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    1N506 Search Results

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    1N506 Price and Stock

    Vishay Semiconductors 1N5062TR

    DIODE AVALANCHE 800V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5062TR Reel 25,000 5,000
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    • 10000 $0.18
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    Vishay Semiconductors 1N5062TAP

    DIODE AVALANCHE 800V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5062TAP Cut Tape 24,418 1
    • 1 $0.41
    • 10 $0.312
    • 100 $0.41
    • 1000 $0.2156
    • 10000 $0.20219
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    1N5062TAP Ammo Pack 15,000 5,000
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    Vishay Semiconductors 1N5060TAP

    DIODE AVALANCHE 400V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5060TAP Cut Tape 23,186 1
    • 1 $0.66
    • 10 $0.5
    • 100 $0.66
    • 1000 $0.24189
    • 10000 $0.22006
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    Vishay Semiconductors 1N5060TR

    DIODE AVALANCHE 400V 2A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5060TR Cut Tape 18,419 1
    • 1 $0.6
    • 10 $0.415
    • 100 $0.6
    • 1000 $0.21454
    • 10000 $0.21108
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    1N5060TR Reel 15,000 5,000
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    • 10000 $0.18109
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    Rochester Electronics LLC 1N5060

    DIODE STANDARD 400V 3A SOD57
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1N5060 Bulk 12,363 1,567
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    1N506 Datasheets (235)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N506 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N506 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5060 Central Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, RECTIFIER GPP 1A 400V GPR-1A Original PDF
    1N5060 Central Semiconductor Rectifier Diode: Rectifiers: Single: 400V: GPR-1A: 2-Pin Original PDF
    1N5060 Changzhou Galaxy Electrical DIODE FAST RECOVERY RECTIFIER 400V 1A 2 pin DO-41 Original PDF
    1N5060 Diotec Silicon Rectifiers Original PDF
    1N5060 General Semiconductor Rectifier Diode, Standard Recovery Rectifier, Single, 400V, SOD-57, 2-Pin Original PDF
    1N5060 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N5060 Philips Semiconductors Controlled Avalanche Rectifier Original PDF
    1N5060 Semikron Rectifier Diode, Single, 400V, DO-15, 2-Pin Original PDF
    1N5060 Semikron Standard silicon rectifier diode Original PDF
    1N5060 Taitron Components Rectifier Diode, Single, 400V, DO-204AP, 2-Pin Original PDF
    1N5060 Vishay Semiconductors DIODE, 2A 400V Original PDF
    1N5060 Vishay Telefunken Silicon Mesa Rectifiers Original PDF
    1N5060 Central Semiconductor GLASS PASSIVATED RECTIFIER 2.5 AMPS, 200-1000 VOLTS JEDEC DO-204 AP CASE Scan PDF
    1N5060 Dionix General Purpose Axial Lead Silicon Rectifier Scan PDF
    1N5060 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N5060 General Electric Semiconductor Data Book 1971 Scan PDF
    1N5060 General Instrument Short Form Data 1976 Short Form PDF
    1N5060 General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifiers and Voltage Suppressors Scan PDF
    ...

    1N506 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1N5062

    Abstract: No abstract text available
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200 - 800 V CURRENT: 1.0 A FAST RECOVERY RECTIFIER FEATURES DO - 41 Low cost Diffused junction Low leakage Low forward voltage drop High current capability Easily cleaned with Freon,Alcohol,Isopropanol


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    1N5059---1N5062 DO-41 STD-750 1N5062 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rectifiers, General purpose Continued Io (AMPS) 1.5 1.0 @ TA (°C) 75 55 75 70 75 IFSM (AMPS) 50 50 50 50 50 / I CASE DO-41 GPR-1A VRRM (VOLTS) 50 1N5391 100 200 1N5059 1N5614 CPR1-010 1N5392 CR1-010 CPR1-020 1N5393 CR1-020 300 400 1N5394 1N5060 CPR1-040


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    DO-41 1N5391 CPR1-010 1N5059 CR1-010 CPR1-020 1N5614 1N5392 1N5393 CR1-020 PDF

    1N4097

    Abstract: 1N5107 1N508 MZ-11 MZ240 MZ210 1N5117 MZ80 1N5064 1N5065
    Text: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. The diode expprts SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.


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    1N5063 1N5117 MZ806 MZ890, MZ211 MZ111) 1N5117, 1N4097 1N5107 1N508 MZ-11 MZ240 MZ210 MZ80 1N5064 1N5065 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1 . 0 Ampere DO-2Q4AC FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically


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    1N5059GPTHRU 1N5062GP MIL-S-19500 PDF

    1n5062g

    Abstract: DO-204AC JESD22-B102D J-STD-002B 1N5059GP 1N5062GP
    Text: 1N5059GP thru 1N5062GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


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    1N5059GP 1N5062GP MIL-S-19500 DO-204AC DO-15) 2002/95/EC 2002/96/EC 08-Apr-05 1n5062g DO-204AC JESD22-B102D J-STD-002B 1N5062GP PDF

    1N5059

    Abstract: 1N5060 1N5061 1N5062 DO-204AP
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1. 0 Ampere * D TE FEATURES ♦ High temperature metallurgically bonded construction ♦ 1.0 Ampere operation at TA=75°C with no thermal runaway ♦ Typical IR less than 0.1µA


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    1N5059 1N5062 MIL-S-19500 DO-204AP DO-204AP 50mVp-p 1N5060 1N5061 1N5062 PDF

    1N5062 diode

    Abstract: 1N5060 1N5061 1N5061 vishay
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


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    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode 1N5061 vishay PDF

    1n5062 equivalent

    Abstract: 1N5059 diode 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55
    Text: BYW52.BYW56 Silicon Mesa Rectifiers Features D D D D D D Controlled avalanche characteristics Glass passivated junction Hermetically sealed package Low reverse current High surge current loading Electrically equivalent diodes: BYW52 1N5059 BYW53 1N5060


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    BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5059 diode 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 PDF

    Z219

    Abstract: z234 Z836 z845 Z827 Z236 Z211B zener z8 Z824 IC Z809
    Text: 1N5063 - 1N5117 M Z806 - M Z890, MZ 210 - MZ 2 4 0 M icm em i Corp. ^ The o<oce experts SANTA A N A, CA ! SC O T T SD A LE , A Z F o r m ore in fo rm a tio n call: 714 9 7 9 - 8 2 2 0 / 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • M icrom iniature packag e.


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    1N5063 1N5117 MZ111) 1N5117, Z219 z234 Z836 z845 Z827 Z236 Z211B zener z8 Z824 IC Z809 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 200 to 800 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ 1.0 Ampere oper­ ation at Ta=75°C with no thermal runaway 'f e


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    1N5059 1N5062 D0-204AP MIL-S-19500 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059GPTHRU 1N5062GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere DO-2Q4AC S FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^


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    1N5059GPTHRU 1N5062GP MIL-S-19500 1N5059GFTHRU PDF

    1ns061

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 800 Volts Current - 1.0 Ampere FEATURES ♦ High temperature metallurgically bonded con­ structed rectifiers ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0


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    1N5059GP 1N5062GP 1N5059 1N5062 DO-15 MIL-S-19500 1ns061 PDF

    Untitled

    Abstract: No abstract text available
    Text: ESE D M I C R O S E M I CORP t l l S ñ h S OOGDTTfl b 1N5063 - 1N5117 MZ806 - MZ890, MZ 2 1 0 -M Z 240 MierasemiCarp. ' Ttwí&jetxpttts SANTA ANA, CA SCOTTSDALE. AZ Foe more information calk 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • •


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    1N5063 1N5117 MZ806 MZ890, MZ21T MZ111J. 1N5117, 806-M PDF

    DIODE 1N5060

    Abstract: 1n5060v 1N5060 Sinterglass 1N5061 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


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    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 18-Jul-08 DIODE 1N5060 1n5060v 1N5060 Sinterglass 1N5059 1N5062 diode 1n5059 MIL-STD-750 METHOD 2026 1n5060 diode PDF

    1n5060

    Abstract: 1N5062 1N5061 1N5059
    Text: 1N5059 1N5060 1N5061 1N5062 w w w. c e n t r a l s e m i . c o m GLASS PASSIVATED SILICON RECTIFIER 1 AMP, 200 THRU 800 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR 1N5059 series types are silicon rectifiers manufactured in a hermetically sealed, glass passivated package,


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    1N5059 1N5060 1N5061 1N5062 CPR1-010 1N5060 1N5062 PDF

    1n5060

    Abstract: 1N5062 diode 1N5061 DIODE 1N5060 1N506
    Text: 1N5059, 1N5060, 1N5061,1N5062 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original
    1N5059, 1N5060, 1N5061 1N5062 2002/95/EC 2002/96/EC OD-57 MIL-STD-750, 1N5059 1N5060 1N5062 diode DIODE 1N5060 1N506 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL SEMICONDUCTOR, INC . 1N5059 thru 1N5062 M INIATURE GLASS PASSIVATED SILICON RECTIFIERS VOLTAGE - 200 TO 800 Volts CURRENT - 1.0 Ampere MECHANICAL DATA FEATURES C a s e : One piece glass, h e rm e tic a lly sealed • G lass Passivated cavity-free junction


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    1N5059 1N5062 b-2233 1N5059 PDF

    1n5062 equivalent

    Abstract: 1N5059 1N5060 1N5061 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56
    Text: BYW52.BYW56 TELEFUNKEN Semiconductors Silicon Mesa Rectifiers Features D Controlled avalanche characteristics D Glass passivated junction D Hermetically sealed package D Low reverse current D High surge current loading D Electrically equivalent diodes: BYW52 1N5059 BYW53 1N5060


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    BYW52. BYW56 BYW52 1N5059 BYW53 1N5060 BYW54 1N5061 BYW55 1N5062 1n5062 equivalent 1N5060 1N5062 BYW52 BYW53 BYW54 BYW55 BYW56 PDF

    1N5060GP

    Abstract: No abstract text available
    Text: 1N5059GP THRU 1N5062GP Glass Passivated Junction Rectifier Reverse Voltage 200 to 800 V Forward Current 1.0 A DO-204AC DO-15 Features 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. * d e t n e t a P 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA.


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    1N5059GP 1N5062GP DO-204AC DO-15) MIL-S-19500 50mVp-p 1N5060GP PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059, 1N5060, 1N5061, 1N5062 www.vishay.com Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically envelope sealed axial-leaded glass • Controlled avalanche characteristics • Low reverse current


    Original
    1N5059, 1N5060, 1N5061, 1N5062 OD-57 MIL-STD-750, 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    In5062

    Abstract: in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059
    Text: HARRIS SEniCON» SECTOR iü l H iMJ bôE D m 43Dgg71 UÜ5Q3QS 414 • 1N5059, 1N5060 1N5061, 1N5062 a r r is SE.COHOUCTO» 1A, 200V - 800V DÌOdeS December 1993 Package Features • JEDEC STYLE D0-204 TOP VIEW Hlgh-Temperature Metallurglcally Bonded, No Com­


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    43Dgg71 1N5059, 1N5060 1N5061, 1N5062 MIL-STD-19500 C/10a/ 1N5060, In5062 in5061 1N5062 1N5061 1N5060 1n5059 harris JEDEC do-204 1N5059 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5059 THRU 1N5062 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 1.0 Ampere FEATURES DO-2Q4AP ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation atTA=75°C with no thermal runaway ♦ Typical Ir less than 0.1 jaA


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    1N5059 1N5062 MIL-S-19500 D0-204AP PDF

    1N5059

    Abstract: 1N5062 1N5060 1N5061
    Text: BL GALAXY ELECTRICAL 1N5059-1N5062 VOLTAGE RANGE: 200-800 V CURRENT: 2.0 A PLASTIC SILICON RECTIFIER FEATURES Low cos t Diffus ed junction Glass passivated chips Low forward voltage drop High crrent capability Eas ily cleaned with Freon,Alcohol, ls opropand


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    1N5059---1N5062 DO-15, 39gram 1N5059 1N5062 1N5060 1N5061 PDF

    Z228

    Abstract: Z219 z845 Z238 Z-807 Z224 z807 e Z812 Z214 Z836
    Text: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 •MZ 240 Microsemi Corp. ' The diode experts SANTA ANA, CA For m ore inform ation call: 714 979-8220 3-WATT G U S S ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.


    OCR Scan
    1N5063 1N5117 MZ806 MZ890, MZ211 MZ111) 00G24Q4 1N5117, Z806-M Z228 Z219 z845 Z238 Z-807 Z224 z807 e Z812 Z214 Z836 PDF