI | |
Contextual Info: Extract from the online catalog MKDSD 1,5/ 4-3,81 Order No.: 1705566 The figure shows a 10-position version of the product PC terminal block, Nominal current: 8 A, Nom. voltage: 320 V, |
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10-position CC-2005) | |
E104Contextual Info: Extract from the online catalog MCC 1/ 2-STZF-3,81 Order No.: 1852367 The illustration shows a 16-position version Plug component, Nominal current: 8 A, Rated voltage III/2 : 160 V, |
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16-position E104 | |
B251Contextual Info: Extract from the online catalog A 1,5 -10 Order No.: 3200276 The figure shows variant A 1-6 Ferrule, Length: 10 mm, Color: silver Product notes WEEE/RoHS-compliant since: 01/01/2005 |
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CL-2009) B251 | |
Contextual Info: Extract from the online catalog ME MAX 45 MT 2-2 KMGY Order No.: 2199647 Product notes WEEE/RoHS-compliant since: 08/18/2008 Commercial data GTIN EAN 4 046356 Note Made-to-order |
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Contextual Info: Extract from the online catalog MKDS 1/15-3,5 Order No.: 1751374 The figure shows a 10-position version of the product PC terminal block, Nominal current: 10 A, Nom. voltage: 200 V, |
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10-position CC-2009) |