1N4152 Search Results

Contextual Info: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current IO Forward surge current, 8.3ms Operating junction temperature range

1N4152

Abstract: Diode 1n4152 DO-204AH
Contextual Info: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.

Contextual Info: 1N4152, 1N4305, 1N4444 COMPUTER DIODE Switching FEATURES • Metallurgical Bond 1N4152 1N4305 • Planar Passivated Peak Reverse V oltage. 4 0 V .7 5 V .70V . • DO-35 Package Reverse Working V oltag e . 3 0 V .5 0 V .50V .

1N4152

Abstract: DO-204AH Diode 1n4152
Contextual Info: Certificate TH97/10561QM 1N4152 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max.

In5062

Abstract: in 5062 1N4007W 1N4007 toshiba diode 1n4007 toshiba SCR 1 c106d 1N4004 toshiba 1N5059 diode scr 2n6396 1N4007 rectifier diode
Contextual Info: 9097250 TOSHIBA CDI S C R E T E /O P T O TOSHIBA -CDISCRETE/OPTOJ 9 0D 16494 DE § /3 □OlkMTM 7 Diodes Switching Diode DO-35) VB(V) lo(MA) 2 5 (3 0 ) 50 1N4152 1N4150 1N 4151 1N 4153 \ 150 200 70 1N4150 1N 4606 50 70 75 1 N 914, A , B 1 N 916, A , B 1 N 4149

Contextual Info: 1N4152 HIGH SPEED SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark MECHANICAL DATA : 1.00 (25.4) min.

1n4153

Abstract: DSAIH0002540
Contextual Info: / □BE D I 1 1 ? 3 B K C INTERNATIONAL QQDGSÛ5 T | ~ 7 -0 3 -Ô 1 HIGH SPEED DIODES 1N4151 1N4153 • 1N4152 1N4154 ABSOLUTE MAXIMUM RATINGS • T_ • C 2.0 ns @ 10 mA, -6V, 100Î2 4 pF .0 2 0 * D IR Storage Temperature Range Maximum Junction Operating Temperature

1N4152

Abstract: 7121 1N4152 fairchild
Contextual Info: 1N4152 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Units Maximum Repetitive Reverse Voltage 40 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg Non-repetitive Peak Forward Surge Current

1N4152

Abstract: 1N4152M LL4152
Contextual Info: SynSEMi 5YM5EMI 5EMIC0HDUCT0R_ 1N4152 1N4152M LL4152 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics S ym bol t a = 25°c unless otherwise noted.) P aram eter L im its T est C o n d itio n

Switching

Abstract: 1N3065 1n914 equivalent 1N3605 1N4151 equivalent 1N3062 1N4153 silicon diodes 1N4863 datasheets diode 1n3064 1N3063
Contextual Info: Silicon Diodes DO-35 Case Switching Diodes TYPE NO. 1N914 1N914B 1N3062 1N3063 1N3064 1N3065 1N3600 1N3604 1N3605 1N4148 1N4150 1N4151 1N4152 1N4153 1N4154 1N4444 1N4446 1N4447 1N4448 1N4449 1N4454 1N4863 1N4864 VRRM V MAX 100 100 75 75 75 75 50 40 75 100

Contextual Info: 1N4152 Small Signal Switching Diode. Peak Reverse Voltage VRM = 40 V. Maximum . Page 1 of 1 Enter Your Part # Home Part Number: 1N4152 Online Store 1N4152 Diodes Small Signal Switching Diode. Peak Reverse Voltage VRM Transistors = 40 V. Maximum Average Rectified Current IAV = 150 MA.

DO-35 PACKAGE

Abstract: DSAIH000251
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

Contextual Info: One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 1N4152 DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Parameter Symbol VfiRM TA=25-0Unie«otn«wisenoted Value

1N4444

Abstract: diode 1n4305 1N4152 1N4305 diode DO35 2Ns
Contextual Info: 1N4152, 1N4305, 1N4444 COMPUTER DIODE Switching A B S O L U T E M A X IM U M RA T IN G S , A T 25 °C FEATU RES • M e ta llu rg ica l Bond # P la n a r P a ssiva te d . 00.35 p a c ka g e 1N4152 1N4305 1N4444 P e a k R everse V o lt a g e .4 0 V . 7 5 V .7 0 V .

