EDI411024C Search Results

RAS 0910

Abstract: EDI411024C EDI411024C100QB EDI411024C100ZB EDI411024C70NB EDI411024C70QB EDI411024C70ZB EDI411024C80NB EDI411024C80QB EDI411024C80ZB
Contextual Info: m EDI411024C x 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS. INC M/legabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and W rite cycles each bit is addressed

a719

Abstract: EDI411024C 150ni 15trc 1MX1
Contextual Info: E LECTRONIC DESIGNS INC m {• c h o n te o 30E D i • 3B30114 0 0 0 0 7 7 ? ö M EDI411024C High Performance Megabit Monolithic DRAM In e . < 1Mx1 Dynamic RAM CMOS, Monolithic y in m Features m T - y 6 -2 3 -1 5 The EDI4110240 is a high performance, low power

EDI411024C

Contextual Info: m o _ EDI411024C i Electronic D*4gn» Ine. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic railLDHflDNAmf Features The ED 1411024C is a high performance, low power CMOS Dynamic RAM organized as 1 Megabit x1. The use of triple-layer polysilicon process, combined with

EDI411024C

Contextual Info: ^ E D _ I Electronic Detlgns Inc. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with

Contextual Info: W 3X EDI411024C m g x 1 Fast Page DRAM ELECTRONIC DESIGNS, INC. IMegabitx 1Dynamic RAM CMOS, Monolithic Tîie EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1Megabit x1. During Read and Write cycles each bit is addressed

Contextual Info: moi _ C Electronic DMlgn» Ine. EDI411024C High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with

RAS 0910

Contextual Info: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC DESIGNS, INC IMegabitx 1 Dynamic RAM CMOS, Monolithic The EDI411204C is a high performance, low power CMOS Features Dynamic RAM organized as 1 Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit CMOS Dynamic

Contextual Info: ^EDI EDI411024C Electronic Detlgns Inc. High Performance Megabit Monolithic DRAM 1Mx1 Dynamic RAM CMOS, Monolithic Features The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The use of triple-layer polysilicon process, combined with

ras 0910

Contextual Info: OCT 2 8 1990 ^ E D I E D I 4 1 1 0 2 4 C Electronic Designs Inc^ High Performance Megabit M onolithic DRAM 1Mx1 Dynam ic RAM P iiU illM M Y Features CMOS, M onolith ic The EDI411024C is a high performance, low power CMOS Dynamic RAM organized as 1Megabit x1. The

RAS 0910

Contextual Info: ^EDI EDI411024C 1Megx1 Fast Page DRAM ELECTRONIC OESIGNSL HC. IMegabitx 1 Dynamic RAM CMOS, Monolithic Features 1Mx1 bit CMOS Dynamic Random Access Memory • Access Times 70 ,80,100ns • 8ms Refresh Rate • Low Operating Power Dissipation • Low Standby Power

Contextual Info: WDÌ DRAM Test Enable Function E lectronic D « «tg n i Inc. EDI411024CXXQB Functional Description The T e s t E nable Function im plem entation on E lectronic D esigns' 1M x 1 dynam ic RAM allow s te st tim e reduction by use o f a parallel test algorithm . By asserting the TE pin, the

Contextual Info: EDI414097C MDi Electronic Dôiign» Inc. • High Performance Four Megabit Monolithic DRAM 4Mx1 Dynamic RAM CMOS, Monolithic Features The EDI414097C is a high performance, low power CMOS Dynamic RAM organized as 4Megabit x1. During Read and Write cycles each bit is addressed

Contextual Info: ^EDI ELECTPOWC MSGNS NC. | INSIDE SECTION 3 . Density 1 Megabit 1 Megabit 1 Megabit 1 Megabit 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 4 Megabits 16 Megabits 16 Megabits 18 Megabits 16 Megabits Organization IM xl IM xl 1Mx1 1Mx1 1Mx4 1Mx4 1Mx4

EDI8M8512L

Contextual Info: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28

511000A

Abstract: m511000aljp-10 M511000A HM511000P-12 511000 21010-10 HM511001-12 18PIN AAA1M100-12 AAA1M200-07
Contextual Info: 201 IM m CMOS X * ít £ c o Á ^ TRAC nax ns TRCY min (ns) TCAD min (ns) TAH min (ns) D y n a m i c R A M (1 0 4 8 5 7 6 x 1 ) m 's 7 ' TP min (ns) TWCY min (ns) TDH min (ns) TRWC V D D or V C C (ns) (V) 1 8 P I N m I DD max (itiA) Â I DD STANDBY ( 1 SB/ I SB2)

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

Contextual Info: ^EDL ED1411024C IMegxl Fast Page DRAM ELECTRONIC CCSGN& NC 1Megabitx1 DynamicRAM CMOS,Monolithic The EDI411204C is a high performance, low power C M O S ¡Features Dynamic RAM organized a s 1Megabit x1. During Read and Write cycles each bit is addressed 1Mx1 bit C M O S Dynamic

EDI44256C

Contextual Info: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs