DIODE 914
Abstract: eeds Low Leakage Diode SMD Diode 631
Text: DESIGN CHALLENGE # 724 YOUR PORTABLE DEVICES REQUIRE LONGER BATTERY LIFE THINK EFFICIENT THINK CENTRAL TM MAXIMUM LEAKAGE CURRENT Standard Switching Diode 914 series 25nA Reverse Current T A =25˚C IR Low Leakage Diode (3003 series) 1.0nA Ultra Low Leakage Diode
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OD-523
OT-563
OD-323
OT-363
OT-23
OT-26
DIODE 914
eeds
Low Leakage Diode
SMD Diode 631
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Untitled
Abstract: No abstract text available
Text: 1N 914 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-34, DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.
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DO-34,
DO-35
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Untitled
Abstract: No abstract text available
Text: US-Lasers: 904nm-5mW - Infrared Laser Diode and Infrared Diode Laser . Page 1 of 1 US-Lasers: 904nm-5mW - Infrared Laser Diode Back to Laser Diodes INFRARED DIODE LASER DATA SHEETS ABSOLUTE MAXIMUM RATINGS - Tc=25 °C TECHNICAL DATA for LASER DIODE z Index Guided MQW Structure
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904nm-5mW
904nm
com/n904nm5m
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DBES105A
Abstract: SAS diode
Text: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for
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DBES105a
DBES105a
DSDBES1051067
-08-Mar-01
SAS diode
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SAS diode
Abstract: high frequency diode BES100 "high frequency Diode"
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications Description a - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
high frequency diode
BES100
"high frequency Diode"
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SAS diode
Abstract: "high frequency Diode" high frequency diode Monolithic System Technology BES100
Text: BES100 1.0µm Schottky Diode Process Extremely high frequency diode technology for mixer and switch applications a Description - Epitaxial Schottky diode technology - 1.0µm finger width stepper lithography - 3" wafer - Spiral inductors, MIM capacitors, TaN
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BES100
DSBES1008120
SAS diode
"high frequency Diode"
high frequency diode
Monolithic System Technology
BES100
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Untitled
Abstract: No abstract text available
Text: 1N 914 Small-Signal Diode Fast Switching Rectifier Features Silicon Epitaxial Planar Diode For general purpose and switching Mechanical Data Case: DO-35 Glass Case Weight: approx. 0.13g Maximum Ratings and Thermal Characteristics TA=25oC unless otherwise noted.
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DO-35
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monolitic R 38
Abstract: No abstract text available
Text: SIEMENS B B 914 Silicon Variable Capacitance Diode • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking • Good linearity of C-V curve
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Q62702-B673
OT-23
monolitic R 38
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IRF7422D2
Abstract: No abstract text available
Text: PD- 91412J IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A
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91412J
IRF7422D2
IRF7422D2
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BLM21A102S
Abstract: SY88902 SY88903 SY88904 SY88904KC SY88922 SY88993 laser Functional Block Diagram and laserdiode application automatic light control with PIN photo diode CIRCUIT DIAGRAM
Text: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit
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SY88903
SY88902
16-pin
SY88904
SY88902
SY88903
SY88904
K16-1)
BLM21A102S
SY88904KC
SY88922
SY88993
laser Functional Block Diagram and
laserdiode application
automatic light control with PIN photo diode CIRCUIT DIAGRAM
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1N4007 diode SOD 80
Abstract: 1N4148 SMA 2n2222a SOT23 smd 2n3055 2N2369 SOT-23 2n3904 smd 2n3055 SOT-23 TIP41 SOT23 2N6520 sot23 SMD DIODE 1N4006
Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 BAS28 CLL914 CMPD 914 CMPD2836 CMPD2838 CMPD7000 SOT-143 SOD-80 SOT-23 SOT-23 SOT-23 SOT-23 Dual, Isolated Leadless Switching Diode Single Switching Diode Dual, Common Anode Dual, Common Cathode
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BAS28
CLL914
CMPD2836
CMPD2838
CMPD7000
CLL4448
CMPD4448
BAS56
CLL4150
CMPD4150
1N4007 diode SOD 80
1N4148 SMA
2n2222a SOT23
smd 2n3055
2N2369 SOT-23
2n3904 smd
2n3055 SOT-23
TIP41 SOT23
2N6520 sot23
SMD DIODE 1N4006
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IRF7422D2
Abstract: No abstract text available
Text: PD- 91412J IRF7422D2 PRELIMINARY FETKY TM MOSFET & Schottky Diode l l l l l l Co-packaged HEXFETÒ Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D
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91412J
IRF7422D2
IRF7422D2
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Untitled
Abstract: No abstract text available
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
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DBES105a
DBES105a
DSDBES105a6354
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Ethernet to fiber optic converter circuit
Abstract: SY88993 BLM21A102S SY88902 SY88903 SY88904 SY88904KC SY88922 operational amplifier k161 K161
Text: FIBER OPTIC MODULE CONTROLLER WITH APC DESCRIPTION FEATURES • DC bias current adjustable to 25mA ■ Buffered Loss-of-Signal output when used with SY88903 ■ Controlled laser diode turn on ■ Laser diode over-current detect ■ Monitor diode power control circuit
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SY88903
SY88902
16-pin
SY88904
SY88902
SY88903
SY88904
K16-1)
Ethernet to fiber optic converter circuit
SY88993
BLM21A102S
SY88904KC
SY88922
operational amplifier k161
K161
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DBES103
Abstract: DBES110 DIODE 33 25 dual diode anode-cathode SAS diode
Text: DBES103/110 Flip-Chip Dual Diode GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.
