SIR846ADP Search Results
SIR846ADP Price and Stock
Vishay Siliconix SIR846ADP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR846ADP-T1-GE3 | Cut Tape | 5,887 | 1 |
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Vishay Siliconix SIR846ADP-T1-RE3MOSFET N-CH 100V 60A PPAK SO-8 |
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SIR846ADP-T1-RE3 | Reel | 3,000 |
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Vishay Intertechnologies SIR846ADP-T1-RE3N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR846ADP-T1-RE3) |
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SIR846ADP-T1-RE3 | Reel | 28 Weeks | 3,000 |
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SIR846ADP-T1-RE3 |
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SIR846ADP-T1-RE3 | Reel | 3,000 |
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Vishay Intertechnologies SIR846ADP-T1-GE3N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIR846ADP-T1-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIR846ADP-T1-GE3 | Reel | 28 Weeks | 3,000 |
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SIR846ADP-T1-GE3 | 10,476 |
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SIR846ADP-T1-GE3 | 3,000 | 3,000 |
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SIR846ADP-T1-GE3 | 3,000 | 78 Weeks | 3,000 |
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SIR846ADP-T1-GE3 | Cut Tape | 4,604 | 1 |
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SIR846ADP-T1-GE3 | Reel | 3,000 |
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SIR846ADP-T1-GE3 | 3,000 |
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SIR846ADP-T1-GE3 | 29 Weeks | 3,000 |
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SIR846ADP-T1-GE3 | 4,714 |
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SIR846ADP Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIR846ADP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A SO8 | Original | |||
SIR846ADP-T1-RE3 | Vishay Siliconix | MOSFET N-CH 100V 60A PPAK SO-8 | Original |
SIR846ADP Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: New Product SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR846ADP SiR846ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SPICE Device Model SiR846ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR846ADP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: New Product SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm |
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SiR846ADP SiR846ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switch |
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SiR846ADP SiR846ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SiR846ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0078 at VGS = 10 V 60 VDS (V) 100 0.0085 at VGS = 7.5 V 60 0.0095 at VGS = 6 V 60 Qg (Typ.) 26.7 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Primary Side Switch |
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SiR846ADP SiR846ADP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SiR846ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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SiR846ADP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy 太陽光発電 Mメインインバータ < 50 kW 4 マイクロインバータ 5 |
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VMN-MS6792-1304-AESO | |
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications Telecommunications Infrastructure Transmitters, Base Stations |
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AEC-Q101 VMN-MS6761-1212 | |
so8 footprint
Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
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SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 | |
Contextual Info: Vishay Intertechnology, Inc. Telecommunications Telecommunications Infrastructure One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Telecommunications テレコミュニケーション・ インフラ |
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AEC-Q101 VMN-MS6792-1304-TETI | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit |
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SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 | |
MKP1848S
Abstract: MKP1848S DC-Link
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VMN-MS6761-1212 MKP1848S MKP1848S DC-Link | |
N-Channel MOSFETsContextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in |
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SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs |