DIODE S1308 Search Results

BUZ21

Contextual Info: SIEMENS BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 21 Vbs 100 V b ^DSiort Package Ordering Code 21 A 0.085 Q TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current h Values

Contextual Info: BUZ 21 Infineon •chnologiês SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vbs b f f DS(on Package BUZ 21 100 V 21 A 0.085 Q TO-220 AB ’ Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1308-A2

Abstract: BUZ21
Contextual Info: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

C67078-S1308-A2

Abstract: BUZ21
Contextual Info: BUZ 21 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 2 Pin 1 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Continuous drain current

BUZ21

Abstract: sis8
Contextual Info: SIEM ENS BUZ 21 SIPMOS Power Transistor • • • N channel Enhancem ent mode Avalanche-rated Type Vps A ^DS on) Package 1> Ordering Code BUZ 21 100 V 21 A 0.085 £2 TO -220 AB C67078-S1308-A2 M axim um Ratings Param eter Continuous drain current, Tc = 25 'C

E3P102

Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.

s1308 diode

Abstract: diode s1308 S1308
Contextual Info: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N−Channel SO−8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain−to−source

s1308 diode

Abstract: S1308 diode s1308 MMSF1308R2 motorola an569 thermal AN569 MMSF1308 SMD310
Contextual Info: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MMSF1308 Low Power Surface Mount Products Single N-Channel MiniMOS Field Effect Transistor MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These

s1308 diode

Abstract: S1308 diode s1308
Contextual Info: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS Field Effect Transistor SINGLE TMOS POWER MOSFET 7 AMPERES 30 VOLTS

s1308 diode

Abstract: diode s1308 S1308 AN569 MMSF1308 MMSF1308R2
Contextual Info: MMSF1308 Preferred Device Power MOSFET 7 Amps, 30 Volts N–Channel SO–8 These miniature surface mount MOSFETs feature ultra low RDS on and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source

s1308 diode

Abstract: diode s1308
Contextual Info: MOTOROLA Order this document by MMSF1308/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MMSF1308 Low Power Surface Mount Products Motorola Preferred Device Single N-Channel MiniMOS™ Field Effect Transistor MiniMOS™ devices are an advanced series of power MOSFETs

Contextual Info: SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested

Contextual Info: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom

Contextual Info: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

Contextual Info: SiR870ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0066 at VGS = 10 V 60 0.0070 at VGS = 7.5 V 60 0.0105 at VGS = 4.5 V 60 VDS (V) 100 Qg (Typ.) 25.5 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Fixed Telecom

Contextual Info: SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switch

Contextual Info: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification

Contextual Info: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089

Contextual Info: SQD50N10-8m9L www.vishay.com Vishay Siliconix Automotive N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • Package with Low Thermal Resistance • AEC-Q101 Qualified 100 RDS(on) () at VGS = 10 V 0.0089

Contextual Info: SQP60N06-15 www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET 60 RDS(on) () at VGS = 10 V • Package with Low Thermal Resistance 0.015 ID (A) • AEC-Q101 Qualifiedd

Contextual Info: SQ4284EY www.vishay.com Vishay Siliconix Automotive Dual N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 40 RDS(on) () at VGS = 10 V 0.0135 RDS(on) () at VGS = 4.5 V 0.0148 ID (A) 8 Configuration Dual D1 SO-8 S1 1