Untitled
Abstract: No abstract text available
Text: 【SDRH Series】 EPOX YY EPOX Shielded SMD Power Inductor 3R3 3R3 D F J EPOXY K 3R3 E H •Dimensions Unit: mm Codes A B C max. D ref E ref F ref H J K SDRH0830 8.0±0.3 8.0±0.3 3.0 6.3 2.5 1.2 2.8 10.1 6.1 SDRH0840 8.0±0.3 8.0±0.3 4.0 6.3 2.5 1.2 2.8
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SDRH0830
SDRH0840
SDRH0845
981m/s
20-Jan-2013
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RE232-LF
Abstract: No abstract text available
Text: Tarjeta experimental para DUAL INLINE ICs no en Euro-formato RE232-LF - fibra de vidrio epoxídica FR4 de 1,60 mm, por un lado 35 µm de CU - lado de soldadura estañado en caliente (HAL-leadfree) - Impresión de dotación por el lado de los componentes eléctricos
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RE232-LF
RE232-LF
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Untitled
Abstract: No abstract text available
Text: Tarjeta experimental no en Euro-formato RE230-LF - fibra de vidrio epoxídica FR4 de 1,60 mm, por un lado 35 µm de CU - lado de soldadura estañado en caliente (HAL-leadfree) y revestido con máscara inhibidora de soldadura (1/20") - trama de agujeros 2,54 mm x 2,54 mm
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RE230-LF
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Untitled
Abstract: No abstract text available
Text: Tarjeta experimental no en Euro-formato RE233-LF - fibra de vidrio epoxídica FR4 de 1,60 mm, por dos lados 35 µm de CU (pth) - lado de soldadura estañado en caliente (HASL) - trama de agujeros 2,54 mm x 2,54 mm - 40 x 60 hileras de agujeros - 40 x 58 nodos de soldadura cuadrados de 2,00 mm²
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RE233-LF
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ALCAN
Abstract: No abstract text available
Text: Tarjeta experimental de AF no en Euro-formato RE231-LF - fibra de vidrio epoxídica FR4 de 1,60 mm, por dos lados 35 µm de CU (npth) - lado de soldadura y de componentes estañado en caliente (HAL-leadfree) - trama de agujeros 2,54 mm x 2,54 mm - 40 x 60 hileras de agujeros
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RE231-LF
ALCAN
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EP-5P945-J
Abstract: F71872F ALC880 FSB1066 ICH7 award Flash BIOS ICH7 ICH7 HDA audio chipset Intel ICH7 RTL8110S-32 intel celeron D 3xx
Text: EP-5P945-J Introduction Intel i945P + ICH7 chipset, ATX size FSB1066 / DDR2 667 / 8ch audio / 8 USB2.0 / PCI-E VGA / PCI-E x1 / GbE LAN / 4 SATA II Specification CPU Socket: Socket LGA775 for Intel Celeron D 3xx, Pentium 4 5xx/6xx and single core P4EE up to
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EP-5P945-J
i945P
FSB1066
LGA775
EM64T
64-bit
240-pin
DDR2-400/533/667
256Mb/512Mb/1Gb
EP-5P945-J
F71872F
ALC880
ICH7
award Flash BIOS ICH7
ICH7 HDA audio
chipset Intel ICH7
RTL8110S-32
intel celeron D 3xx
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AV1611
Abstract: AV0611A400 Bush
Text: AV series New! Security pushbutton switches Bushing Ø 16 .629 - latching action ORDER FORMAT Series Bush./act. Function config. AV 1 Contact matl. 1 A Term. type Bush./act. material Sealing 00 06 16 ON OFF Case style K 4 2 8 See ”options” page. SPECIFICATIONS
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250VAC
24VDC
500VDC
250VAC
AV1611A200
472DIA)
708DIA)
AV1611
AV0611A400
Bush
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LAL04NA
Abstract: RD00HHS1-101 transistor t06 DD 127 D TRANSISTOR mosfet HF amplifier RD00HHS1 S 170 MOSFET TRANSISTOR MITSUBISHI RF POWER MOS FET T06 transistor FET 355
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
LAL04NA
RD00HHS1-101
transistor t06
DD 127 D TRANSISTOR
mosfet HF amplifier
S 170 MOSFET TRANSISTOR
MITSUBISHI RF POWER MOS FET
T06 transistor
FET 355
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Untitled
Abstract: No abstract text available
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDB06S60C
PG-TO220-3-45)
D06S60C
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smd diode MARKING F6
Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6
Text: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDB06S60C
PG-TO220-3-45
D06S60C
smd diode MARKING F6
Diode smd f6 schottky
d06s60
SMD F6 DIODE
D06S60C
smd diode F6
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transistor 1765
Abstract: rd100hhf1
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD100HHF1 Silicon MOSFET Power Transistor 30MHz,100W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:
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RD100HHF1
30MHz
30MHz
RD100HHF1
transistor 1765
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Untitled
Abstract: No abstract text available
Text: IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 24 nC IF 10 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior
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IDB10S60C
D10S60C
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MIL-S-7742
Abstract: No abstract text available
Text: I , 2 \ $ -3 Z ¿ / A / E T -2 A \03h0072-000l | | . .3 3 0 D fA •/£»5*£T ✓ Xc .2 95 o!stv,_ r J"N '-t PVA/ » Tyco Dwg 2-1532146-7 JD37XTY& M icro P/N 031-0072-0001 AÆ ! A / / - AJZ .105 ’ 1 JJ ^ EPOX Y CNTEP - J2.Q/ - 0 3) S Æ -A L £ > / $ £ ,
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\03h0072-000l
JD37XTY&
70MPt
MiL-G-4-52Â
MIL-S-7742
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J15-15
Abstract: No abstract text available
Text: Film Capacitors General Purpose, SMD PPS Dielectric General Purpose, Specials SMD - i TECHNOLOGY iti A p p lic a tio n s 1 blocking, coupling , tu n e r app lica tio ns Ap p lic a ti on s c o n s u m e r and industrial. bypass and a nd /o r steep pulses o c c u r
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330nF
330nF
J15-15
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Untitled
Abstract: No abstract text available
Text: DATA D I S P L A Y P R O D U C T S fc>lE D • 5 b 4 4 S 2 0 0 0 0 0 S 7 7 54L * D D P SURFACE-MOUNT LED D ata D isplay Products m -coior • Orange/Green or Red/Green • Ceramic Substrate • Available on 8mm Tape & Reel Electro-Optical Characteristics
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20mAji]
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STK 419 140
Abstract: STK 419 140a LIL94V-C RA07 rover stk 0241 ci pal 007 MFC-L MIL-STD-2021 STK 419
Text: RA S eries i G HT ANGLE TYPE DB LECTRO Inc. ON 3 4 2.54 0.100 5 _ 6 7 8 0.60 (0.0241 10.051) 1.3 (0.224) nnnnnnnrr RA CONSTRUCTION FBI rcn B±0.1=2.54X(P*1) B±0.004=0.100X(P-1) & ® 0O.97±O.OS (0.038+0.002) P.C.B. LAYOUT 1. Terminal plating by gold gives excellent results when
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LIL94V-C
LJL94V-0
STK 419 140
STK 419 140a
RA07
rover
stk 0241
ci pal 007
MFC-L
MIL-STD-2021
STK 419
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250v 1.0 K capacitor
Abstract: 470nF 400v polyester evox pmr series 250v 1,0 K capacitor capacitor 1nF 100v 10 radial capacitor 470nf 63v polyester 100nF film 400V 100nF 63V polyester capacitor capacitor 1nF 100v 10 foil capacitor 100nf 100v polyester
Text: General information Product Sum mary Metallized film capacitors MMK CM K Metallized polyester film capacitor family. Reliable general purpose capacitor outperforming tantalum and high- K ceramics. Metallized polycarbonate capacitor. Low-loss capacitor with wide ope
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100nF
470nF
100pF
250v 1.0 K capacitor
470nF 400v polyester
evox pmr series
250v 1,0 K capacitor
capacitor 1nF 100v 10 radial
capacitor 470nf 63v polyester
100nF film 400V
100nF 63V polyester capacitor
capacitor 1nF 100v 10 foil
capacitor 100nf 100v polyester
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epow
Abstract: No abstract text available
Text: HB 64 HR 64 S - HA 64 S CONDENSATEURS POLYESTER METALLISE METALLIZED POLYESTER CAPACITORS Oiélertriaup CARACTERISTIQUES GENERALES GENERAL CHARACTERISTICS Température d'utilisation Gamme de capacités • HB 64 Tolérances sur capacité Gamme de tensions
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50000M
epow
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Untitled
Abstract: No abstract text available
Text: Type X667 Stocked in Local Distribution New Miniaturized Design Metallized Polyester Capacitors Wrap and Fill Case White Wrapper Tw i 1 .6 2 5 MIN. • Oval Axial Wrap and Fill Construction • Cost Effective • Miniature Size and Light Weight • High Insulation Resistance
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econ45
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LAB 250 LB
Abstract: No abstract text available
Text: FO-52847 -F | 2 | 3 | 4 | 5 | 1 2 , I WITHOUT ß | 7 | 8 | 9 1 REV DOCUMENT A 0 0 0 0 180 10 CHANGED GLH BY CHECK 30APR03 SAV LEAD WIRE 7,25 STRAIGHT . 285 KNURL 2X 4X 0 . 3 3 T H R U 7,29 . 287 H O L E F O R 5 / 16FORMED THREAD NTERNAL NOTES E X P L O S I O N PROOF - U N D E R W R I T E R S LAB INC L I S T I N G
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FO-52847
30APR03
30APR03
LAB 250 LB
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Untitled
Abstract: No abstract text available
Text: THIRD ANGLE PROJECTION | E C Q E 2 1 03 u 2123( // 2 15 3 ( n 21 S 3 ( u 2223( // 2 2 7 3 ( // 2 3 3 3 ( n 2393( // 2 4 7 3 ( u 2563 ( u 2683( // 2 8 2 3 ( n 2104( // 2 1 2 4 ( // 2 1 5 4 ( n 2184( n 2224( // 2 2 7 4 ( n 2334( // 2 3 9 4 ( // 2 4 7 4 ( // 2 5 6 4 (
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250VDC
9000Mfi
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P147T
Abstract: 25Ol
Text: 4 3 2 D R A W I N G M A D E IN T H I R D A N G L E P R O J E C T I O N 1 LOC D IS T ÙF ♦ R E V IS IO N S C o p y r i g h t 19 7 3 by>AM P I n c o r p o r a t e d , H a r r is b u r g , P a , A l l I n t e r n a t io n a l R ig h t s ^ R e s e r v e d , A M P I n c o r p o r a t e d p r o d u c t s
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2N5055
Abstract: 2N551 2N550 2N4248 2N4250 2N4249 2N5378 2N4250A 2N547 2N4389
Text: bl CENTRAL SEM ICO ND UC TOR 2N4389 2N5055 2N5140 2N5141 2N5228 2N5910 - TYPE NO. 2N4248 2N4249 2N4250 2N4250A 2N4964 2N4965 2N5086 2N5087 2N5378 2N5379 Vcb V 40 60 40 70 50 50 60 60 40 40 VCE V eb V V 5 40 60 5 40 5 5 60 5 40 40 5 50 3 3 50 30 5 30 5 hFE
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2N4389
O-106
2N5055
2N5140
T0-106
2N5141
2N5228
2N5910
2N551
2N550
2N4248
2N4250
2N4249
2N5378
2N4250A
2N547
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MS25082-C2
Abstract: 26ET96-R1-G MS25082-c2 hex nut
Text: CATALOG a Honeywe II FED. MFG. CODE SWITCH-TOGGLE MAGNETIC HOLD-IN Division 91929 L I S T I NG 26ET96-R1-G CD I Od 30° ± 4 ° T OT AL T RA V EL / C I RCU I TS 1-3 AND 4 - 6 MADE (ELECTRICALLY MAINTAINED P OS I T I O N ) CD CD CO CM C I R C U I T S I -2 AND 4 - 5 MADE
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26ET96-R1-G
MS27478YI0ES35PA
MS27473TI0B35SA
MS25082-C2
26ET96-R1-G
MS25082-c2 hex nut
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