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DBES103/110
DBES103/110
DSDBES1038211
DBES103
DBES110
DIODE 33 25
dual diode anode-cathode
SAS diode
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1N4937 SMD
Abstract: diode 1n4007 melf smd 2n5401 smd 1n4001 melf diode 1n4007 melf 2n2222a SOT223 1N4148 SOD-80 2n2222a SOT23 1N5819 SOD80 2N2369 SOT-23
Text: Leaded to Surface Mount Equivalents LEADED SMD CASE COMMENTS 1N 914 CMPD 914 CLL914 CMPD28:i6 CMPD28IÌ8 CMPD7000 BAS28 SOT-23 SOD-80 SOT-23 SOT-23 SOT-23 SOT-143 Single Switching Diode Leadless Switching Diode Dual, Common Anode Dual, Common Cathode Dual, In Series
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CLL914
CMPD28
CMPD28I
CMPD7000
BAS28
CMPD4448
CLL4448
CMPD41
CLL4150
BAS56
1N4937 SMD
diode 1n4007 melf smd
2n5401 smd
1n4001 melf
diode 1n4007 melf
2n2222a SOT223
1N4148 SOD-80
2n2222a SOT23
1N5819 SOD80
2N2369 SOT-23
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DIODE 914
Abstract: 914 DIODE
Text: SMBD 914 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking SMBD 914 s5D Pin Configuration 1=A 2 n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage
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VPS05161
EHA07002
OT-23
40m25V
EHB00112
EHB00113
Oct-14-1999
EHB00114
DIODE 914
914 DIODE
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1N4149
Abstract: 1N4150 1N4151 1N4152 1N4153 1N4447 1N4449 1N914 1N44491
Text: 1N 914 .1N 4454 SILICON EPITAXIAL PLANAR DIODE Silicon Expitaxial Planar Diode for general purpose and switching. The types 1N4149, 1N4447 and 1N4449 are also availble in glass case DO-34. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Dimensions in mm Dimensions in mm
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1N4149,
1N4447
1N4449
DO-34.
DO-35
DO-34
1N914
1N41491*
1N44491'
1N4450
1N4149
1N4150
1N4151
1N4152
1N4153
1N44491
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semiconductor
Abstract: hirect H507CH Hirect diode H400TB
Text: SEMICONDUCTOR DESIGN GUIDE Hind Rectifiers Ltd ISO 9001-2000 Contents Page no. ► Rectifier Diodes 1 Top Hat Type 2) Capsules and Fast Recovery Diode 3) Modules Isolated Base) a) Diode-Diode Modules b) Single Phase Bridge c) Three Phase Bridge 1 3 5 5 5
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VPS05161
Abstract: a1 sot-23
Text: BB 914 Silicon Variable Capacitance Diode 3 • For FM radio tuner with extended frequency band • High tuning ratio low supply voltage car radio • Monolitic chip (common cathode) for perfect dual diode tracking 2 • Good linearity of C - V curve • High figure of merit
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VPS05161
OT-23
Oct-05-1999
/CT28
VPS05161
a1 sot-23
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VPS05161
Abstract: No abstract text available
Text: BB 914 Silicon Variable Capacitance Diode 3 For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio Monolitic chip (common cathode) for perfect dual diode tracking 2 Good linearity of C - V curve High figure of merit
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VPS05161
OT-23
Dec-08-2000
VPS05161
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IRF7422D2
Abstract: MS-012AA IRF74
Text: PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF Schottky Rectifier Generation 5 Technology SO-8 Footprint A A D 1 8 A 2 7 D S 3 6 D 4
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91412L
IRF7422D2
EIA-481
EIA-541.
IRF7422D2
MS-012AA
IRF74
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Untitled
Abstract: No abstract text available
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating
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DBES105a
DBES105a
DSDBES105a6354
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DBES105A
Abstract: DIODE BP dual diode mixer DBES105a99F
Text: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating
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DBES105a
DBES105a
DSDBES105a6354
DIODE BP
dual diode mixer
DBES105a99F
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