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    BAS28 Price and Stock

    Diodes Incorporated BAS28-7

    DIODE ARRAY GP 85V 215MA SOT-143
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    DigiKey () BAS28-7 Cut Tape 35,367 1
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    BAS28-7 Digi-Reel 35,367 1
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    BAS28-7 Reel 33,000 3,000
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    Avnet Americas BAS28-7 Reel 12 Weeks 3,000
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    Mouser Electronics BAS28-7 12,987
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    Avnet Silica BAS28-7 3,000 10 Weeks 3,000
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    IBS Electronics BAS28-7 42,000 3,000
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    Vishay Semiconductors BAS285-GS08

    DIODE SCHOT 30V 200MA SOD80
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    DigiKey () BAS285-GS08 Cut Tape 13,717 1
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    BAS285-GS08 Digi-Reel 13,717 1
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    BAS285-GS08 Reel 12,500 2,500
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    Vishay Semiconductors BAS286-GS08

    DIODE SCHOT 50V 200MA SOD80
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    DigiKey () BAS286-GS08 Cut Tape 13,321 1
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    BAS286-GS08 Digi-Reel 13,321 1
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    BAS286-GS08 Reel 12,500 2,500
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    Diodes Incorporated BAS28Q-13

    DIODE ARRAY GP 85V 215MA SOT-143
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    DigiKey BAS28Q-13 Cut Tape 9,639 1
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    Mouser Electronics BAS28Q-13 7,310
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    Newark BAS28Q-13 Cut Tape 3,730 5
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    TME BAS28Q-13 1
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    Avnet Silica BAS28Q-13 10,000 10 Weeks 10,000
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    New Advantage Corporation BAS28Q-13 10,000 1
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    Vishay Semiconductors BAS281-GS08

    DIODE SCHOTTKY 40V 30MA SOD80
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    DigiKey () BAS281-GS08 Digi-Reel 4,794 1
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    BAS281-GS08 Cut Tape 4,794 1
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    BAS281-GS08 Reel 2,500 2,500
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    BAS28 Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAS28
    Central Semiconductor DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Original PDF
    BAS28
    Infineon Technologies DIODE SWITCHING 85V 0.2A 4SOT-143 Original PDF
    BAS28
    Infineon Technologies Silicon Switching Diode Array for high-speed switching Original PDF
    BAS28
    Infineon Technologies High Speed Switching Diodes; Package: PG-SOT143-4; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 100.0 nA; trr (max): 4.0 ns; Original PDF
    BAS28
    Kexin High Speed Double Diode Original PDF
    BAS28
    NXP Semiconductors BAS28 - High-speed double diode - Cd max.: 1.5 pF; Configuration: dual isolated ; IF max: 215 mA; IFSM max: 4 A; IR max: 1000@VR=75V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 75 V Original PDF
    BAS28
    Philips Semiconductors High-speed double diode Original PDF
    BAS28
    Philips Semiconductors Silicon Planar Epitaxial High-Speed Diode Original PDF
    BAS28
    Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BAS28
    Siemens Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) Original PDF
    BAS28
    TY Semiconductor High Speed Double Diode - SOT-143 Original PDF
    BAS28
    Central Semiconductor DUAL, ISOLATED HIGH SPEED SWITCHING DIODE Scan PDF
    BAS28
    Central Semiconductor SURFACE MOUNTED DEVICES Scan PDF
    BAS28
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAS28
    Philips Semiconductors High-speed double diode Scan PDF
    BAS281
    Vishay Intertechnology Schottky Barrier Diode Original PDF
    BAS281
    Vishay Semiconductors Small SIgnal Schottky Barrier Diodes Original PDF
    BAS281-GS08
    Vishay Intertechnology Small SIgnal Schottky Barrier Diode Original PDF
    BAS281-GS18
    Vishay Semiconductors Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY SOD80 Original PDF
    BAS282
    Vishay Intertechnology Schottky Barrier Diode Original PDF

    BAS28 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BAS286

    Abstract: BAS286-GS08
    Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009


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    BAS286 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 BAS286 BAS286-GS08 PDF

    Contextual Info: Product specification BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r VR 75 V P e a k re ve rs e vo lta g e


