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    FDPF4N60NZ

    Abstract: No abstract text available
    Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A Description • Low Gate Charge ( Typ. 8.3nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


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    Abstract: No abstract text available
    Text: UniFET-IITM FDP4N60NZ / FDPF4N60NZ N-Channel MOSFET 600V, 3.8A, 2.5Ω Features • RDS on = 1.9Ω ( Typ.)@ VGS = 10V, ID = 1.9A • Low Gate Charge ( Typ. 8.3nC) • Low Crss ( Typ. 3.7pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability


    Original     		PDF FDP4N60NZ FDPF4N60NZ