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    em 513 diode

    Abstract: H737
    Text: PLESSEY SE MICO ND UC TO RS TS D E | 7S5DS13 D00t.7B4 T | 7 2 20513 P L E S S E Y S E M I C O N D U C T O R S 95D 06734 PLESSEY D PRELIMINARY INFORMATION S e m ic o n d u c to rs MV61903 y~ ' y < s ~ y s ' 1K X 9 PARITY FIFO The MV61903 is one of a new generation of RAM-based


    OCR Scan     		PDF 7S5DS13 MV61903 MV61903 2200mW em 513 diode H737

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICONDUCTORS 12E D • 7220S13 0D1D335 4 " P -q s -w -o £ SP8685AC 500MHz -r 10/11 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8685 is an compatible outputs. control inputs, PE1 when both are 'low' ECL variable modulus divider, with 10K


    OCR Scan     		PDF 7220S13 0D1D335 SP8685AC 500MHz MIL-STD-883C SP8685 MIL-M-38510 300mV T-90-20 7EE0513

    bubble memory plessey

    Abstract: No abstract text available
    Text: PLESSEY SEMICO ND UC TO RS TS D e | 722D513 DOObbflfl b |~~ 7220513 P L E S S E Y S E M I C O N D U C T O R S 95D 06688 D/^y^ßS PRELIMINARY INFORMATION MV66030 64-WORD X 9-BIT FIRST-IN FIRST-OUT MEMORY The MV66030 is an asynchronousflrst-in first-out memory,


    OCR Scan     		PDF 722D513 MV66030 64-WORD MV66030 MV66030-10 MV66030-25 bubble memory plessey

    TDA2085A

    Abstract: EDX1000 transistor 700w amplifier circuit diagram TDA2085 closed loop universal motor SPEED
    Text: PLESSEY SEMICONDUCTORS 15 7220513 PLESSEY SEMICONDUCTORS System Design . Throughout this section, component references are those shown on the Reference System Circuit Diagram, Fig.4. OPEN LOOP OPERATION The simplest method of motor speed control using


    OCR Scan     		PDF TDA2085A ub801 EDX1000 transistor 700w amplifier circuit diagram TDA2085 closed loop universal motor SPEED

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICONDUCTORS TS D E I 7250513 7 2 2 0 5 1 3 PLESSEY SEMICONDUCTORS DDGtb'iS 95D 0 6 6 9 5 B J~~ 0/~-%~3S PRELIMINARY INFORMATION Sem iconductors i MV65030 64-WORD x 9-BIT FIRST-IN FIRST-OUT MEMORY SUPERSEDES MARCH 1987 EDITION The MV65030 is an asynchronous first-in first-out memory,


    OCR Scan     		PDF MV65030 64-WORD MV65030 MV65030-25 MV65030-35

    PLESSEY CLA

    Abstract: full adder circuit using nor gates Plessey PLESSEY CLA2000 CLA21XX CLA2000 SERIES plessey semi-custom
    Text: PLESSEY SEMICONDUCTORS tS 7220513 PLESSEY SEMICONDUCTORS A PLESSEY w ' Semiconductors. Ï Ë| 7SH0S13 DODSSMfl 7 65C 05548 D /P ^ T-42-11-09 _CLA2000 series MICROGATE-C 1 CLA2000 SERIES Microgate-C is a semi-custom design technique for the production of gate arrays on Plessey Semiconductors high


    OCR Scan     		PDF 7SH0S13 T-42-11-09 CLA2000 PLESSEY CLA full adder circuit using nor gates Plessey PLESSEY CLA2000 CLA21XX CLA2000 SERIES plessey semi-custom