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    BAS28W OT-343 PDF

    Contextual Info: _ BAS286 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forw ard voltage Applications A pplications w here a ve ry low forw ard voltage is required Absolute Maximum Ratings


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    BAS286 x50ve D-74025 01-Apr-99 PDF

    BAS28 nxp

    Abstract: BAS28 diode Marking code v3
    Contextual Info: BAS28 High-speed double diode Rev. 3 — 22 July 2010 Product data sheet 1. Product profile 1.1 General description Two high-speed switching diodes fabricated in planar technology, and encapsulated in a small SOT143B Surface-Mounted Device SMD plastic package. The diodes are not


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    BAS28 OT143B AEC-Q101 BAS28 nxp BAS28 diode Marking code v3 PDF

    Contextual Info: BAS281 / 282 / 283 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diodes Features • • • • • Integrated protection ring against static discharge Low capacitance Low leakage current Low forward voltage drop Very low switching time 9612009


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    BAS281 OD-80) BAS282 BAS283 08-Apr-05 PDF

    Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge • Very low forward voltage • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 9612009


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    BAS286 AEC-Q101 2002/95/EC 2002/96/EC OD-80 GS18/10 GS08/2 BAS286 BAS286-GS18 BAS286-GS08 PDF

    BAS286

    Abstract: BAS286-GS08
    Contextual Info: BAS286 Vishay Semiconductors Small Signal Schottky Diode Features • Integrated protection ring against static discharge e2 • Very low forward voltage • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 9612009


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    BAS286 2002/95/EC 2002/96/EC GS18/10 GS08/2 BAS286-GS18 BAS286-GS08 18-Jul-08 BAS286 BAS286-GS08 PDF

    85500 transistor

    Abstract: BAS281 BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80
    Contextual Info: BAS281 / 282 / 283 Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead Pb -free component


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    BAS281 2002/95/EC 2002/96/EC 18-Jul-08 85500 transistor BAS281-GS08 BAS282 BAS283 general semiconductor DIODE SOD80 PDF

    Contextual Info: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.


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    BAS28 BAS28 BAW62; PDF

    85500 transistor

    Abstract: K 85500 BAS281 BAS282 BAS283
    Contextual Info: BAS281.BAS283 Vishay Telefunken Schottky Barrier Diodes Features D Integrated protection ring against static discharge D D D D Low capacitance Low leakage current Low forward voltage drop Very low switching time 96 12009 Applications General purpose and switching


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    BAS281. BAS283 BAS281 BAS282 D-74025 01-Apr-99 85500 transistor K 85500 BAS281 BAS282 BAS283 PDF

    oscilloscope pc

    Abstract: BAS28 BAW62
    Contextual Info: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.


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    bbS3S31 0Q24B7Ã BAS28 BAS28 oscilloscope pc BAW62 PDF

    Contextual Info: BAS285 VISHAY Vishay Semiconductors Small Signal Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required 9612009 Mechanical Data


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    BAS285 OD-80) BAS285 BAS285-GS18 BAS285-GS08 D-74025 16-Mar-04 PDF

    marking CODE JTS

    Abstract: BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420
    Contextual Info: BAS28. Silicon Switching Diode • For high-speed switching applications • Electrical insulated diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAS28/W " ! ,  ,  Type Package Configuration Marking BAS28 BAS28W SOT143 SOT343


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    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, marking CODE JTS BAS28 marking CODE JTS 56 BAS28W BFP181 BGA420 PDF

    BAS28

    Contextual Info: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


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    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, PDF

    marking CODE JTS

    Abstract: BAS28
    Contextual Info: BAS28. Silicon Switching Diode  For high-speed switching applications  Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified


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    BAS28. BAS28/W BAS28 BAS28W OT143 OT343 BAS28, BAS28W, marking CODE JTS PDF

    1N4148 SOD-80

    Abstract: 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6
    Contextual Info: SMD Switching Diodes TYPE MO. CASE DESCRIPTION BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 C M PD 914 CMPD1001 CMPD1001A SOT-143 SOT-143 SOD-80 SOD-00 SOD-BO SOD- 80 SOD-BO SOT-23 SOT-23 SOT-23 CMPD1001S CMP02003 CMPD2004 CMPD2004S SOT-23 SOT-23 SOT-23


