ELM77 Search Results

Contextual Info: ELM77xxxxxC CMOS Dual voltage detector •General description ELM77xxxxxC is CMOS dual voltage detector which consists of two comparator circuits watching Vdetn2 Vdd level and Vdetn1(Vdet input level) simultaneously and independently. This configuration enables output

Contextual Info: ELM77xxxxxC CMOS 双路电压检测器 •概要 ELM77xxxxxC 是蓄电池工作设备用的 CMOS 双路电压检测器。此 IC 与一般的电压检测器不同，内藏 有 2 个电压比较器，同时并独立地监测 Vdetn2 Vdd 电位 和 Vdetn1(Vdet 电位 )。由于这种功能，即使

ELM7785-7PS

Abstract: ELM7785-7PST ELM7785 FET MARKING Device Innovations
Contextual Info: ELM7785-7PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=39.0dBm Typ. High Gain: G1dB=9.5dB (Typ.) High PAE: ηadd=33% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-7PS is a power GaAs FET that is internally matched for

ELM77221A

Abstract: ELM77242A ELM77253A ELM77274A sot-23-5 Marking N2
Contextual Info: ELM77xxxA DUAL VOLTAGE DETECTOR • GENERAL DESCRIPTION ELM77xxxxA Series are dual CMOS voltage detector ICs designed for battery operated devices. ELM77xxxA contains two comparator circuits watching VDD level and VDET input level simultaneously and independently.

Contextual Info: ELM77xxxB CMOS Dual voltage detector •General description ELM77xxxB is CMOS dual voltage detector which consists of two comparator circuits watching Vdd level and Vdet input level simultaneously and independently. With internal power-on control circuit, when Vdd level is

SUMITOMO 1085

Abstract: ELM7785-4PS SUMITOMO 1710
Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: ηadd=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for

Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: hadd=34% (Typ.) Broad Band: 7.7 to 8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for

10f 471

Abstract: ELM7785-10F
Contextual Info: ELM7785-10F C-band Internally Matched FET FEATURES ・High Output Power ： P1dB=40.5dBm typ. ・High Gain ： G1dB=8.5dB(typ.) ・High P.A.E. ： ηadd=37%(typ.) ・Broad Band ： 7.7 - 8.5GHｚ ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package

ELM7785

Contextual Info: ELM7785-16F C-band Internally Matched FET FEATURES High Output Power : P1dB=42.5dBm typ. High Gain : G1dB=8.0dB(typ.) High P.A.E. : ηadd=37%(typ.) Broad Band : 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package DESCRIPTION The ELM7785-16F is a power GaAs FET that is internally

Contextual Info: ELM7785-4PS C-Band Internally Matched FET FEATURES High Output Power: P1dB=36.0dBm Typ. High Gain: G1dB=10.0dB (Typ.) High PAE: add=34% (Typ.) Broad Band: 7.7~8.5GHz Internally matched Plastic Package for SMT applications DESCRIPTION The ELM7785-4PS is a power GaAs FET that is internally matched for

Contextual Info: ELM77xxxxxC CMOS デュアル電圧検出器 •概要 ELM77xxxxxCはバッテリー動作機器用デュアル CMOS電圧検出器です。 本 IC は 一般の電圧検出器と 異なり、 2 個のコンパレータ回路を内蔵し、 Vdetn2 Vdd レベル とVdetn1(Vdetレベル ) を同時かつ独立

ELM5359-60F

Abstract: 501-17 ED-4701 ELM7785-60F
Contextual Info: ELM7785-60F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=48.0dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION

JESD22-A114

Contextual Info: ELM7785-35F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.5dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: hadd=35%(Typ.) ・Broad Band: 7.7～8.5GHz ・Impedance Matched Zin/Zout = 50W ・Hermetically Sealed Package DESCRIPTION

FLL57MK

Abstract: ELM7785-60F FLL400IP2 flc107 FLK027WG FLC057WG fll600iq-2 FLL357 fll177 FLL357ME
Contextual Info: Wireless Devices: GaAs FETs High Power GaAs FETs Sumitomo Electric has developed 40W - 80W high power Push-Pull GaAs FETs for Mobile Base Station applications such as Cellular, WCDMA, LTE and WiMAX. Additionally, plastic packaged devices are under development for cost driven systems.