DIODE 7B4 Search Results

Contextual Info: 83633^4 DDDD718 7b4 • BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BAS29- L20 BAS31 - L21 BAS35 - L22

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

Contextual Info: GEC PL E SSEY w , S E M I C O N D U C T O R S DS4412-1.2 DSF8035SK FAST RECOVERY DIODE APPLICATIONS KEY PARAMETERS 3500V RRM 335A ¡F AV 3500A ' fsm v • Snubber Diode For GTO Applications. 400(iC 4.0|JS Q r FEATURES ■ Double side cooling. ■ High surge capability.

Contextual Info: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short

3A/itas 3-415

Contextual Info: SIEMENS IRM3401/3402/3405/3415 Infrared Data Transceiver Preliminary IRM340S IRM3401 FEATURES • Meets All Applicable IrDA Specifications • IrDA Data Rates Up to 4.0 Mb/s • Wide Dynamic Range • Differential PIN Diode Input for Superior Interference Rejection

EB41

Contextual Info: EB41 PH ILIPS D O UBLE DIODE with separate cathodes DIO D E DOUBLE avec cathodes séparées DOPPELDIODE mit getrennten Kathoden Heating: indirect by A.C. or D.C.; parallel supply Chauffage: indirect par C.A. ou C.C.; alimentation en parallèle Heizung: indirekt

2508D

Abstract: BU2508D
Contextual Info: Philips Semiconductors Product specification Silicon diffused power transistor BÜ2508D GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.

unitrode UM6202

Abstract: Unitrode Semiconductor UM6606 UM6204
Contextual Info: NICROSEflI CORP/ UATERTOÜIN 5QE D • PIN DIODE cJ3M7clb3 00123=17 312 M U N IT UM6000 SERIES UM6200 SERIES UM6600 SERIES Features • Capacitance specified as low as 0.4 pF UM6600 • Resistance specified as low as 0.4Q (UM6200) • Voltage ratings to 1000V

Contextual Info: O K I electronic components 0PA256C-1 Self-Scanning Line Sensor GENERAL DESCRIPTION The OPA256C-1 is a 256-bit, 1-dimensional diode array com prised of PN junction photodetector diodes and CCDs charge coupled devices . By using a 2-phase clock pulse, transfer pulse, an d reset

a325l

Contextual Info: ÖUALITY SEMICONDUCTOR INC bSE D • 74t.bäG3 Q D G 1 2 b S 7b4 QSFCT646T, 648T, 2646T, 2648T Q S54/74FC T646T FEATURES/BENEFITS • Pin and function compatible to the 74F646/8 74FCT646/8 and 74FCT646T/8T • CMOS power levels: <7.5 mW static ■ Available in DIP, ZIP, SOIC, QSOP, LCC

em 513 diode

Abstract: H737
Contextual Info: PLESSEY SE MICO ND UC TO RS TS D E | 7S5DS13 D00t.7B4 T | 7 2 20513 P L E S S E Y S E M I C O N D U C T O R S 95D 06734 PLESSEY D PRELIMINARY INFORMATION S e m ic o n d u c to rs MV61903 y~ ' y < s ~ y s ' 1K X 9 PARITY FIFO The MV61903 is one of a new generation of RAM-based

a1p diode

Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot
Contextual Info: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.

m574

Contextual Info: BUZ 103 SIEMENS SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • du/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs BUZ103 50 V Id 40 A ^DS on Package Ordering Code

Contextual Info: International 1 IIRectifier P D 9 .1 4 1 0 IRFP044N PRELIMINARY HEXFET® Power MOSFET I IT Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description Generations HEXFETsfrom IntemationalRectifier

SML1002RCN

Abstract: 1002rcn 1002R sml1002r4CN
Contextual Info: SEHELAB bGE D PLC 0133107 GDOGTRG fi2fl « S M L B Mil FFË SEME MOS POWER 1 4 "T-3C1- im 1000V 900V 1000V 900V SML1002RCN SML902RCN SML1002R4CN SML902R4CN LAB 5.5A 5.5A 5.0A 5.0A 2.00Q 2.0012 2.4012 2.4012 N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

irfp350

Contextual Info: N-CHANNEL POWER MOSFETS IRFP350/351 FEATURES • Lower R dsion • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

kmp 31

Contextual Info: J r r L r u / n m . T E C H N O L O G Y LT1375/LT 1376 1.5A, 500kHz Step-Down Switching Regulators F€flTUfl€S • Constant 500kHz Switching Frequency is current mode for fast transient response and good loop stability. Both fixed outputvoltage and adjustable parts are

LM259BT-5

Abstract: CJ125 LM259 180mf 16v VM25 LM259BT
Contextual Info: « May 1996 LM2598 SIMPLE SWITCHER Power Converter 150 kHz 1A Step-Down Voltage Regulator, with Features General Description by current. Self protection features include a two stage cur­ rent limit for the output switch and an over temperature shutdown for complete protection under fault conditions.

7B468

Abstract: 7B465 76465 75469 sn75466 sn75465
Contextual Info: SN75465 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS D 2 6 2 5 , DECEMBER 1 9 7 6 -REVISED SEPTEMBER 1 9 8 6 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRA YS 500-mA Rated Collector Current Single Output D OR N P A C K A G E (TO P V IEW ! • High-Voltage Outputs . . . 100 V

7B423

Contextual Info: ADVANCE INFORMATION PI74ALVTC16344

6B4 diode

Abstract: diode 7B4 PI74ALVTC16344A PI74ALVTC16344K
Contextual Info: PI74ALVTC16344

Contextual Info: /TLin^AB _ LT1103/Lm05 TECHNOLOGY o fflin e S w itc h in g R e g u la to r FCmUIKS D€SCRIPTIOn • ±1% Line and Load Regulation with No Opto-Coupler ■ Switch Frequency up to 200kHz ■ Internal 2A Switch and Current Sense LT1103 ■ Internal 1A Totem Pole Driver (LT1105)

BU506DF

Abstract: BU506F
Contextual Info: I I N AMER PHILIPS/DISCRETE b'iE » • bbSa'ìai 3 Jl 0DEÖES7 T U J ■ APX BU506F BU506DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn transistor in a SOT186 envelope, intended fo r use in horizontal deflection circuits o f colour television receivers and in line-operated switch-mode applications.

Contextual Info: FR 1A.FR IM Fast Switching Surface Mount Si-Rectifier Schnelle Si-Gleichrichter für die Oberflächenmontage Nominal current Nennstrom 0.6 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50. 1000 V Plastic case Kunststoffgehäuse 1 il