E35LD5 Search Results

LA 7612

Abstract: 4727 TLE SO CAY transistor sd 3 phase monitoring IC IED01769 IED01772 IED01780 IED01781 IED01782
Contextual Info: SIEMENS 2 -P hase S tepper-M o tor D river TLE 4727 Overview Bipolar 1C Features • 2 x 0.7 amp. outputs • Integrated driver, control logic and current control chopper • Fast free-wheeling diodes • Max. supply voltage 45 V • Outputs free of crossover current

siemens sab 82538

Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Contextual Info: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each

q1205

Contextual Info: SIEMENS PNP Silicon AF Transistor • • • • BC 369 High current gain High collector current lo w collector-emitter saturation voltage Complementary type: BC 368 NPN Type Marking Ordering Code BC 369 - C62702-C748 Pin Configuration 1 2 3 E C Package1)

m43of

Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Contextual Info: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version

csi 24c02

Abstract: csi 24C01 24C02 csi 24C01 pin configuration 24C01 24c02 eeprom circuit diagram IC 24C02 24001-S
Contextual Info: • 6 E3 SbG 5 □□TflTMD 7 T T ■ SIEM EN S 1/2 K b it 128/256 x 8 b it S e ria l C M O S E E P R O M s, I 2C S y n c h ro n o u s 2 -W ire B u s , P age P ro te c tio n Mode S L x 2 4C 01/02/P Preliminary Features • Data EEPROM internally organized as

Contextual Info: SIEMENS BFP 182W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

Contextual Info: BS 170 I nf ineon la c h n o I og i • s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level 3 VPT05548 • ^GS th = 0-8-2.0V Pin 3 Pin 2 Pin 1 G S Type ^OS b flDS(on) Package Marking BS 170 60 V 0.3 A 5Ü TO-92 BS 170 Type

Contextual Info: SIEMENS Hall Sensor KSY 44 Preliminary Data Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity Specified TC of offset voltage Low inductive zero component