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    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564 PDF

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E PDF

    FMS2027

    Abstract: FMS2027-000 MIL-HDBK-263
    Text: FMS2027 FMS2027 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2027 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It


    Original     		FMS2027 DC-20GHz FMS2027 20GHz FMS2027-000 DS090612 FMS2027-000SQ FMS2027-000 MIL-HDBK-263 PDF

    FPD3000

    Abstract: MIL-HDBK-263
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD3000 FPD30002W FPD3000 25mx3000m 12GHz 42dBm FPD3000-000 MIL-HDBK-263 PDF

    rf mems switch spst

    Abstract: FMS2023 FMS2023-000 MIL-HDBK-263
    Text: FMS2023 FMS2023 DC-20GHz MMIC LOW LOSS SPST ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2023 is a low loss, high isolation broadband single-pole-single-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It


    Original     		FMS2023 DC-20GHz FMS2023 20GHz FMS2023-000 FMS2023-000SQ DS090612 rf mems switch spst FMS2023-000 MIL-HDBK-263 PDF

    pseudomorphic HEMT

    Abstract: FPD2250 MIL-HDBK-263 InP transistor HEMT
    Text: FPD2250 FPD22501.5W Power pHEMT 1.5W POWER pHEMT Package Style: Bare Die Product Description Features The FPD2250 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx2250μm Schottky barrier gate, defined by highresolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD2250 FPD22501 FPD2250 25mx2250m 32dBm 12GHz 42dBm FPD2250-000 pseudomorphic HEMT MIL-HDBK-263 InP transistor HEMT PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD3000 FPD30002W Power pHEMT 2W POWER pHEMT Package Style: Bare Die Product Description Features The FPD3000 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx3000μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD3000 FPD30002W FPD3000 mx3000Î 12GHz 42dBm FPD3000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD1500 FPD15001W FPD1500 mx1500Î 29dBm 12GHz 41dBm PDF

    FPD200P70

    Abstract: TL11 TL22 l420 FPD200P70SR
    Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.


    Original     		FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR PDF

    FPD1500SOT89

    Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
    Text: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		FPD1500SOT89 FPD1500SOT8 FPD1500SOT89 25mx1500m 42dBm FPD1500SOT89E: FPD1500SOT89CESR FPD1500SOT89CESQ FPD1500SOT89CESB DS090612 FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh PDF

    FPD1500

    Abstract: FPD1500 SOT89 ablestick 550 MIL-HDBK-263
    Text: FPD1500 FPD15001W Power pHEMT 1W POWER pHEMT Package Style: Bare Die Product Description Features The FPD1500 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx1500μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD1500 FPD15001W FPD1500 25mx1500m 29dBm 12GHz 41dBm FPD1500 SOT89 ablestick 550 MIL-HDBK-263 PDF

    FPD6836P70

    Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		FPD6836P70 FPD6836P70 22dBm 18GHz 11GHz) 18GHz) FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p PDF

    FMS2024

    Abstract: v44 diode FMS2024-000 MIL-HDBK-263 High Isolation Reflective Switch DC-5GHz
    Text: FMS2024 FMS2024 DC-20GHz MMIC LOW LOSS SPDT ABSORPTIVE SWITCH Package Style: Bare Die Product Description Features The FMS2024 is a low loss, high isolation broadband single-pole double-throw Gallium Arsenide switch, designed on the FL05 0.5 m switch process from RFMD. It


    Original     		FMS2024 DC-20GHz FMS2024 FMS2024-000 DS090612 FMS2024-000SQ FMS2024-000S3 v44 diode FMS2024-000 MIL-HDBK-263 High Isolation Reflective Switch DC-5GHz PDF

    fpd2000as

    Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
    Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		FPD2000AS FPD2000AS 33dBm 46dBm 85GHz) EB2000AS-AA 14GHz) EB2000AS-AD EB2000AS-AG FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise PDF

    FPD6836

    Abstract: FPD6836-000SQ FPD6836-000 pseudomorphic HEMT MIL-HDBK-263 TRANSISTOR 841
    Text: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD6836 FPD6836 25mx360m 12GHz 24GHz FPD6836-000 DS090612 FPD6836-000SQ FPD6836-000SQ FPD6836-000 pseudomorphic HEMT MIL-HDBK-263 TRANSISTOR 841 PDF

    Untitled

    Abstract: No abstract text available
    Text: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes


    Original     		FPD6836 FPD6836 mx360Î 12GHz 24GHz FPD6836-000 DS090612 FPD6836-000SQ PDF

    FPD6836P70

    Abstract: No abstract text available
    Text: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.


    Original     		FPD6836P70 FPD6836P70 22dBm 18GHz FPD6836P70-AG FPD6836P70-AJ FPD6836P70SQ PDF

    FPD1050SOT89

    Abstract: FPD1050SOT89E 941 LG
    Text: FPD1050SOT89 FPD1050SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features at 2.0GHz The FPD1050SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It features a 0.25 mx1050μm Schottky


    Original     		FPD1050SOT89 FPD1050SOT8 FPD1050SOT89 25mx1050m 24dBm 37dBm FPD1050SOT89E FPD1050SOT89CE EB1050SOT89CE-BB 85GHzEvaluation FPD1050SOT89E 941 LG PDF

    70GHz HEMT Amplifier

    Abstract: smd code z16 transistor z14 smd FPD1000AS T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf
    Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD1000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized


    Original     		FPD1000AS FPD1000AS 31dBm 42dBm -52dBc 21dBm 880MHz) EB1000AS-AB 70GHz HEMT Amplifier smd code z16 transistor z14 smd T491B105M035AS7015 atc600s2r0bw max 9694 e transistor bc 567 capacitor 1mf PDF