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    BAS28 BAS56 CLL914 CLL2003 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A 1N4148 SOD-80 1N SERIES DIODE SMD diode C5C smd diode A82 DIODE smd marking MO smd diode j SMD diode CA2 L21 SMD DIODE 914 SMD diode Ca6 PDF

    a61 "sot143"

    Contextual Info: Central BAS28 Semiconductor Corp. DUAL, ISOLATED HIGH SPEED SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 type is a ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in an epoxy molded surface mount package with isolated dual diodes, designed


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    BAS28 OT-143 150mA 500i2 a61 "sot143" PDF

    Js SMD MARKING CODE SOT23

    Abstract: SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm
    Contextual Info: SMD Switching Diodes TYPE NO. CA SE DESCRIPTION BAS28 BAS56 C L L 914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CM PD914 C M P D IO O I C M P D IO O I A SO T -143 SO T -143 S O D -8 O SO D -8O S O D -8O S O D -8 O S O D -8 O SOT-23 SOT-23 SOT-23 C M P D IO O IS CM P02003


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    BAS28 BAS56 CLL914 CLL2CJ03 CLL4150 CLL4448 CLL5001 CMPD914 CMPD1001 CMPD1001A Js SMD MARKING CODE SOT23 SMD MARKING CODE M 4 Diode smd diode A82 1N4148 diode SMD marking 46 sot-23 DIODE SMD MARKING 5C SOT23 DIODE marking CODE 28 sot-23 MARKING AAD marking A82 SOT-23 Diode smd code cm PDF

    K 85500

    Abstract: 85500 BAS281
    Contextual Info: BAS281 .BAS283 Vishay Telefunken Schottky Barrier Diodes Features • Integrated protection ring against static discharge • • Low capacitance Low leakage current • Low forward voltage drop • Very low switching time Applications General purpose and switching


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    BAS281 BAS283 BAS281 BAS282 01-Apr-99 K 85500 85500 PDF

    BAS286

    Contextual Info: BAS286 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 96 12009 Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter


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    BAS286 50mmx50mmx1 D-74025 01-Apr-99 BAS286 PDF

    BAS285

    Contextual Info: BAS285 Vishay Semiconductors Small Signal Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 96 12009 Applications where a very low forward voltage is required Order Instruction Type


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    BAS285 BAS285 D-74025 12-Feb-01 PDF

    JTs smd diode

    Abstract: smd diode marking Ja smd JS marking JTs datasheet mv 103 smd diode UM BAS28W th460 smd marking SOT343
    Contextual Info: Diodes SMD Type Silicon Switching Diode Array BAS28W SOT-343 Unit: mm Features For high-speed switching applications Electrical insulated diodes A b s o lu te M a x im u m R a tin g s T a = 2 5 S ym b o l V a lu e U n it D io d e re ve rs e vo lta g e P a ra m e te r


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    BAS28W OT-343 JTs smd diode smd diode marking Ja smd JS marking JTs datasheet mv 103 smd diode UM BAS28W th460 smd marking SOT343 PDF

    JT MARKING

    Abstract: BAS28
    Contextual Info: Diodes SMD Type High-Speed Double Diode BAS28 Unit: mm Features Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:max. 75 V Repetitive peak reverse voltage:max. 85 V Repetitive peak forward current:max. 500 mA . Absolute Maximum Ratings Ta = 25


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    BAS28 JT MARKING BAS28 PDF

    JTW "sot143"

    Abstract: MARKING CODE jtw marking jtw sot marking CODE JTW diode a61 "sot143" MARKING CODE R7 DIODE BAS28 marking jtw
    Contextual Info: BAS28 SURFACE MOUNT DUAL, ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BAS28 consists of two electrically isolated ultra-high speed silicon switching diodes manufactured by the epitaxial planar


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    BAS28 BAS28 OT-143 OT-143 150mA 20-October JTW "sot143" MARKING CODE jtw marking jtw sot marking CODE JTW diode a61 "sot143" MARKING CODE R7 DIODE marking jtw PDF