Untitled
Abstract: No abstract text available
Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,
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FJBE2150D
FDC655
FJBE2150D
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WD42c
Abstract: WD42C22 WD-33C93
Text: INTRODUCTION 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION WD33C95A AND WD33C96A The W D33C95A and W D33C96A are known as an Enhanced SCSI Bus C ontroller ESBC . The W D33C96A is a 100-pin device that acts as a single-ended SCSI controller, and the W D33C95A is a 132-pin device that acts as both
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WD33C95A
WD33C96A
80C196,
80C188
80C186.
WD42c
WD42C22
WD-33C93
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Untitled
Abstract: No abstract text available
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
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j1510a
Abstract: FJAFS1510A
Text: FJAFS1510A ESBC Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes ESBC™ • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power
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FJAFS1510A
j1510a
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Untitled
Abstract: No abstract text available
Text: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when
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FJP2145
FDC655
FJP2145
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fairchild power bjt
Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver
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FJP2160D
fairchild power bjt
fdc6551
cascode mosfet switching
ESBC
j2160
J2160D
C 1008 y transistor
input output bjt npn transistor
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Untitled
Abstract: No abstract text available
Text: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition
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FJP2160D
FJP2160D
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J1720
Abstract: smps ic GKJ FDS8817
Text: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when
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FJAFS1720
FDS8817
J1720
smps ic GKJ
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Untitled
Abstract: No abstract text available
Text: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when
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FJPF2145
FDC655
FJPF2145
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Adaptec
Abstract: cpu guidance AIC-33C94 microprocessor architecture programming AIC33C 33c94
Text: R AIC -33C94 Enhanced SCSI Bus Controller Overview The Adaptec AIC-33C94 Enhanced SCSI Bus Controller ESBC is ideal for the needs of today’s peripheral systems. SCSI command automation coupled with custom programmability provides a flexible solution for OEM
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-33C94
AIC-33C94
128-word
Adaptec
cpu guidance
microprocessor architecture programming
AIC33C
33c94
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WD33C93A
Abstract: WD33C93 da 8012 muic 93-SD140E microprocessor ic 501 WD33C95A WD33C96A 80c196 63-BDPL
Text: INTRODUCTION d WESTERN DIGITAL CORP 1.0 INTRODUCTION ' • ♦ ‘ S’ ; ’ In this document, the term ESBC Enhanced SCSI bus controller is used as a term when refer ring to both parts. The ESBC can perform both as an Initiator and target. The data path for this deyice is program*
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WD33C96A
100-pin
WD33C95A
132-pln
16-bits
WD33C95AWD33C96A
4M7/92
WD33C93A
WD33C93
da 8012
muic
93-SD140E
microprocessor ic 501
80c196
63-BDPL
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AIC-33C95A
Abstract: AIC-33C96A bd 96a scsi bus controller
Text: R AIC -33C95A /96A Enhanced Wide SCSI Bus Controllers ESBC Overview For ease of development and flexibility in designing systems that require Wide SCSI, the AIC-33C95A/96A SCSI integrated circuits are two versions of a CMOS VLSI SCSI bus controller, enhanced for high performance. The
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-33C95A
AIC-33C95A/96A
AIC-33C96A
AIC-33C95A
16-bit
bd 96a
scsi bus controller
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ignition driver
Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Text: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies
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FJAFS1510A
FJAFS1510A
ignition driver
fairchild Resonant IC
FJAFS1510ATU
FDC655
HV cascode smps
cascode smps
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c 945 TRANSISTOR equivalent
Abstract: FDC655 fairchild power bjt ignition drivers
Text: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,
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FJBE2150D
FDC655
c 945 TRANSISTOR equivalent
fairchild power bjt
ignition drivers
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FCH76N60
Abstract: No abstract text available
Text: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based
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FCH76N60N
FCH76N60N
218nC)
FCH76N60
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fqt1n80
Abstract: No abstract text available
Text: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQT1N80TF
fqt1n80
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FDA20
Abstract: *20N50F
Text: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDA20N50
FDA20
*20N50F
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Untitled
Abstract: No abstract text available
Text: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has
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FDMA8878
FDMA8878
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FDPF4N60NZ
Abstract: No abstract text available
Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
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FDP4N60NZ
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FDPF4N60NZ
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Untitled
Abstract: No abstract text available
Text: FAN7093_F085 High Current PN Half Bridge December 2011 FAN7093_F085 High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 mΩ at 150 °C 2011 Fairchild Semiconductor Corporation FAN7093_F085 Rev. C1 1 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge
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Untitled
Abstract: No abstract text available
Text: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and
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350mW
DO-35
MIL-STD-202,
DO-35
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Untitled
Abstract: No abstract text available
Text: FGA20S125P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is
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Untitled
Abstract: No abstract text available
Text: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDP070AN06A0
O-220AB
O-263AB
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bluetooth encoder
Abstract: bluetooth video encoder ESBC wifi bluetooth STA028 bluetooth streaming tv PCM encoder audio crossover filter STA027 car audio crossover
Text: SBC encoder/decoder for Bluetooth audio High-performance, low-cost STMicroelectronics’ STA027 simplifies Bluetooth system design by providing a high-quality SBC decompression and compression system. The new chip is based on the same dedicated multimedia
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STA027
STA01x
FLSBC/1104
bluetooth encoder
bluetooth video encoder
ESBC
wifi bluetooth
STA028
bluetooth streaming tv
PCM encoder
audio crossover filter
STA027
car audio crossover
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