EDI8M8512LP100P6C Search Results

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Abstract: EDI8M8512C EDI8M8512LP
Contextual Info: ELECTRONIC DESIGNS SIE D INC • 3230114 0001B78 137 ■ E L D EDI8M8512C ^ EDI Btdronk: D«dgns Inc. ■ High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module PiiyMfliMiY Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­

Contextual Info: EDI8M8512C ^ED I Electronic Dttipni inc. High Speed Four Megabit SRAM Module 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic four megabit

Contextual Info: ^ED I EDI8M8512C B «ctonie D«rigns Inc. High Speed Four Megabit SRAM Module ^ E U iO iM Y 512Kx8 Static RAM CMOS, Module Features The EDI8M8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate.