SIR882ADP Search Results

sir882a

Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: SPICE Device Model SiR882ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

SiR882ADP

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

SiR882ADP

Abstract: MV 1662
Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 VDS (V) 100 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

sir882adp

Contextual Info: New Product SiR882ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0087 at VGS = 10 V 60 0.0094 at VGS = 7.5 V 60 0.0115 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 19.5 nC • Compliant to RoHS Directive 2002/95/EC

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: designfeature SANJAY HAVANUR, Senior Manager, System Applications Vishay Siliconix, Santa Clara, CA Optimum Dead Time Selection in ZVS Topologies Insufficient dead time during turn off can result in the loss of ZVS, poor efficiency, and in the worst case, failure of the

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

Contextual Info: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN845 Matching System Dead Time to MOSFET Parameters in ZVS Circuits by Sanjay Havanur Medium- and high-voltage power MOSFETs are used in a variety of isolated converter topologies, such as half- or full-bridges