E3A33T4 Search Results

BAS29

Abstract: BAS31 BAS35 diode 7B4
Contextual Info: • E3A33T4 DDDG716 7b4 ■ BAS29, BAS31, BAS35 SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE BAS29 single diode, BAS31 dual diodes in series and BAS35 dual diodes, common anodes. Marking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm B A S 2 9 - L20 BAS31 - L21

BC859

Abstract: BC859A BC859B BC859C BC860 BC860A BC860B BC860C BST 33
Contextual Info: BC859 BC860 SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistors M arking PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm BC859 = 4D BC859A = 4A BC859B = 4B BC859C = 4C BC860 = 4H BC860A = 4E BC860B = 4F BC860C = 4G _3.0_ 2.8 0.48 0.38 0.14 3 2.6 Pin configuration

Contextual Info: 2H 3439,2N 34-10 HIGH VOLTAGE m SILICON TRANSISTORS TO-39 HIGH VOLTAGE SILICON PLANAR TRANSISTORS USED IN HIGH VOLTAGE * HIGH POWER AMPLIFIER APPLICATIONS, DESCRIPTION SYMBOL 2N 3439 2N 3440 UNITS 1 Collector-Emitter Voltage VCEC 350 250 V ft Collector-Base Voltage

9t2 transistor

Abstract: 343J 25CC BU407
Contextual Info: BU407 BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection Output Stages of TVs and CRTs _ PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A 8 C D Z F G H J K L M N MIN MAX 16.51 10.67 4.83 0 .9 0