ESBC Search Results

Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

WD42c

Abstract: WD42C22 WD-33C93
Contextual Info: INTRODUCTION 1.0 INTRODUCTION 1.1 GENERAL DESCRIPTION WD33C95A AND WD33C96A The W D33C95A and W D33C96A are known as an Enhanced SCSI Bus C ontroller ESBC . The W D33C96A is a 100-pin device that acts as a single-ended SCSI controller, and the W D33C95A is a 132-pin device that acts as both

Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

j1510a

Abstract: FJAFS1510A
Contextual Info: FJAFS1510A ESBC Rated NPN Power Transistor Applications Description • High-Voltage and High-Speed Power Switches • Emitter-Switched Bipolar/MOSFET Cascodes ESBC™ • Smart Meters, Smart Breakers, SMPS, HV Industrial Power Supplies The FJAFS1510A is a low-cost, high-performance power

Contextual Info: FJP2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when

fairchild power bjt

Abstract: fjp2160d fdc6551 cascode mosfet switching ESBC j2160 J2160D C 1008 y transistor input output bjt npn transistor
Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, HV Industrial Power Supplies • Motor Driver and Ignition Driver

Contextual Info: FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description • The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or ignition

J1720

Abstract: smps ic GKJ FDS8817
Contextual Info: FJAFS1720 ESBC Rated NPN Power Transistor ESBC Features FDS8817 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON) 0.304 V 10 A 0.0304 Ω (1) The FJAFS1720 is a low-cost, high-performance power switch designed to provide the best performance when

Contextual Info: FJPF2145 ESBC Rated NPN Power Transistor ESBC Features FDC655 MOSFET • • • • • • • Description VCS(ON) IC Equiv. RCS(ON)(1) 0.21 V 2A 0.105 Ω The FJPF2145 is a low-cost, high-performance power switch designed to provide the best performance when

Adaptec

Abstract: cpu guidance AIC-33C94 microprocessor architecture programming AIC33C 33c94
Contextual Info: R AIC -33C94 Enhanced SCSI Bus Controller Overview The Adaptec AIC-33C94 Enhanced SCSI Bus Controller ESBC is ideal for the needs of today’s peripheral systems. SCSI command automation coupled with custom programmability provides a flexible solution for OEM

WD33C93A

Abstract: WD33C93 da 8012 muic 93-SD140E microprocessor ic 501 WD33C95A WD33C96A 80c196 63-BDPL
Contextual Info: INTRODUCTION d WESTERN DIGITAL CORP 1.0 INTRODUCTION ' • ♦ ‘ S’ ; ’ In this document, the term ESBC Enhanced SCSI bus controller is used as a term when refer­ ring to both parts. The ESBC can perform both as an Initiator and target. The data path for this deyice is program*

AIC-33C95A

Abstract: AIC-33C96A bd 96a scsi bus controller
Contextual Info: R AIC -33C95A /96A Enhanced Wide SCSI Bus Controllers ESBC Overview For ease of development and flexibility in designing systems that require Wide SCSI, the AIC-33C95A/96A SCSI integrated circuits are two versions of a CMOS VLSI SCSI bus controller, enhanced for high performance. The

ignition driver

Abstract: FJAFS1510A fairchild Resonant IC FJAFS1510ATU FDC655 HV cascode smps cascode smps
Contextual Info: FJAFS1510A ESBCTM Rated NPN Power Transistor Applications Description • High Voltage and High Speed Power Switch Application • Emitter-Switched Bipolar/MOSFET Cascode Application ESBCTM • Smart Meter, Smart Breakers, SMPS, HV Industrial Power Supplies

c 945 TRANSISTOR equivalent

Abstract: FDC655 fairchild power bjt ignition drivers
Contextual Info: FJBE2150D ESBC Rated NPN Silicon Transistor Description ESBC Features FDC655 MOSFET VCS(ON) IC Equiv. RCS(ON) 0.131 V 0.5 A 0.261 Ω(1) The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBC™ configuration in applications such as: power supplies, motor drivers,

FCH76N60

Contextual Info: SupreMOS TM FCH76N60N N-Channel MOSFET 600V, 76A, 36mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

fqt1n80

Contextual Info: QFET FQT1N80TF_WS N-Channel MOSFET 800V, 0.2A, 20Ω Features Description • RDS on = 15.5Ω (Typ.)@ VGS = 10V, ID = 0.1A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FDA20

Abstract: *20N50F
Contextual Info: UniFET TM FDA20N50 / FDA20N50_F109 500V N-Channel MOSFET Features Description • 22A, 500V, RDS on = 0.23Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FDMA8878 Single N-Channel Power Trench MOSFET 30 V, 9.0 A, 16 mΩ Features General Description „ Max rDS on = 16 mΩ at VGS = 10 V, ID = 9.0 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has

FDPF4N60NZ

Contextual Info: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar

Contextual Info: FAN7093_F085 High Current PN Half Bridge December 2011 FAN7093_F085 High Current PN Half Bridge Rectifier 47 A, Max path resistance 30.5 mΩ at 150 °C 2011 Fairchild Semiconductor Corporation FAN7093_F085 Rev. C1 1 www.fairchildsemi.com FAN7093_F085 High Current PN Half Bridge

Contextual Info: DB3-DB3TG 350mW Bi-directional Trigger Diodes Features • • • • • • • • • • VBO : 32V Version Low break-over current DO-35 package JEDEC Hermetically sealed glass Compression bonded construction All external surfaces are corrosion resistant and

Contextual Info: FGA20S125P Shorted AnodeTM IGBT Features General Description • High speed switching Using advanced Field Stop Trench and Shorted Anode technology, Fairchild’s Shorted AnodeTM Trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche capability. This device is

Contextual Info: FDB070AN06A0 / FDP070AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 7mΩ Features Applications • r DS ON = 6.1mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 51nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge

bluetooth encoder

Abstract: bluetooth video encoder ESBC wifi bluetooth STA028 bluetooth streaming tv PCM encoder audio crossover filter STA027 car audio crossover
Contextual Info: SBC encoder/decoder for Bluetooth audio High-performance, low-cost STMicroelectronics’ STA027 simplifies Bluetooth system design by providing a high-quality SBC decompression and compression system. The new chip is based on the same dedicated multimedia