EDI44256C Search Results

a719

Abstract: EDI44256C DRAM 256kx4
Contextual Info: 23EDI EDI44256C Electronic D e to n a Ine. High Performance Megabit Monolithic DRAM P^EOiDIMIjW 256Kx4 Dynamic RAM CMOS, Monolithic Features The EDI44256C is a high performance, low power CM O S Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

DRAM 256kx4

Contextual Info: ^E D I C Etectronie D«aigna inc. EDI44256C High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic m U N O D N A m r Features The EDI44256C is a high performance, low power C M O S Dynamic RAM organized a s 256Kx4. The use of triple-layer polysilicon process, combined with silicide

transistor a719

Abstract: a719 EDI44256C DRAM 256kx4
Contextual Info: _ EDI44256C m oi E lectronic D e to n a Ine. High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic P^EOiDIMIjW Features The EDI44256C is a high performance, low power CM O S Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

Contextual Info: OCT 2 » 1990 EDI44256C Electronic D atign t In c« High Performance Megabit Monolithic DRAM 256Kx4 Dynamic RAM CMOS, Monolithic Features P R Ë U M 1 ÏM Y The EDI44256C is a high performance, low power CMOS Dynamic RAM organized as 256Kx4. The use of triple-layer polysilicon process, combined with silicide

EDI8M8512L

Contextual Info: ^EDI Packaging Cross Reference Electronic Designs Inc. by Part Number No. Pins 31 40 31 40 26 52 TBD 36 TBD 36 TBD TBD TBD TBD 26 52 26 52 25 28 27 32 25 28 27 32 78 20 16 20/26 1 18 18 20 16 20/26 18 20 16 2026 18 20 16 20/26 4 20 18 20 13 28 76 28 22 28

dram zip 256kx16

Abstract: I8833C
Contextual Info: Electronic Design* Inc. Table of Contents Page Letter from the Table o f Contents . 2

m514256

Abstract: m514256a M514256AP hy51c4256 HY51C4256-10 20PIN AAA1M104-12 AAA1M204-07 AAA1M204-08 EDI44256C-120
Contextual Info: - 211 IM CMOS X D y n a m i c 4 •; * RA M 2 6 21 4 4 x 4 > 7 ft ü m iäSicH m ä tt £ CC) TRAC max (ns) TRCY rain (ns) TCAD min (ns) TAH nin (ns) TP min (ns) TWCY min (ns) TDH min (ns) TRWC min (ns) V D D or V C C (V) 2 0 P I N A m I DD max (mA) I DD STANDBY

64kx4 DRAM

Abstract: SRAM 6T PS-136 4Kx1 DRAM EDI8F8512LP MILITARY 4Kx1 SRAM 5962-89598 EDI8833LP 32kx8 bit low power cmos sram edi84256
Contextual Info: EDI8833C/LP/P ^E D I Electronic Designs Inc. High Speed 256K Monolithic SRAM 32Kx8 Static RAM CMOS, Monolithic u m m Features The EDI8833C/LP/P is a high speed, high perform­ ance, low power, 262,144bit C M O S Static R A M orga­ 32Kx8 bit C M O S Static

synchronous sram

Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Contextual Info: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK

EDI44256C

Contextual Info: ^EDI Dynamic RAM Selector Guide Electronic D u lg n s Inc. The Industry’s Fastest High Density MIL-STD-883, Paragraph 1.2.1 Compliant Dynamic RAMs In response to the need of our military customers for high-performance, M IL-S TD 883 compliant DRAM s, Electronic Designs