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SOT-23 a1p Abstract: marking ALP BAW56 BAW62 diode Rl 257 Text: • I b b sa^ ai DDEMaTl 371 « a p x N AMER PHILIP S/DISCRETE BAW56 b7E D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW 56 consists o f tw o diodes in a m icro m in ia tu re plastic envelope. The anodes are com m oned and th e u n it is intended fo r high-speed sw itch in g in th ic k and th in -film circuits.	OCR Scan	PDF	BAW56 BAW56 SOT-23 a1p marking ALP BAW62 diode Rl 257
oscilloscope pc Abstract: BAS28 BAW62 Text: • bbS3S31 N AHER 0Q24B7Ö TS7 H A P X PHILIPS/DISCRETE b7E BAS28 D SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icro m in ia tu re envelope intended fo r surface m ou n tin g . It concerns fast-sw itching general-purpose diodes.	OCR Scan	PDF	bbS3S31 0Q24B7Ã BAS28 BAS28 oscilloscope pc BAW62
Untitled Abstract: No abstract text available Text: b3E » • bb53cl31 DDEbl^fi 74*3 H A P X BAS16 N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE Silicon epitaxial high-speed diode in a microminiature plastic envelope. It is intended for high-speed switching in hybrid thick and thin-film circuits.	OCR Scan	PDF	bb53c BAS16 BAW62; 7Z65148
a1p diode Abstract: BAW62 SOT23 7Z65148 BAW56 BAW62 12p sot-23 a1p sot Text: 7110Ä5b DDbß3S7 17T M P H I N BAW56 7 V. SILICON PLANAR EPITAXIAL HIGH-SPEED DIODES The BAW56 consists of two diodes in a microminiature plastic envelope. The anodes are commoned and the unit is intended for high-speed switching in thick and thin-film circuits.	OCR Scan	PDF	BAW56 a1p diode BAW62 SOT23 7Z65148 BAW62 12p sot-23 a1p sot