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Vishay Siliconix SI3453DV-T1-GE3 MOSFET P-CHANNEL 30V 3.4A 6TSOP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI3453DV-T1-GE3	Cut Tape	1,935		1	1 $0.41 10 $0.318 100 $0.1659 1000 $0.1302 10000 $0.1302	Buy Now
	SI3453DV-T1-GE3	Digi-Reel	1,935		1	1 $0.41 10 $0.318 100 $0.1659 1000 $0.1302 10000 $0.1302	Buy Now
Vishay Intertechnologies SI3453DV-T1-GE3 P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3453DV-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI3453DV-T1-GE3	Reel		15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.07811	Buy Now
Mouser Electronics	SI3453DV-T1-GE3		8,223			1 $0.39 10 $0.309 100 $0.158 1000 $0.124 10000 $0.082	Buy Now
Verical	SI3453DV-T1-GE3		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.0932	Buy Now
Arrow Electronics	SI3453DV-T1-GE3		3,000	63 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.097	Buy Now
TTI	SI3453DV-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.082	Buy Now

EBV Elektronik	SI3453DV-T1-GE3			16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SI3453DV Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI3453DV-T1-GE3		Vishay Siliconix	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 3.4A 6TSOP		Original	PDF

SI3453DV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si3453DV 11-Mar-11	PDF
Contextual Info: New Product Si3453DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) Max. ID (A)a 0.165 at VGS = - 10 V - 3.4 0.276 at VGS = - 4.5 V - 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si3453DV 2002/95/EC Si3453DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: New Product Si3453DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) Max. ID (A)a 0.165 at VGS = - 10 V - 3.4 0.276 at VGS = - 4.5 V - 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si3453DV 2002/95/EC Si3453DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI3453DV Contextual Info: New Product Si3453DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) Max. ID (A)a 0.165 at VGS = - 10 V - 3.4 0.276 at VGS = - 4.5 V - 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si3453DV 2002/95/EC Si3453DV-T1-GE3 11-Mar-11	PDF
Contextual Info: SPICE Device Model Si3453DV www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	Si3453DV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF