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    DRAM DDR Search Results

    DRAM DDR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CDCV857ADGGR Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    CDCV857ADGGG4 Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    CDCV857ADGG Texas Instruments 2.5V SSTL-II Phase Lock Loop Clock Driver for Double Data-Rate Synchronous DRAM Applications 48-TSSOP 0 to 85 Visit Texas Instruments
    TMS4030JL Rochester Electronics LLC TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
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    DRAM DDR Price and Stock

    Altera Corporation IP-SDRAM/HPDDR

    Development Software DDR SDRAM Control MegaCore
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IP-SDRAM/HPDDR
    • 1 $3995
    • 10 $3995
    • 100 $3995
    • 1000 $3995
    • 10000 $3995
    Get Quote

    ADLINK Technology Inc 8G SOD DDR4 2400 DDR4 SDRAM

    Memory Modules DDR4-2400, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL17, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 8G SOD DDR4 2400 DDR4 SDRAM
    • 1 $50.99
    • 10 $47.29
    • 100 $38.97
    • 1000 $38.97
    • 10000 $38.97
    Get Quote

    ADLINK Technology Inc 8G SOD DDR4 2666 DDR4 SDRAM

    Memory Modules DDR4-2666, 8GB, 1Gx64, SO-DIMM 260P, 1.2V, Rank:2, CL19, Non-ECC, OP Temp:0-85, Fix Die:No, Chip(1Gx8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 8G SOD DDR4 2666 DDR4 SDRAM
    • 1 $50.99
    • 10 $47.29
    • 100 $38.97
    • 1000 $38.97
    • 10000 $38.97
    Get Quote

    ADLINK Technology Inc 32GB DDR4 SDRAM SO-DIMM

    Memory Modules DDR4-2400, 32GB, 4Gx64, SO-DIMM 260P, 1.2V, CL17, Rank:2, Non-ECC, OP Temp:0-85, Fix Die: No, Chip(2048Mx8*16), height 30 mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 32GB DDR4 SDRAM SO-DIMM
    • 1 $174.22
    • 10 $151.79
    • 100 $147.3
    • 1000 $147.3
    • 10000 $147.3
    Get Quote

    ADLINK Technology Inc 32GB DDR5 SDRAM SO-DIMM

    Memory Modules DDR5-5600, 32GB, 4Gx64, SO-DIMM 262P, 1.1V, CL46, Rank:2, Non-ECC, OP Temp:-0-85, Fix Die: No, Chip(2048Mx8*16), height 30 mm
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 32GB DDR5 SDRAM SO-DIMM
    • 1 $182.83
    • 10 $180.06
    • 100 $176.09
    • 1000 $176.09
    • 10000 $176.09
    Get Quote

    DRAM DDR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 16Mbit Synchronous DRAM Series ♦HYUNDAI HY57V164010- 4Mx4bit Synchronous DRAM HY57V168010- 2Mx8blt Synchronous DRAM HY57V161610- 1Mx16bit Synchronous DRAM DESCRIPTION The HY57V164010, HY57V168010, HY57V161610 Programmable options include the length of are high speed 3.3 Volt synchronous dynamic RAMs


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    16Mbit HY57V164010- HY57V168010- HY57V161610- 1Mx16bit HY57V164010, HY57V168010, HY57V161610 512Kbit 1SD10-Q3-NOV96 PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 DRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


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    BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    400x875

    Abstract: K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
    Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.0 - 1 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release - 2 - REV. 0.0 Dec. 2003 K4C5608/1638F 256Mb Network-DRAM General Information


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    K4C5608/1638F 256Mb 400Mbps) 366Mbps 333Mbps 400x875 K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA PDF

    K4C560838C-TCD3

    Abstract: K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.7 - 1 - REV. 0.7 Aug. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    K4C5608/1638C 256Mb 366Mbps/pin 183MHz) K4C560838C-TCD3 K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD3 K4C561638C-TCD4 K4C561638C-TCDA PDF

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.6 - 1 - REV. 0.6 Apr. 2003 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    K4C5608/1638C 256Mb 366Mbps/pin 183MHz) PDF

    fast page mode dram controller

    Abstract: ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller
    Text: Fast Page Mode DRAM Controller November 2010 Reference Design RD1014 Introduction Fast Page Mode DRAM FPM DRAM offers improved speed over standard DRAM since memory accesses performed within the same address row (page) require a precharge only for the first access. Subsequent accesses


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    RD1014 MC68340, 1-800-LATTICE fast page mode dram controller ispMACH M4A3 decoder.vhd 16bit microprocessor using vhdl LC4256ZE MC68340 mach memory controller 1KByte DRAM RD1014 vhdl code for sdram controller PDF

    Untitled

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.5 - 1 - REV. 0.5 Nov. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    K4C5608/1638C 256Mb 366Mbps/pin 183MHz) 256Mb PDF

    K4C560838C-TCB

    Abstract: No abstract text available
    Text: K4C5608/1638C 256Mb Network-DRAM Network-DRAM Specification Version 0.2 - 1 - REV. 0.2 Jan. 2002 K4C5608/1638C 256Mb Network-DRAM Revision History Version 0.0 Oct. / 5 / 2001 - First Release Version 0.1 (Dec. / 15 / 2001) - The product name is changed to Network-DRAM


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    K4C5608/1638C 256Mb Orga41 K4C560838C-TCB PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 256K WIDE DRAM X MT4C16260/1 16 WIDE DRAM 256K X 16 DRAM FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • A ddress entry: ten row-addresses, eight columnaddresses • High-performance CMOS silicon-gate process


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    MT4C16260/1 500mW 024-cycle MT4C16261 40-Pin PDF

    4C8512

    Abstract: No abstract text available
    Text: ADVANCE 512K M T4C 8 512/3 S W IDE DRAM X 8 512K x 8 DRAM WIDE DRAM EXTENDED REFRESH SELF REFRESH FEATURES PIN ASSIGNMENT Top View • Industry-standard x8 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, nine colum naddresses


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    MT4C8513 024-cycle 128ms 350mW 28-Pin MT4C8512/3 4C8512 PDF

    Q211

    Abstract: S72XS128RD0AHBH63 s72xs128 Spansion ddr S72XS128RD0AHBHE3 S98WS RSC133 Spansion S72NS128RD0AHBL0 S72NS128
    Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA July 14, 2010 Obsolescence Notification No: Subject: 2801 Obsolescence of the DRAM Type 5, 128Mb DDR Multi-Chip Packages MCPs products listed below Spansion LLC is announcing the obsolescence of DRAM Type 5, 128Mb DRAM, and all valid


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    128Mb S72NS128PD0AJBLGA, S72NS128PD0AJBLGB, S72NS128RD0AHBL00, S72NS128RD0AHBL03, S72NS128RD0AHBLG0, S72NS128RD0AHBLG3 S72NS128PD0KJFLG S72NS256PD0AJBLG0, Q211 S72XS128RD0AHBH63 s72xs128 Spansion ddr S72XS128RD0AHBHE3 S98WS RSC133 Spansion S72NS128RD0AHBL0 S72NS128 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM5361203BW/BWG DRAM MODULE KMM5361203BW/BWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Sam sung KM M 5361203BW is a 1M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


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    KMM5361203BW/BWG KMM5361203BW/BWG 1Mx36 1Mx16 5361203BW KMM5361203BW cycles/16m KMM5361203BW PDF

    jeida dram 88 pin

    Abstract: 88pins toshiba dram jeida dram card 5v 88 pins dram card
    Text: Introduction D R A M ^fe TYPICAL DRAM CARD APPLICATIONS Typical DRAM memory card applications include portable computers, fax machines, electronic instruments, printers and PDAs. THE TOSHIBA DRAM PRODUCT LINE UP Toshiba has migrated to the 88-pin standard, which has replaced the older 38- and 60-pin DRAM cards. Toshiba


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    88-pin 60-pin jeida dram 88 pin 88pins toshiba dram jeida dram card 5v 88 pins dram card PDF

    Untitled

    Abstract: No abstract text available
    Text: |U llC R O N 256K MT4C16260 X 16 DRAM 256K x 16 DRAM DRAM FEATURES • Industry-standard x l6 pinouts, tim ing, functions and packages • A ddress entry: ten row -addresses, eight colum naddresses • H igh-perform ance CMOS silicon-gate process • Single +5V+10% pow er supply*


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    MT4C16260 375mW 024-cycle 40-Pin PDF

    MT4LSDT1664HI133

    Abstract: MT48LC16M32 MT4LSDT1664HI MT8LSDT6464HI-133 MEG32 MT48LC8M32 MT48LC4M32B2F5 MT48LC4M32LFF5 MT46V64M8FN MT8LSDT6464HI
    Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides


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    PDF

    74ls

    Abstract: N74LS764N
    Text: Signelics 74LS764 DRAM Controller DRAM Dual-Ported Controller Product Specification Logic Products FEATURES • Allows two microprocessors to access the same bank of DRAM TYPE TYPICAL PROPAGATION DELAY TYPICAL SUPPLY CURRENT TOTAL • Replaces 25 TTL devices to


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    74LS764 18-bit 30MHz 215mA PLCC-44 N74LS764N N74LS764A 500ns 74ls PDF

    MT8LSDT3264HI-133

    Abstract: PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG
    Text: Industrial Temperature DRAM Micron’s Industrial Temperature DRAM For Ultimate Performance Under Extreme Conditions For products operating at temperatures ranging from -40°C to +85°C, Micron Technology’s extensive line of industrial temperature IT DRAM provides outstanding performance and proven reliability. We


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    256MB MT8LSDT3264HI-133 PC133 tsop 8X14 MT48LC16M16A2TG MT48LC4M32B2TG MT48LC4M32B2F5 MT48H32M16LF MT48LC8M32B2 MT48LC2M32B2TG MT48LC32M8A2TG PDF

    K4C560838F-TCD3

    Abstract: K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA
    Text: K4C5608/1638F 256Mb Network-DRAM 256Mb Network-DRAM Specification Version 0.3 - 1 - REV. 0.3 Jan. 2005 K4C5608/1638F 256Mb Network-DRAM Revision History Version 0.0 Dec./ 2003 - First Release Version 0.1 (Aug./ 2004) - Deleted BL2 and self refresh Version 0.2 (Nov./ 2004)


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    K4C5608/1638F 256Mb 400Mbps) 366Mbps 333Mbps K4C560838F-TCD3 K4C560838F-TCD4 K4C560838F-TCDA K4C561638F-TCD3 K4C561638F-TCD4 K4C561638F-TCDA PDF

    DRAM Controller

    Abstract: 112-12a 100C we32100 8 bit dRAM Controller we32103
    Text: WE 32103 DRAM Controller Description The WE 32103 DRAM C ontroller provides address m ultiplexing, access and cycle time management, and refresh control fo r dynamic random access memory DRAM . In a single chip, it provides the interface between high­


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    32-bit 18-MHz 125-pin DRAM Controller 112-12a 100C we32100 8 bit dRAM Controller we32103 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5322200AW DRAM Module ELECTRONICS KMM5322200AW/AWG Fast Page Mode 2Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322200AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322200AW consists of four CMOS


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    KMM5322200AW KMM5322200AW/AWG 2Mx32 1Mx16 KMM5322200AW cycles/16 KMM5322200AWG PDF

    part number decoder toshiba dram

    Abstract: MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram
    Text: Systems in Silicon Designing with DRAM AMD Embedded Processor Division, Designing with DRAM Overview Designing with DRAM Agenda Systems in Silicon • What are DRAMs? – The transistor level – How they differ from SRAM and FLASH • Bus Cycle Review – 16-bit


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    16-bit 32-bit Am186ED 50-ns part number decoder toshiba dram MOSYS eDRAM LG concurrent RDRAM "embedded dram" nec ibm edram samsung dram sldram MoSys sram embedded mosys rdram samsung cdram PDF

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322100BKU is a 2M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The


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    KMM53221OOBKU/BKUG KMM53221 2Mx32 KMM5322100BKU KMM5322100BKU cycles/32 KMM5322100BKUG 28-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KS84EC30 DYNAMIC RAM CONTROLLERS FEATURES PRODUCT OVERVIEW • 40 MHz operation The Samsung KS84EC30 is a high performance DRAM controller designed for high speed DRAM arrays up to 4Mbytes in size. It simplifies the interface between the microprocessor and DRAM array, while also significantly


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    KS84EC30 KS84EC30 68040/68EC030 68-Pln 84EC30 40MHz PDF

    Address Auto Decode

    Abstract: sdram 4 bank 4096 16 K4S56163LC
    Text: Mobile DRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RG(S) CMOS SDRAM 16Mx16 Mobile DRAM (Mobile Function support) Revision 0.4 December 2001 Rev. 0.4 Dec. 2001 Mobile DRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RG(S) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)


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    K4S56163LC-RG 16Mx16 256Mb Address Auto Decode sdram 4 bank 4096 16 K4S56163LC PDF