1N4151

Abstract: 1N4153 1N4152 1N4154
Contextual Info: □ BE D I 1 1 7 3 B K C INTERNATIONAL 0DDGEÛ5 T |"~ T-Ô3-Ô7 HIGH SPEED DIODES 1N4151 1N4153 • 1N4152 • 1N4154 ABSOLUTE MAXIMUM RATINGS • T_ • C 2.0 ns @ 10 mA, -6V, 1000 4 pF . 0 2 0 * D IR Storage Temperature Range Maximum Junction Operating Temperature

1N4007 TOSHIBA

Abstract: diode 1n4007 toshiba IN5625 IN5060 diode scr C106D MAC525-6 1N4004 toshiba C122B 1n914 surface mount diode 1N4148 surface mount
Contextual Info: 9097250 T OS H I B A CD I S C R E T E / O P T O > TOSHIBA iDISCRETE/0PT0> 90D 16494 D Tzòt~ ts DE l'iO'iTSSO 001b4TM 7 T 'O -b 'O ? Diodes Switching Diode DO-35 VB(V) 2 5 (3 0 ) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B

IN5062

Abstract: IN5625 scr C106B LN4007 diode in5061 in5625 diode in5626 IN5060 IN5624 IN5060 diode
Contextual Info: Diodes Switching Diode DO-35 V„(V) 25(30) lo(MA) 1N4152 1N4150 150 70 50 1N4151 1N4153 200 1N4150 1N4606 50 70 75 1N914, A, B 1N916, A, B 1N4149 1N4446 1N4447 1N4448 1N4449 1N4148 Surface M ount Diode V„(V) 30 Iq(MA) DLN4152 150 75 DLN914, A, B DLN916, A, B

1N4152

Abstract: in4305 1N4305 1N4444 Diode 1n4152
Contextual Info: COMPUTER DIODE 1N4152, 1N4305, 1N4444 Switching FEATURES • Metallurgical Bond • Planar Passivated • DO-35 Package DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25 °C

Diode 1n4152

Abstract: 1N4152
Contextual Info: 1N4152, 1N4305, 1N4444 COMPUTER DIODE Sw itching ABSOLUTE MAXIMUM RATINGS, AT 25 "C 1N4152 1N4305 1N4444 Peak Reverse V o lta g e . 40V 75V 70V. Reverse Working V o lta g e. 3 0 V . 5 0 V . 50V .

1N4152

Abstract: 41S21
Contextual Info: TYPES 1N4151 THRU 1N4154 SILICON SWITCHING DIODES BU LL ET IN NO. DL-S 699270, O CTOBER 1 9 6 6 -R E V IS E D AU G U ST 1969 F A S T S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents 1N4151 . . 1N3604 1N4152 . . 1IM3605 . . . 1N4533

1N4009

Abstract: BKC666 1N4938 1N625 1N914 1N914A BAW75 BAW76 BKC600 BKC900
Contextual Info: B K C INTERNATIONAL 3 Silicon Switching !Diodes for Computer Applications in DO-35 Package I Type BAW75 BAW76 BKC600 BKC666 BKC900 BKC999 1N625 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N41S4 1N4446

1N4536

Abstract: 1n4531
Contextual Info: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

914B

Abstract: 1N3600 DO-35 1n4147 IR D4-D4 IR diode D4-D4 1N3064 1N4009 1N625 1N914A
Contextual Info: NATL S E M ICONO HE D IS C R E T E D I National Semiconductor t.S Q H 3 Q 0031^0 B | g T-OI-OÌ * sr Computer Diodes Glass Package VF V c *rr na Max Teat Cond. Proc. No. 1000 (Note 1) D4 4 (Note 2) D4 20 4 (Note 2) D4 0.72 1.0 5 100 4 (Note 2) D4 20 75 1.0