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Vishay Semiconductors 1N5059TR DIODE AVALANCHE 200V 2A SOD57
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5059TR	Cut Tape	42,792		1	1 $0.66 10 $0.445 100 $0.66 1000 $0.21812 10000 $0.20002	Buy Now
	1N5059TR	Reel	35,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.165	Buy Now
New Advantage Corporation	1N5059TR		10,000		1	1 - 10 - 100 - 1000 - 10000 $0.216	Buy Now
Vishay Semiconductors 1N5059GP-E3-54 DIODE GEN PURP 200V 1A DO204AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5059GP-E3-54	Cut Tape	27,790		1	1 $0.7 10 $0.467 100 $0.7 1000 $0.22966 10000 $0.21077	Buy Now
	1N5059GP-E3-54	Reel	20,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.17563	Buy Now
Diotec Semiconductor AG 1N5059 DIODE GEN PURP 200V 2A DO204AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5059	Bulk	2,974		1	1 $0.16 10 $0.098 100 $0.0606 1000 $0.03866 10000 $0.02726	Buy Now
Mouser Electronics	1N5059		9,807			1 $0.16 10 $0.081 100 $0.051 1000 $0.039 10000 $0.031	Buy Now
Verical	1N5059		5,348		2,359	1 - 10 - 100 - 1000 - 10000 $0.0244	Buy Now
	1N5059		4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.0297	Buy Now
Arrow Electronics	1N5059		4,000	6 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.0293	Buy Now
Onlinecomponents.com	1N5059					1 - 10 - 100 - 1000 - 10000 $0.0212	Buy Now

TME	1N5059		5,348		1	1 $0.2392 10 $0.18 100 $0.0745 1000 $0.025 10000 $0.0204	Buy Now
Vishay Semiconductors 1N5059TAP DIODE AVALANCHE 200V 2A SOD57
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5059TAP	Ammo Pack			25,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Semiconductors 1N5059GPHE3-54 DIODE GEN PURP 200V 1A DO204AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5059GPHE3-54	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1N5059 Datasheets (59)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5059	Changzhou Galaxy Electrical	DIODE FAST RECOVERY RECTIFIER 200V 1A 2 pin DO-41	Original	PDF
1N5059	Diotec	Silicon Rectifiers	Original	PDF
1N5059	General Semiconductor	Rectifier Diode, Standard Recovery Rectifier, Single, 200V, SOD-57, 2-Pin	Original	PDF
1N5059	General Semiconductor	GLASS PASSIVATED JUNCTION RECTIFIER	Original	PDF
1N5059	Philips Semiconductors	Controlled Avalanche Rectifier	Original	PDF
1N5059	Philips Semiconductors	High-speed diodes	Original	PDF
1N5059	Semikron	Diode, 2A, 200V, Silicon Diode	Original	PDF
1N5059	Semikron	Standard silicon rectifier diode	Original	PDF
1N5059	Taitron Components	Rectifier Diode, Single, 200V, SOD-57, 2-Pin	Original	PDF
1N5059	Vishay Semiconductors	Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:200V; Forward Current Avg Rectified, IF(AV):2A; Non Repetitive Forward Surge Current Max, Ifsm:50A; Forward Voltage Max, VF:1.15V; Package/Case:DO-204	Original	PDF
1N5059	Vishay Telefunken	Silicon Mesa Rectifiers	Original	PDF
1N5059	Central Semiconductor	GLASS PASSIVATED RECTIFIER 2.5 AMPS, 200-1000 VOLTS JEDEC DO-204 AP CASE	Scan	PDF
1N5059	Central Semiconductor	DIODE ULTRA FAST RECOVERY RECTIFIER 200V 1A 2GPR-1A	Scan	PDF
1N5059	Dionix	General Purpose Axial Lead Silicon Rectifier	Scan	PDF

1N5059	General Electric	Semiconductor Data Handbook 1977	Scan	PDF
1N5059	General Electric	Semiconductor Data Book 1971	Scan	PDF
1N5059	General Instrument	Short Form Data 1976	Short Form	PDF
1N5059	General Instrument	Semiconductors and Electronic Components 1971	Scan	PDF
1N5059	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifiers and Voltage Suppressors	Scan	PDF
1N5059	Harris Semiconductor	1A, 200V - 800V Diodes	Scan	PDF

1N5059 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N5062 Abstract: No abstract text available Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol	Original	PDF	1N5059---1N5062 DO-41 STD-750 1N5062
1n5062g Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation	Original	PDF	1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 1n5062g DO-204AC JESD22-B102D J-STD-002B 1N5062GP
1N5059 Abstract: 1N5060 1N5061 1N5062 DO-204AP Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA	Original	PDF	1N5059 1N5062 MIL-S-19500 DO-204AP DO-204AP 50mVp-p 1N5060 1N5061 1N5062
1N5062 diode Abstract: 1N5060 1N5061 1N5061 vishay Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading	Original	PDF	1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay
1n5062 equivalent Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060	Original	PDF	BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5059 diode 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55
DIODE 1N5060 Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading	Original	PDF	1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
1n5060 Abstract: 1N5062 1N5061 1N5059 Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,	Original	PDF	1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062
1n5060 Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506 Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading	Original	PDF	1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506
1n5062 equivalent Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56 Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 – 1N5059 BYW53 – 1N5060	Original	PDF	BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
1N5060GP Abstract: No abstract text available Text: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.	Original	PDF	1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 50mVp-p 1N5060GP
Untitled Abstract: No abstract text available Text: BYW52.BYW56 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 – 1N5059	Original	PDF	BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062
Untitled Abstract: No abstract text available Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current	Original	PDF	1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
1N5059 Abstract: 1N5062 1N5060 1N5061 Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand	Original	PDF	1N5059---1N5062 DO-15, 39gram 1N5059 1N5062 1N5060 1N5061
1n5060v Abstract: iSO 15765 1N5059 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode Text: 1N5059 to 1N5062 VISHAY Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • • Controlled avalanche characteristics Glass passivated Low reverse current High surge current loading Hermetically sealed axial-leaded glass envelope	Original	PDF	1N5059 1N5062 OD-57 MIL-STD-750, 1N5059 OD-57 1N5060 1N5061 D-74025 1n5060v iSO 15765 1N5060 1N5061 1N5062 Diode 1N5062 1N5059 diode

Untitled Abstract: No abstract text available Text: 1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction	Original	PDF	1N5059GP, 1N5060GP, 1N5061GP, 1N5062GP 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC. 2002/95/EC
1N5062 Abstract: 1N5059 1N5060 1N5061 Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIERS 1.0 AMP, 200 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package, designed for general	Original	PDF	1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062
Untitled Abstract: No abstract text available Text: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040	OCR Scan	PDF	DO-41 1N5391 CPR1-010 1N5059 CR1-010 CPR1-020 1N5614 1N5392 1N5393 CR1-020
Untitled Abstract: No abstract text available Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically	OCR Scan	PDF	1N5059GPTHRU 1N5062GP MIL-S-19500
Untitled Abstract: No abstract text available Text: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con structed rectifiers ♦ 1.0 Ampere oper ation at Ta=75°C with no thermal runaway 'f e	OCR Scan	PDF	1N5059 1N5062 D0-204AP MIL-S-19500
Untitled Abstract: No abstract text available Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^	OCR Scan	PDF	1N5059GPTHRU 1N5062GP MIL-S-19500 1N5059GFTHRU
1ns061 Abstract: No abstract text available Text: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0	OCR Scan	PDF	1N5059GP 1N5062GP 1N5059 1N5062 DO-15 MIL-S-19500 1ns061
Untitled Abstract: No abstract text available Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction	OCR Scan	PDF	1N5059 1N5062 b-2233 1N5059
In5062 Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059 Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com	OCR Scan	PDF	43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
Untitled Abstract: No abstract text available Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA	OCR Scan	PDF	1N5059 1N5062 MIL-S-19500 D0-204AP

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Vishay Semiconductors 1N5059TR

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1N5059 Datasheets (59)

1N5059 Datasheets Context Search

1N5062

1n5062g

1N5059

1N5062 diode

1n5062 equivalent

DIODE 1N5060

1n5060

1n5060

1n5062 equivalent

1N5060GP

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1N5059

1n5060v

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1N5062

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1ns061

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In5062

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