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D06S60C Datasheets Context Search

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D06S60C Abstract: IDV06S60C Schottky diode TO220 JESD22 d06s60 Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description	Original	IDV06S60C IDVxxS60C O220FullPAK D06S60C IDV06S60C Schottky diode TO220 JESD22 d06s60	PDF
D06S60C Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT06S60C PG-TO220-2-2 IDT06S60C PG-TO220-2-2 D06S60C	PDF
IDT06S60C Abstract: D06S60C Contextual Info: IDT06S60C 2nd generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V Qc 15 nC • No reverse recovery/ No forward recovery I F @ T C < 140°C 6 A • Temperature independent switching behavior I F @ T C < 100°C 9 A • Revolutionary semiconductor material - Silicon Carbide	Original	IDT06S60C PG-TO220-2-2 20mA2) IDT06S60C D06S60C	PDF
D06S60C Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 15 nC IF 6 A • No temperature influence on the switching behavior	Original	IDB06S60C PG-TO263-3-2) D06S60C D06S60C	PDF
D06S60C Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH06S60C PG-TO220-2 D06S60C D06S60C	PDF
D06S60C Abstract: IDT06S60C JESD22 d06s60 Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT06S60C PG-TO220-2-2 D06S60C PG-TO220-2-2: D06S60C IDT06S60C JESD22 d06s60	PDF
D06S60C Abstract: IDH06S60C JESD22 60-06A D06S60 Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH06S60C PG-TO220-2 D06S60C D06S60C IDH06S60C JESD22 60-06A D06S60	PDF
Contextual Info: S iC Silicon Carbide Diode 2 n d G e n e r a t io n t h in Q ! 2nd Generation thinQ!™ SiC Schottky Diode IDV06S60C Data Sheet Rev. 2.0, 2010-01-14 Final In d u s tr ia l & M u l ti m a r k e t 2nd Generation thinQ!™ SiC Schottky Diode 1 IDV06S60C Description	Original	IDV06S60C IDVxxS60C O220FullPAK	PDF
D06S60C Abstract: IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6 Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB06S60C D06S60C D06S60C IDB06S60C JESD22 smd diode MARKING F6 SMD F6 DIODE Diode smd f6	PDF
D06S60C Abstract: Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6 Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB06S60C PG-TO220-3-45) D06S60C D06S60C Diode smd f6 schottky IDB06S60C JESD22 smd diode F6 Diode smd f6 SMD F6 DIODE smd diode MARKING F6	PDF
D06S60C Abstract: d06s60 IDT06S60C JESD22 diode c25 Contextual Info: IDT06S60C 2nd generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDT06S60C PG-TO220-2-2 D06S60C D06S60C d06s60 IDT06S60C JESD22 diode c25	PDF
D06S60C Contextual Info: IDH06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark VDC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDH06S60C IDH06S60C PG-TO220-2 D06S60C	PDF
Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB06S60C PG-TO220-3-45) D06S60C	PDF
smd diode MARKING F6 Abstract: Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6 Contextual Info: IDB06S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 15 nC IF 6 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	IDB06S60C PG-TO220-3-45 D06S60C smd diode MARKING F6 Diode smd f6 schottky d06s60 SMD F6 DIODE D06S60C smd diode F6	PDF