SIR640DP Search Results
SIR640DP Price and Stock
Vishay Siliconix SIR640DP-T1-GE3MOSFET N-CH 40V 60A PPAK SO-8 |
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SIR640DP-T1-GE3 | Reel |
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SIR640DP Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIR640DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 60A SO-8 | Original |
SIR640DP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 40 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 • TrenchFET® Power MOSFET • Low Qg for High Efficiency • 100 % Rg and UIS Tested |
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SiR640DP SiR640DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
sir640
Abstract: made 314 vishay
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SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sir640 made 314 vishay | |
Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification |
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SiR640DP 2002/95/EC SiR640DP-T1-GE3 11-Mar-11 | |
SiR640DPContextual Info: SiR640DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE, |
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SiR640DP AN609, 0565m 9188m 0251m 7276m 9326m 3722m 0362m | |
Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification |
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SiR640DP 2002/95/EC SiR640DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
sir640Contextual Info: New Product SiR640DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0017 at VGS = 10 V 60 0.0022 at VGS = 4.5 V 60 Qg (Typ.) 34.6 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 D • Synchronous Rectification |
Original |
SiR640DP 2002/95/EC SiR640DP-T1-GE3 11-Mar-11 sir640 | |
PowerPAK 1212-8
Abstract: sir640 SiA442DJ SO8L PowerPAK SO-8 Si4038DY SUM90N06-02P SiS488DN
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SC-70 O-220 O-236 SiR640DP Si4038DY SiS488DN SiR662DP SUP90N06-02P SUM90N06-02P Si4062DY PowerPAK 1212-8 sir640 SiA442DJ SO8L PowerPAK SO-8 | |
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs – Low RDS on of 1.7 mΩ @ 40 V and 2.7 mΩ @ 60 V 40 V and 60 V TrenchFET Gen IV Higher Efficiency and Power Density with a Combination of Low RDS(on) and Excellent Dynamic Characteristics |
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SiR640DP Si4038DY SiS488DN SiR662DP O-220 O-263 SUP90N06-02P SUM90N06-02P Si4062DY SiJ462DP | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |