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    DT230H Search Results

    DT230H Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DT230H General Electric Semiconductor Data Book 1971 Scan PDF
    DT230H General Electric Semiconductor Data Handbook 1977 Scan PDF
    DT230H Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    DT230H1 General Electric Semiconductor Data Handbook 1977 Scan PDF
    DT230H1 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    DT230HI General Electric Semiconductor Data Book 1971 Scan PDF
    DT230HI General Electric Semiconductor Data Handbook 1977 Scan PDF

    DT230H Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


    OCR Scan     		PDF

    A114F

    Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
    Text: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —


    OCR Scan     		1N5059 1N4245-49 1N5624-27 DT230 MPR10-15 A14A-P GER4001 M14A-M DT230F A114F A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d PDF

    SS321

    Abstract: SE708 D07 15 SS322 SS337 DT230A HPIXP2350ADT DZ800 MA1703 MA1704
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec) Package


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 D07 15 SS322 SS337 DT230A HPIXP2350ADT PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    GE SC160B triac

    Abstract: SC160B 3kw triac H11AG1 H11AG2 gemov relay 12v 100A C2079 H11AG3 ST2122
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 PACKAGE DIMENSIONS DESCRIPTION The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high current transfer ratio


    OCR Scan     		H11AG1 H11AG2 H11AG3 H11AG C2079 ST2125 D00b225 GE SC160B triac SC160B 3kw triac gemov relay 12v 100A C2079 H11AG3 ST2122 PDF

    ST-2124

    Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device


    OCR Scan     		H11AG1 H11AG2 H11AG3 H11AG ST1603A ST-2124 ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf PDF

    GE SC160B triac

    Abstract: C203B varistor 7k 270 H11AG1 H11AG2 H11AG3 dt230h
    Text: “g e solid state 01 De | 3 0 7 5 0 0 1 0 0 1 ^ 7 0 2 o p t o e le c t r o n ic S p e c if ic a t io n s T-qi-83 Photon Coupled Isolator H11AG1, H11AG2, H11AG3 j-1 . Ga Al As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State H llAG series consists of a gallium arsenide infrared 3


    OCR Scan     		T-qi-83 H11AG1, H11AG2, H11AG3 H11AG1 GE SC160B triac C203B varistor 7k 270 H11AG2 H11AG3 dt230h PDF

    1N148 diode

    Abstract: 2N4256 1N148 H11AG1 H11AG h11ag3 SC160B H11AG2 IC 4093 BE IC 4093
    Text: PHOTOTRANSISTOR OPTOCOUPLERS H11AG1 H11AG2 H11AG3 DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer


    Original     		H11AG1 H11AG2 H11AG3 H11AG E90700 DS300213 1N148 diode 2N4256 1N148 H11AG1 h11ag3 SC160B H11AG2 IC 4093 BE IC 4093 PDF

    A114D

    Abstract: A114F SE708 DT230B DT230F STB-568 GER4007 a114n DZ800 MA1703
    Text: SILICON S IG N A L DIODES 100 M A T Y P E S Continued U BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf @ 25°C Max. M ax. @ V r (V) 30 20 100 Co @ lF(mA) (V) 50 1 .00 30 1.00 Package O utline No. S p e cificatio n Sh eet No. @ OV trr (pif) (nsec)


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 A114D A114F DT230B DT230F STB-568 GER4007 a114n PDF

    D035

    Abstract: DT230A D0-35 D035 package 1N4830 1N4150 1N4450 1N4606 1N4607 1N460B
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Part Number BV @ 1OOü A Min. V 1N4451 40 1N4607 85 Ir @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H D035 DT230A D0-35 D035 package 1N4830 1N4150 PDF

    ST2122

    Abstract: H11AG1 H11AG2 H11AG3 GE-MOV 2N4256 C2079 gemov SC160B
    Text: PHOTOTRANSiSTOR OPTOCOUPLERS DPTDELECTBflKICS ._ H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS •The H11AG series consists of a galiium-aluminumarsenide infrared emitting diode coupled with a silicon photoiransistor in a dual in-tine package. This device


    OCR Scan     		H11AG1 H11AG2 H11AG3 H11AG ST1603 C2079 3VSVocS10V ol2125 ST2122 GE-MOV 2N4256 gemov SC160B PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


    OCR Scan     		PDF

    diode A14A

    Abstract: A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 1N4450 1N4606
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H diode A14A A14A A14P Rectifier A15A diode A115m diode a15a ge a15a 1N4150 PDF

    H11AG1

    Abstract: 1N148 diode 1n148 SC160B 2N4256 H11AG3 IC 4093 H11AG2 datasheet of IC 4093 H11AG
    Text: PHOTOTRANSISTOR OPTOCOUPLERS DESCRIPTION The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current.


    Original     		H11AG H11AG1 E90700 H11AG2 H11AG3 DS300213 H11AG1 1N148 diode 1n148 SC160B 2N4256 H11AG3 IC 4093 H11AG2 datasheet of IC 4093 PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    ST2123

    Abstract: P02M ic cmos 4090 H11AG1 H11AG2
    Text: PHOTOTRANSISTOR OPTOCOUPLERS im m e lm it i H11AG1 H11AG2 H11AG3 TTie H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupted with a silicon phototransistor in a dual in-line package. This device provides the unique feature of high currant transfer ratio


    OCR Scan     		H11AG1 H11AG2 H11AG3 H11AG ST2123 P02M ic cmos 4090 PDF

    D035

    Abstract: Bv 42 transistor STB567 D035 package 1N4150 1N4450 1N4606 1N4607 1N460B DT230C
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 Ir Vf @ 25°C Max. 1 <nA) Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package T»pe Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H D035 Bv 42 transistor STB567 D035 package 1N4150 PDF

    1N4150

    Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H 1N4150 D035 JS-2-65-11 PDF

    TRANSISTOR 2n3901

    Abstract: MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 1N4450 1N4606 1N460B
    Text: SIGNAL DIODES 100 - 200 MA TYPES 200 - 400 MA TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H TRANSISTOR 2n3901 MPD300 mpd200 1N4156 2N2368 2N3973 1N4150 PDF

    in4606

    Abstract: IN4150 1N4606 1N4150 1N4450 1N4607 1N460B D035 DT230C DT230H
    Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES @ Part Number Ir BV 1OOü A Min. V 1N4451 40 1N4607 85 Vf @ 25°C Max. <nA) 1 Max. @ V r (V) (V) @ Ir(mA) Co @ OV (pf) trr Package T»pe (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.


    OCR Scan     		100/iA 1N4150* 1N4450 1N4606 100/tA 1N445I 1N4607 1N460B DT230C DT230H in4606 IN4150 1N4150 D035 PDF

    BYX71-600

    Abstract: BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005
    Text: RECTRON SEMICONDUCTOR INDUSTRIAL Part No. 40266 40267 1.5KE10 1.5KE10 1.5KE10 1.5KE100 1.5KE100 1.5KE100 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE11 1.5KE11 1.5KE11 1.5KE110 1.5KE110 1.5KE110 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A


    Original     		5KE10 5KE100 5KE100A 5KE10A BYX71-600 BYX71-350 philips BYX71-600 BY208 BYX71 MDA2501 Solitron J775-2 30S8 BY198 GI DL005 PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF